NCEP0140AG

{
  "schema_version": 1,
  "type": "component",
  "slug": "ncep0140ag",
  "title": "NCEP0140AG",
  "brief": "Wuxi NCE Power Semiconductor MOSFETs, DFN5X6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
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  "component": {
    "mpn": "NCEP0140AG",
    "manufacturer": "Wuxi NCE Power Semiconductor",
    "package": "DFN5X6-8L",
    "pin_count": 9,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
    "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588912880482074624",
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      "lbr": "ncep0140ag.lbr"
    },
    "distributor_links": {
      "lcsc": "C503009"
    },
    "distributor_check": {
      "checked_at": "2026-10-10T00:51:58Z",
      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": null,
        "status": "no match"
      },
      "mouser": {
        "pn": null,
        "status": "no match"
      }
    },
    "pins": [
      {
        "number": "1",
        "name": "S",
        "type": "passive",
        "description": "Source terminal of the N-channel MOSFET, one of three source pins (S S S G along the bottom edge of the top view)."
      },
      {
        "number": "2",
        "name": "S",
        "type": "passive",
        "description": "Source terminal of the N-channel MOSFET, tied to the same source as pins 1 and 3."
      },
      {
        "number": "3",
        "name": "S",
        "type": "passive",
        "description": "Source terminal of the N-channel MOSFET, tied to the same source as pins 1 and 2."
      },
      {
        "number": "4",
        "name": "G",
        "type": "input",
        "description": "Gate terminal, with VGS rated at ±20 V maximum and a threshold of 1.2 V min to 2.8 V max at 250 µA."
      },
      {
        "number": "5",
        "name": "D",
        "type": "passive",
        "description": "Drain terminal, one of four drain pins along the top edge of the top view, connected to the drain exposed pad; VDS 100 V maximum."
      },
      {
        "number": "6",
        "name": "D",
        "type": "passive",
        "description": "Drain terminal, tied to the same drain as pins 5, 7 and 8; VDS 100 V maximum."
      },
      {
        "number": "7",
        "name": "D",
        "type": "passive",
        "description": "Drain terminal, tied to the same drain as pins 5, 6 and 8; VDS 100 V maximum."
      },
      {
        "number": "8",
        "name": "D",
        "type": "passive",
        "description": "Drain terminal, tied to the same drain as pins 5 to 7; continuous ID 40 A (silicon limited)."
      },
      {
        "number": "9",
        "name": "EP",
        "type": "passive",
        "description": "Exposed pad (from the footprint; not named in the datasheet pin table)."
      }
    ],
    "provenance": {
      "extractor": "extract_pins 0.3",
      "factory_chain": {
        "factory": "2.0.0",
        "extractor": "extract_pins 0.3",
        "primary_model": "claude-sonnet-5-5",
        "primary_mode": "text+vision",
        "consensus_model": "claude-opus-5-5",
        "consensus": "agreed",
        "guards": "pin_guards 0.1: passed",
        "guard_notes": [
          "extractor flagged: The package views label the pins S S S G on one edge and D D D D on the opposite edge, but they prin; The bottom view shows a large exposed pad joined to the drain pins. The datasheet gives it no pin nu; Pin types use 'passive' for the MOSFET source and drain terminals. Change this if your convention di",
          "exposed pad 9 added from the footprint",
          "vision extraction: provenance cannot be text-verified; needs consensus"
        ],
        "pages_sent": 6,
        "cost_usd": 0.1527,
        "at": "2026-10-10T00:49:50"
      },
      "datasheet": {
        "url": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588912880482074624",
        "pages": 6,
        "sha256": "35b0d95339b09331",
        "source_tier": "lcsc"
      },
      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 9,
        "described": 9,
        "cites_pages": true,
        "refuses_to_fabricate": true
      }
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          4.98,
          0.92
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        "zmin_mm": 0,
        "centre_offset_mm": 0,
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        "sha256": "13e5a2a05f78c2a0952534b2fb187d0be154d366a431374e398c7e2032779f1b",
        "checked": "2026-10-10",
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  },
  "metadata": {
    "specs": {
      "Manufacturer": "Wuxi NCE Power Semiconductor",
      "Package": "DFN5X6-8L",
      "Category": "Transistors/Thyristors",
      "Pins": "9"
    },
    "characteristics": {
      "version": 1,
      "source": "datasheet",
      "datasheet_sha256": "35b0d95339b09331",
      "rows": [
        {
          "name": "Drain-Source Voltage",
          "symbol": "VDS",
          "kind": "absolute_maximum",
          "unit": "V",
          "min": null,
          "typ": null,
          "max": 100,
          "conditions": "TC=25℃",
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          "source": "datasheet"
        },
        {
          "name": "Gate-Source Voltage",
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          "unit": "V",
          "min": -20,
          "typ": null,
          "max": 20,
          "conditions": "TC=25℃",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Drain Current-Continuous (Silicon Limited)",
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          "min": null,
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          "max": 40,
          "conditions": "TC=25℃",
          "source_page": 1,
          "source": "datasheet"
        },
        {
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          "conditions": "TC=100℃",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Pulsed Drain Current (Package Limited)",
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          "min": null,
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          "max": 160,
          "conditions": "Package Limited",
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        },
        {
          "name": "Maximum Power Dissipation",
          "symbol": "PD",
          "kind": "absolute_maximum",
          "unit": "W",
          "min": null,
          "typ": null,
          "max": 50,
          "conditions": "TC=25℃",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Single pulse avalanche energy",
          "symbol": "EAS",
          "kind": "absolute_maximum",
          "unit": "mJ",
          "min": null,
          "typ": null,
          "max": 200,
          "conditions": "Note 5: Tj=25℃, VDD=20V, VG=10V, L=0.5mH, Rg=25Ω",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Operating Junction and Storage Temperature Range",
          "symbol": "TJ,TSTG",
          "kind": "absolute_maximum",
          "unit": "℃",
          "min": -55,
          "typ": null,
          "max": 150,
          "conditions": "",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Thermal Resistance, Junction-to-Case (Note 2)",
          "symbol": "RθJC",
          "kind": "thermal",
          "unit": "℃/W",
          "min": null,
          "typ": null,
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          "conditions": "",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Drain-Source Breakdown Voltage",
          "symbol": "BVDSS",
          "kind": "electrical",
          "unit": "V",
          "min": 100,
          "typ": null,
          "max": null,
          "conditions": "VGS=0V, ID=250μA",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Zero Gate Voltage Drain Current",
          "symbol": "IDSS",
          "kind": "electrical",
          "unit": "μA",
          "min": null,
          "typ": null,
          "max": 1,
          "conditions": "VDS=100V, VGS=0V",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Gate-Body Leakage Current",
          "symbol": "IGSS",
          "kind": "electrical",
          "unit": "nA",
          "min": -100,
          "typ": null,
          "max": 100,
          "conditions": "VGS=±20V, VDS=0V",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Gate Threshold Voltage",
          "symbol": "VGS(th)",
          "kind": "electrical",
          "unit": "V",
          "min": 1.2,
          "typ": 2,
          "max": 2.8,
          "conditions": "VDS=VGS, ID=250μA",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Drain-Source On-State Resistance",
          "symbol": "RDS(ON)",
          "kind": "electrical",
          "unit": "mΩ",
          "min": null,
          "typ": 18,
          "max": 23,
          "conditions": "VGS=10V, ID=20A",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Drain-Source On-State Resistance",
          "symbol": "RDS(ON)",
          "kind": "electrical",
          "unit": "mΩ",
          "min": null,
          "typ": 22,
          "max": 27,
          "conditions": "VGS=4.5V, ID=20A",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Diode Forward Current (Note 2)",
          "symbol": "IS",
          "kind": "electrical",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 40,
          "conditions": "",
          "source_page": 2,
          "source": "datasheet"
        }
      ]
    }
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  "discovery_pitch": "NCEP0140AG (Wuxi NCE Power Semiconductor) component page: datasheet pinout, KiCad symbol, footprint and 3D.",
  "author": {
    "name": "Ray",
    "email": "[email protected]"
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