component
NCEP0140AG
Public Made by Adomby adom
Wuxi NCE Power Semiconductor MOSFETs, DFN5X6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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ncep0140ag: specified limits as data (metadata.characteristics, 16 rows from the datasheet)
2 files changed
+223−1
README.md+23@@ -27,6 +27,29 @@ NCEP0140AG from Wuxi NCE Power Semiconductor, in a DFN5X6-8L. Pinout and pin des | Category | Transistors/Thyristors | | Pins | 9 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage | VDS | | | 100 | V | TC=25℃ | 1 |+| Gate-Source Voltage | VGS | -20 | | 20 | V | TC=25℃ | 1 |+| Drain Current-Continuous (Silicon Limited) | ID | | | 40 | A | TC=25℃ | 1 |+| Drain Current-Continuous | ID(100℃) | | | 28.3 | A | TC=100℃ | 1 |+| Pulsed Drain Current (Package Limited) | IDM | | | 160 | A | Package Limited | 1 |+| Maximum Power Dissipation | PD | | | 50 | W | TC=25℃ | 1 |+| Single pulse avalanche energy | EAS | | | 200 | mJ | Note 5: Tj=25℃, VDD=20V, VG=10V, L=0.5mH, Rg=25Ω | 1 |+| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | | 150 | ℃ | | 1 |+| Thermal Resistance, Junction-to-Case (Note 2) | RθJC | | | 2.5 | ℃/W | | 2 |+| Drain-Source Breakdown Voltage | BVDSS | 100 | | | V | VGS=0V, ID=250μA | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS=100V, VGS=0V | 2 |+| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 2 |+| Gate Threshold Voltage | VGS(th) | 1.2 | 2 | 2.8 | V | VDS=VGS, ID=250μA | 2 |+| Drain-Source On-State Resistance | RDS(ON) | | 18 | 23 | mΩ | VGS=10V, ID=20A | 2 |+| Drain-Source On-State Resistance | RDS(ON) | | 22 | 27 | mΩ | VGS=4.5V, ID=20A | 2 |+| Diode Forward Current (Note 2) | IS | | | 40 | A | | 2 |+ ## CAD (KiCad official) - Symbol: `NCEP0140AG`
page.json+200−1@@ -185,6 +185,205 @@ "Package": "DFN5X6-8L", "Category": "Transistors/Thyristors", "Pins": "9"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "35b0d95339b09331",+ "rows": [+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "TC=25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "TC=25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain Current-Continuous (Silicon Limited)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 40,+ "conditions": "TC=25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain Current-Continuous",+ "symbol": "ID(100℃)",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 28.3,+ "conditions": "TC=100℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current (Package Limited)",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 160,+ "conditions": "Package Limited",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "TC=25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Single pulse avalanche energy",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 200,+ "conditions": "Note 5: Tj=25℃, VDD=20V, VG=10V, L=0.5mH, Rg=25Ω",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction and Storage Temperature Range",+ "symbol": "TJ,TSTG",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction-to-Case (Note 2)",+ "symbol": "RθJC",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": null,+ "max": 2.5,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": 100,+ "typ": null,+ "max": null,+ "conditions": "VGS=0V, ID=250μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS=100V, VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Body Leakage Current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VGS=±20V, VDS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 1.2,+ "typ": 2,+ "max": 2.8,+ "conditions": "VDS=VGS, ID=250μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 18,+ "max": 23,+ "conditions": "VGS=10V, ID=20A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 22,+ "max": 27,+ "conditions": "VGS=4.5V, ID=20A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Current (Note 2)",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 40,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -226,4 +425,4 @@ "visibility": { "public": true }-}+}