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NCEP0140AG

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Wuxi NCE Power Semiconductor MOSFETs, DFN5X6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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docs Publish 0.1.0 · Ray 29d ago
viewers ncep0140ag: viewers · Ray 29d ago
ncep0140ag-etched.glb ncep0140ag: factory component page (tier=lcsc) · Ray 29d ago
ncep0140ag-etched.step ncep0140ag: factory component page (tier=lcsc) · Ray 29d ago
ncep0140ag-hero.glb ncep0140ag: hero GLB from the etched model (keeps the MPN mark) · Ray 29d ago
ncep0140ag-hero.overlay.json Publish 0.1.0 · Ray 29d ago
ncep0140ag.glb Publish 0.1.0 · Ray 29d ago
ncep0140ag.kicad_mod Publish 0.1.0 · Ray 29d ago
ncep0140ag.kicad_sym Publish 0.1.0 · Ray 29d ago
ncep0140ag.lbr Publish 0.1.0 · Ray 29d ago
ncep0140ag.step Publish 0.1.0 · Ray 29d ago
package.json Publish 0.1.0 · Ray 29d ago
page.json ncep0140ag: specified limits as data (metadata.characteristics, 16 rows from the datasheet) · Ray 23d ago
README.md ncep0140ag: specified limits as data (metadata.characteristics, 16 rows from the datasheet) · Ray 23d ago

NCEP0140AG

Wuxi NCE Power Semiconductor · MOSFETs · DFN5X6-8L

NCEP0140AG from Wuxi NCE Power Semiconductor, in a DFN5X6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the N-channel MOSFET, one of three source pins (S S S G along the bottom edge of the top view).
2 S passive Source terminal of the N-channel MOSFET, tied to the same source as pins 1 and 3.
3 S passive Source terminal of the N-channel MOSFET, tied to the same source as pins 1 and 2.
4 G input Gate terminal, with VGS rated at ±20 V maximum and a threshold of 1.2 V min to 2.8 V max at 250 µA.
5 D passive Drain terminal, one of four drain pins along the top edge of the top view, connected to the drain exposed pad; VDS 100 V maximum.
6 D passive Drain terminal, tied to the same drain as pins 5, 7 and 8; VDS 100 V maximum.
7 D passive Drain terminal, tied to the same drain as pins 5, 6 and 8; VDS 100 V maximum.
8 D passive Drain terminal, tied to the same drain as pins 5 to 7; continuous ID 40 A (silicon limited).
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Wuxi NCE Power Semiconductor
Package DFN5X6-8L
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V TC=25℃ 1
Gate-Source Voltage VGS -20 20 V TC=25℃ 1
Drain Current-Continuous (Silicon Limited) ID 40 A TC=25℃ 1
Drain Current-Continuous ID(100℃) 28.3 A TC=100℃ 1
Pulsed Drain Current (Package Limited) IDM 160 A Package Limited 1
Maximum Power Dissipation PD 50 W TC=25℃ 1
Single pulse avalanche energy EAS 200 mJ Note 5: Tj=25℃, VDD=20V, VG=10V, L=0.5mH, Rg=25Ω 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Case (Note 2) RθJC 2.5 ℃/W 2
Drain-Source Breakdown Voltage BVDSS 100 V VGS=0V, ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=100V, VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Gate Threshold Voltage VGS(th) 1.2 2 2.8 V VDS=VGS, ID=250μA 2
Drain-Source On-State Resistance RDS(ON) 18 23 mΩ VGS=10V, ID=20A 2
Drain-Source On-State Resistance RDS(ON) 22 27 mΩ VGS=4.5V, ID=20A 2
Diode Forward Current (Note 2) IS 40 A 2

CAD (KiCad official)

  • Symbol: NCEP0140AG
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN5X6-8L (KiCad packages3D, STEP)
  • 3D model files: ncep0140ag-etched.step / ncep0140ag-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ncep0140ag.step / ncep0140ag.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wuxi NCE Power Semiconductor datasheet (6 pp, sha256 35b0d95339b09331, retrieved 2026-10-10, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF