main
Ray ncep092n10as: specified limits as data (metadata.characteristics, 18 rows from the datasheet) f3684d5 17d ago
{
  "schema_version": 1,
  "type": "component",
  "slug": "ncep092n10as",
  "title": "NCEP092N10AS",
  "brief": "Wuxi NCE Power Semiconductor MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
  "tags": [
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    "transistors-thyristors",
    "ncep092n10as",
    "factory-2.0.0",
    "extractor-text"
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  "component": {
    "mpn": "NCEP092N10AS",
    "manufacturer": "Wuxi NCE Power Semiconductor",
    "package": "SOP-8",
    "pin_count": 8,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
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      "lbr": "ncep092n10as.lbr"
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    "distributor_check": {
      "checked_at": "2026-10-09T22:24:21Z",
      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": null,
        "status": "deferred",
        "error": "shared DigiKey quota guard: 546 calls left today"
      },
      "mouser": {
        "pn": null,
        "status": "no match"
      }
    },
    "pins": [
      {
        "number": "1",
        "name": "S",
        "type": "passive",
        "description": "Source terminal of the N-channel MOSFET, tied with pins 2 and 3; drain-source rated 100V and continuous drain current 14A."
      },
      {
        "number": "2",
        "name": "S",
        "type": "passive",
        "description": "Source terminal of the N-channel MOSFET, tied with pins 1 and 3; drain-source rated 100V and continuous drain current 14A."
      },
      {
        "number": "3",
        "name": "S",
        "type": "passive",
        "description": "Source terminal of the N-channel MOSFET, tied with pins 1 and 2; drain-source rated 100V and continuous drain current 14A."
      },
      {
        "number": "4",
        "name": "G",
        "type": "input",
        "description": "Gate terminal of the N-channel MOSFET; gate-source voltage limit is ±20V with VGS(th) of 1.2V min to 2.2V max."
      },
      {
        "number": "5",
        "name": "D",
        "type": "passive",
        "description": "Drain terminal of the N-channel MOSFET, tied with pins 6, 7 and 8; VDS 100V maximum, pulsed drain current 300A."
      },
      {
        "number": "6",
        "name": "D",
        "type": "passive",
        "description": "Drain terminal of the N-channel MOSFET, tied with pins 5, 7 and 8; VDS 100V maximum, pulsed drain current 300A."
      },
      {
        "number": "7",
        "name": "D",
        "type": "passive",
        "description": "Drain terminal of the N-channel MOSFET, tied with pins 5, 6 and 8; VDS 100V maximum, pulsed drain current 300A."
      },
      {
        "number": "8",
        "name": "D",
        "type": "passive",
        "description": "Drain terminal of the N-channel MOSFET, tied with pins 5, 6 and 7; VDS 100V maximum, pulsed drain current 300A."
      }
    ],
    "provenance": {
      "extractor": "extract_pins 0.3",
      "factory_chain": {
        "factory": "2.0.0",
        "extractor": "extract_pins 0.3",
        "primary_model": "claude-sonnet-5-5",
        "primary_mode": "text+vision",
        "consensus_model": "claude-opus-5-5",
        "consensus": "agreed",
        "guards": "pin_guards 0.1: passed",
        "guard_notes": [
          "extractor flagged: Pin assignment comes from the schematic on page 1 (S = 1,2,3; G = 4; D = 5,6,7,8). The SOP-8 package",
          "vision extraction: provenance cannot be text-verified; needs consensus"
        ],
        "pages_sent": 6,
        "cost_usd": 0.2381,
        "at": "2026-10-09T22:21:57"
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        "pages": 6,
        "sha256": "2e69872e64e84a63",
        "source_tier": "lcsc"
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      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 8,
        "described": 8,
        "cites_pages": true,
        "refuses_to_fabricate": true
      }
    },
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      "footprint": "viewers/footprint.html"
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        "units": "mm",
        "origin": "footprint origin = pad-pattern centre",
        "seat": "z = 0",
        "extents_mm": [
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        "zmin_mm": 0,
        "centre_offset_mm": 0,
        "footprint_binding": "identity",
        "sha256": "07f46cff378d30e6c27dfd5a03092c795323f86d91c71fc7e743f4f418dc553a",
        "checked": "2026-10-09",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
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      {
        "file": "ncep092n10as-etched.step",
        "role": "eda",
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        "checked": "2026-10-09",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
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  },
  "metadata": {
    "specs": {
      "Manufacturer": "Wuxi NCE Power Semiconductor",
      "Package": "SOP-8",
      "Category": "Transistors/Thyristors",
      "Pins": "8"
    },
    "characteristics": {
      "version": 1,
      "source": "datasheet",
      "datasheet_sha256": "2e69872e64e84a63",
      "rows": [
        {
          "name": "Zero Gate Voltage Drain Current",
          "symbol": "IDSS",
          "kind": "electrical",
          "unit": "μA",
          "min": null,
          "typ": null,
          "max": 1,
          "conditions": "VDS=100V,VGS=0V",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Gate-Body Leakage Current",
          "symbol": "IGSS",
          "kind": "electrical",
          "unit": "nA",
          "min": -100,
          "typ": null,
          "max": 100,
          "conditions": "VGS=±20V,VDS=0V",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Drain-Source Breakdown Voltage",
          "symbol": "BVDSS",
          "kind": "electrical",
          "unit": "V",
          "min": 100,
          "typ": null,
          "max": null,
          "conditions": "VGS=0V ID=250μA",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Gate Threshold Voltage",
          "symbol": "VGS(th)",
          "kind": "electrical",
          "unit": "V",
          "min": 1.2,
          "typ": 1.7,
          "max": 2.2,
          "conditions": "VDS=VGS, ID=250μA",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Drain-Source On-State Resistance (VGS=10V)",
          "symbol": "RDS(ON)",
          "kind": "electrical",
          "unit": "mΩ",
          "min": null,
          "typ": 8.4,
          "max": 9.2,
          "conditions": "VGS=10V, ID=14A",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Drain-Source On-State Resistance (VGS=4.5V)",
          "symbol": "RDS(ON)",
          "kind": "electrical",
          "unit": "mΩ",
          "min": null,
          "typ": 10,
          "max": 12,
          "conditions": "VGS=4.5V, ID=14A",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Forward Transconductance",
          "symbol": "gFS",
          "kind": "electrical",
          "unit": "S",
          "min": 60,
          "typ": null,
          "max": null,
          "conditions": "VDS=5V,ID=14A",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Diode Forward Voltage",
          "symbol": "VSD",
          "kind": "electrical",
          "unit": "V",
          "min": null,
          "typ": null,
          "max": 1.2,
          "conditions": "VGS=0V,IS=14A",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Diode Forward Current",
          "symbol": "IS",
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          "unit": "A",
          "min": null,
          "typ": null,
          "max": 14,
          "conditions": "",
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        },
        {
          "name": "Drain-Source Voltage",
          "symbol": "VDS",
          "kind": "absolute_maximum",
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          "min": null,
          "typ": null,
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          "conditions": "",
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        },
        {
          "name": "Gate-Source Voltage",
          "symbol": "VGS",
          "kind": "absolute_maximum",
          "unit": "V",
          "min": -20,
          "typ": null,
          "max": 20,
          "conditions": "",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Drain Current-Continuous",
          "symbol": "ID",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
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          "conditions": "",
          "source_page": 1,
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        },
        {
          "name": "Drain Current-Continuous",
          "symbol": "ID (100℃)",
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          "typ": null,
          "max": 10,
          "conditions": "TC=100℃",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Pulsed Drain Current",
          "symbol": "IDM",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 300,
          "conditions": "",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Maximum Power Dissipation",
          "symbol": "PD",
          "kind": "absolute_maximum",
          "unit": "W",
          "min": null,
          "typ": null,
          "max": 3.5,
          "conditions": "",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Single pulse avalanche energy",
          "symbol": "EAS",
          "kind": "absolute_maximum",
          "unit": "mJ",
          "min": null,
          "typ": null,
          "max": 350,
          "conditions": "Tj=25℃, VDD=50V, VG=10V, L=0.25mH, Rg=25Ω",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Operating Junction and Storage Temperature Range",
          "symbol": "TJ,TSTG",
          "kind": "absolute_maximum",
          "unit": "℃",
          "min": -55,
          "typ": null,
          "max": 150,
          "conditions": "",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Thermal Resistance, Junction-to-Ambient",
          "symbol": "RθJA",
          "kind": "thermal",
          "unit": "℃/W",
          "min": null,
          "typ": 36,
          "max": null,
          "conditions": "",
          "source_page": 1,
          "source": "datasheet"
        }
      ]
    }
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  "discovery_triggers": [
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  "discovery_pitch": "NCEP092N10AS (Wuxi NCE Power Semiconductor) component page: datasheet pinout, KiCad symbol, footprint and 3D.",
  "author": {
    "name": "Ray",
    "email": "[email protected]"
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