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NCEP092N10AS

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Wuxi NCE Power Semiconductor MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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docs Publish 0.1.0 · Ray 23d ago
viewers ncep092n10as: viewers · Ray 23d ago
ncep092n10as-etched.glb ncep092n10as: factory component page (tier=lcsc) · Ray 23d ago
ncep092n10as-etched.step ncep092n10as: factory component page (tier=lcsc) · Ray 23d ago
ncep092n10as-hero.glb ncep092n10as: hero GLB from the etched model (keeps the MPN mark) · Ray 23d ago
ncep092n10as-hero.overlay.json Publish 0.1.0 · Ray 23d ago
ncep092n10as.glb Publish 0.1.0 · Ray 23d ago
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ncep092n10as.kicad_sym Publish 0.1.0 · Ray 23d ago
ncep092n10as.lbr Publish 0.1.0 · Ray 23d ago
ncep092n10as.step Publish 0.1.0 · Ray 23d ago
package.json Publish 0.1.0 · Ray 23d ago
page.json ncep092n10as: specified limits as data (metadata.characteristics, 18 rows from the datasheet) · Ray 17d ago
README.md ncep092n10as: specified limits as data (metadata.characteristics, 18 rows from the datasheet) · Ray 17d ago

NCEP092N10AS

Wuxi NCE Power Semiconductor · MOSFETs · SOP-8

NCEP092N10AS from Wuxi NCE Power Semiconductor, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the N-channel MOSFET, tied with pins 2 and 3; drain-source rated 100V and continuous drain current 14A.
2 S passive Source terminal of the N-channel MOSFET, tied with pins 1 and 3; drain-source rated 100V and continuous drain current 14A.
3 S passive Source terminal of the N-channel MOSFET, tied with pins 1 and 2; drain-source rated 100V and continuous drain current 14A.
4 G input Gate terminal of the N-channel MOSFET; gate-source voltage limit is ±20V with VGS(th) of 1.2V min to 2.2V max.
5 D passive Drain terminal of the N-channel MOSFET, tied with pins 6, 7 and 8; VDS 100V maximum, pulsed drain current 300A.
6 D passive Drain terminal of the N-channel MOSFET, tied with pins 5, 7 and 8; VDS 100V maximum, pulsed drain current 300A.
7 D passive Drain terminal of the N-channel MOSFET, tied with pins 5, 6 and 8; VDS 100V maximum, pulsed drain current 300A.
8 D passive Drain terminal of the N-channel MOSFET, tied with pins 5, 6 and 7; VDS 100V maximum, pulsed drain current 300A.

Key specifications

Parameter Value
Manufacturer Wuxi NCE Power Semiconductor
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Zero Gate Voltage Drain Current IDSS 1 μA VDS=100V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Drain-Source Breakdown Voltage BVDSS 100 V VGS=0V ID=250μA 2
Gate Threshold Voltage VGS(th) 1.2 1.7 2.2 V VDS=VGS, ID=250μA 2
Drain-Source On-State Resistance (VGS=10V) RDS(ON) 8.4 9.2 mΩ VGS=10V, ID=14A 2
Drain-Source On-State Resistance (VGS=4.5V) RDS(ON) 10 12 mΩ VGS=4.5V, ID=14A 2
Forward Transconductance gFS 60 S VDS=5V,ID=14A 2
Diode Forward Voltage VSD 1.2 V VGS=0V,IS=14A 2
Diode Forward Current IS 14 A 2
Drain-Source Voltage VDS 100 V 1
Gate-Source Voltage VGS -20 20 V 1
Drain Current-Continuous ID 14 A 1
Drain Current-Continuous ID (100℃) 10 A TC=100℃ 1
Pulsed Drain Current IDM 300 A 1
Maximum Power Dissipation PD 3.5 W 1
Single pulse avalanche energy EAS 350 mJ Tj=25℃, VDD=50V, VG=10V, L=0.25mH, Rg=25Ω 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Ambient RθJA 36 ℃/W 1

CAD (KiCad official)

  • Symbol: NCEP092N10AS
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: ncep092n10as-etched.step / ncep092n10as-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ncep092n10as.step / ncep092n10as.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wuxi NCE Power Semiconductor datasheet (6 pp, sha256 2e69872e64e84a63, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF