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ncep092n10as: specified limits as data (metadata.characteristics, 18 rows from the datasheet)

Ray ·f3684d5738 ·17d ago ·parent deccc39
2 files changed +249−1
README.md+25
@@ -26,6 +26,31 @@ NCEP092N10AS from Wuxi NCE Power Semiconductor, in a SOP-8. Pinout and pin descr | Category | Transistors/Thyristors | | Pins | 8 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=100V,VGS=0V | 2 |+| Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V,VDS=0V | 2 |+| Drain-Source Breakdown Voltage | BVDSS | 100 |  |  | V | VGS=0V ID=250μA | 2 |+| Gate Threshold Voltage | VGS(th) | 1.2 | 1.7 | 2.2 | V | VDS=VGS, ID=250μA | 2 |+| Drain-Source On-State Resistance (VGS=10V) | RDS(ON) |  | 8.4 | 9.2 | mΩ | VGS=10V, ID=14A | 2 |+| Drain-Source On-State Resistance (VGS=4.5V) | RDS(ON) |  | 10 | 12 | mΩ | VGS=4.5V, ID=14A | 2 |+| Forward Transconductance | gFS | 60 |  |  | S | VDS=5V,ID=14A | 2 |+| Diode Forward Voltage | VSD |  |  | 1.2 | V | VGS=0V,IS=14A | 2 |+| Diode Forward Current | IS |  |  | 14 | A |  | 2 |+| Drain-Source Voltage | VDS |  |  | 100 | V |  | 1 |+| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |+| Drain Current-Continuous | ID |  |  | 14 | A |  | 1 |+| Drain Current-Continuous | ID (100℃) |  |  | 10 | A | TC=100℃ | 1 |+| Pulsed Drain Current | IDM |  |  | 300 | A |  | 1 |+| Maximum Power Dissipation | PD |  |  | 3.5 | W |  | 1 |+| Single pulse avalanche energy | EAS |  |  | 350 | mJ | Tj=25℃, VDD=50V, VG=10V, L=0.25mH, Rg=25Ω | 1 |+| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 150 | ℃ |  | 1 |+| Thermal Resistance, Junction-to-Ambient | RθJA |  | 36 |  | ℃/W |  | 1 |+ ## CAD (KiCad official)  - Symbol: `NCEP092N10AS`
page.json+224−1
@@ -179,6 +179,229 @@       "Package": "SOP-8",       "Category": "Transistors/Thyristors",       "Pins": "8"+    },+    "characteristics": {+      "version": 1,+      "source": "datasheet",+      "datasheet_sha256": "2e69872e64e84a63",+      "rows": [+        {+          "name": "Zero Gate Voltage Drain Current",+          "symbol": "IDSS",+          "kind": "electrical",+          "unit": "μA",+          "min": null,+          "typ": null,+          "max": 1,+          "conditions": "VDS=100V,VGS=0V",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Gate-Body Leakage Current",+          "symbol": "IGSS",+          "kind": "electrical",+          "unit": "nA",+          "min": -100,+          "typ": null,+          "max": 100,+          "conditions": "VGS=±20V,VDS=0V",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Drain-Source Breakdown Voltage",+          "symbol": "BVDSS",+          "kind": "electrical",+          "unit": "V",+          "min": 100,+          "typ": null,+          "max": null,+          "conditions": "VGS=0V ID=250μA",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Gate Threshold Voltage",+          "symbol": "VGS(th)",+          "kind": "electrical",+          "unit": "V",+          "min": 1.2,+          "typ": 1.7,+          "max": 2.2,+          "conditions": "VDS=VGS, ID=250μA",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Drain-Source On-State Resistance (VGS=10V)",+          "symbol": "RDS(ON)",+          "kind": "electrical",+          "unit": "mΩ",+          "min": null,+          "typ": 8.4,+          "max": 9.2,+          "conditions": "VGS=10V, ID=14A",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Drain-Source On-State Resistance (VGS=4.5V)",+          "symbol": "RDS(ON)",+          "kind": "electrical",+          "unit": "mΩ",+          "min": null,+          "typ": 10,+          "max": 12,+          "conditions": "VGS=4.5V, ID=14A",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Forward Transconductance",+          "symbol": "gFS",+          "kind": "electrical",+          "unit": "S",+          "min": 60,+          "typ": null,+          "max": null,+          "conditions": "VDS=5V,ID=14A",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Diode Forward Voltage",+          "symbol": "VSD",+          "kind": "electrical",+          "unit": "V",+          "min": null,+          "typ": null,+          "max": 1.2,+          "conditions": "VGS=0V,IS=14A",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Diode Forward Current",+          "symbol": "IS",+          "kind": "electrical",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 14,+          "conditions": "",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Drain-Source Voltage",+          "symbol": "VDS",+          "kind": "absolute_maximum",+          "unit": "V",+          "min": null,+          "typ": null,+          "max": 100,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Gate-Source Voltage",+          "symbol": "VGS",+          "kind": "absolute_maximum",+          "unit": "V",+          "min": -20,+          "typ": null,+          "max": 20,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Drain Current-Continuous",+          "symbol": "ID",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 14,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Drain Current-Continuous",+          "symbol": "ID (100℃)",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 10,+          "conditions": "TC=100℃",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Pulsed Drain Current",+          "symbol": "IDM",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 300,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Maximum Power Dissipation",+          "symbol": "PD",+          "kind": "absolute_maximum",+          "unit": "W",+          "min": null,+          "typ": null,+          "max": 3.5,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Single pulse avalanche energy",+          "symbol": "EAS",+          "kind": "absolute_maximum",+          "unit": "mJ",+          "min": null,+          "typ": null,+          "max": 350,+          "conditions": "Tj=25℃, VDD=50V, VG=10V, L=0.25mH, Rg=25Ω",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Operating Junction and Storage Temperature Range",+          "symbol": "TJ,TSTG",+          "kind": "absolute_maximum",+          "unit": "℃",+          "min": -55,+          "typ": null,+          "max": 150,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Thermal Resistance, Junction-to-Ambient",+          "symbol": "RθJA",+          "kind": "thermal",+          "unit": "℃/W",+          "min": null,+          "typ": 36,+          "max": null,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        }+      ]     }   },   "variants": [],@@ -220,4 +443,4 @@   "visibility": {     "public": true   }-}\ No newline at end of file+}