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NCEP092N10AS
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Wuxi NCE Power Semiconductor MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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ncep092n10as: specified limits as data (metadata.characteristics, 18 rows from the datasheet)
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NCEP092N10AS
Wuxi NCE Power Semiconductor · MOSFETs · SOP-8
NCEP092N10AS from Wuxi NCE Power Semiconductor, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET, tied with pins 2 and 3; drain-source rated 100V and continuous drain current 14A. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, tied with pins 1 and 3; drain-source rated 100V and continuous drain current 14A. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, tied with pins 1 and 2; drain-source rated 100V and continuous drain current 14A. |
| 4 | G | input | Gate terminal of the N-channel MOSFET; gate-source voltage limit is ±20V with VGS(th) of 1.2V min to 2.2V max. |
| 5 | D | passive | Drain terminal of the N-channel MOSFET, tied with pins 6, 7 and 8; VDS 100V maximum, pulsed drain current 300A. |
| 6 | D | passive | Drain terminal of the N-channel MOSFET, tied with pins 5, 7 and 8; VDS 100V maximum, pulsed drain current 300A. |
| 7 | D | passive | Drain terminal of the N-channel MOSFET, tied with pins 5, 6 and 8; VDS 100V maximum, pulsed drain current 300A. |
| 8 | D | passive | Drain terminal of the N-channel MOSFET, tied with pins 5, 6 and 7; VDS 100V maximum, pulsed drain current 300A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=100V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Drain-Source Breakdown Voltage | BVDSS | 100 | V | VGS=0V ID=250μA | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.7 | 2.2 | V | VDS=VGS, ID=250μA | 2 |
| Drain-Source On-State Resistance (VGS=10V) | RDS(ON) | 8.4 | 9.2 | mΩ | VGS=10V, ID=14A | 2 | |
| Drain-Source On-State Resistance (VGS=4.5V) | RDS(ON) | 10 | 12 | mΩ | VGS=4.5V, ID=14A | 2 | |
| Forward Transconductance | gFS | 60 | S | VDS=5V,ID=14A | 2 | ||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V,IS=14A | 2 | ||
| Diode Forward Current | IS | 14 | A | 2 | |||
| Drain-Source Voltage | VDS | 100 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current-Continuous | ID | 14 | A | 1 | |||
| Drain Current-Continuous | ID (100℃) | 10 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 300 | A | 1 | |||
| Maximum Power Dissipation | PD | 3.5 | W | 1 | |||
| Single pulse avalanche energy | EAS | 350 | mJ | Tj=25℃, VDD=50V, VG=10V, L=0.25mH, Rg=25Ω | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 36 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
NCEP092N10AS - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
ncep092n10as-etched.step/ncep092n10as-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ncep092n10as.step/ncep092n10as.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wuxi NCE Power Semiconductor datasheet (6 pp, sha256
2e69872e64e84a63, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# NCEP092N10AS
**Wuxi NCE Power Semiconductor** · MOSFETs · SOP-8
NCEP092N10AS from Wuxi NCE Power Semiconductor, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET, tied with pins 2 and 3; drain-source rated 100V and continuous drain current 14A. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, tied with pins 1 and 3; drain-source rated 100V and continuous drain current 14A. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, tied with pins 1 and 2; drain-source rated 100V and continuous drain current 14A. |
| 4 | G | input | Gate terminal of the N-channel MOSFET; gate-source voltage limit is ±20V with VGS(th) of 1.2V min to 2.2V max. |
| 5 | D | passive | Drain terminal of the N-channel MOSFET, tied with pins 6, 7 and 8; VDS 100V maximum, pulsed drain current 300A. |
| 6 | D | passive | Drain terminal of the N-channel MOSFET, tied with pins 5, 7 and 8; VDS 100V maximum, pulsed drain current 300A. |
| 7 | D | passive | Drain terminal of the N-channel MOSFET, tied with pins 5, 6 and 8; VDS 100V maximum, pulsed drain current 300A. |
| 8 | D | passive | Drain terminal of the N-channel MOSFET, tied with pins 5, 6 and 7; VDS 100V maximum, pulsed drain current 300A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS=100V,VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V,VDS=0V | 2 |
| Drain-Source Breakdown Voltage | BVDSS | 100 | | | V | VGS=0V ID=250μA | 2 |
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.7 | 2.2 | V | VDS=VGS, ID=250μA | 2 |
| Drain-Source On-State Resistance (VGS=10V) | RDS(ON) | | 8.4 | 9.2 | mΩ | VGS=10V, ID=14A | 2 |
| Drain-Source On-State Resistance (VGS=4.5V) | RDS(ON) | | 10 | 12 | mΩ | VGS=4.5V, ID=14A | 2 |
| Forward Transconductance | gFS | 60 | | | S | VDS=5V,ID=14A | 2 |
| Diode Forward Voltage | VSD | | | 1.2 | V | VGS=0V,IS=14A | 2 |
| Diode Forward Current | IS | | | 14 | A | | 2 |
| Drain-Source Voltage | VDS | | | 100 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Drain Current-Continuous | ID | | | 14 | A | | 1 |
| Drain Current-Continuous | ID (100℃) | | | 10 | A | TC=100℃ | 1 |
| Pulsed Drain Current | IDM | | | 300 | A | | 1 |
| Maximum Power Dissipation | PD | | | 3.5 | W | | 1 |
| Single pulse avalanche energy | EAS | | | 350 | mJ | Tj=25℃, VDD=50V, VG=10V, L=0.25mH, Rg=25Ω | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance, Junction-to-Ambient | RθJA | | 36 | | ℃/W | | 1 |
## CAD (KiCad official)
- Symbol: `NCEP092N10AS`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `ncep092n10as-etched.step` / `ncep092n10as-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ncep092n10as.step` / `ncep092n10as.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Wuxi NCE Power Semiconductor datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590226391607107584) (6 pp, sha256 `2e69872e64e84a63`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ncep092n10as-datasheet.pdf)