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Ray nce40p05y: specified limits as data (metadata.characteristics, 15 rows from the datasheet) 4477c80 16d ago

NCE40P05Y

Wuxi NCE Power Semiconductor · MOSFETs · SOT-23-3L

NCE40P05Y from Wuxi NCE Power Semiconductor, in a SOT-23-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V, with threshold VGS(th) of -1.0 V to -3.0 V at ID=-250μA.
2 S passive Source of the P-channel MOSFET; body diode forward current IS is limited to -3.3 A.
3 D passive Drain; drain-source voltage rated -40 V, continuous drain current -5.3 A, pulsed -18 A.

Key specifications

Parameter Value
Manufacturer Wuxi NCE Power Semiconductor
Package SOT-23-3L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -40 V 1
Gate-Source Voltage VGS -20 20 V 1
Drain Current-Continuous ID -5.3 A 1
Drain Current-Continuous (TC=100℃) ID(100℃) -3.7 A TC=100℃ 1
Pulsed Drain Current IDM -18 A Note 1 1
Maximum Power Dissipation PD 2 W 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Ambient RθJA 62.5 ℃/W Note 2 1
Drain-Source Breakdown Voltage BVDSS -40 V VGS=0V ID=-250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=-40V, VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Gate Threshold Voltage VGS(th) -1 -1.9 -3 V VDS=VGS, ID=-250μA 2
Drain-Source On-State Resistance RDS(ON) 73 85 mΩ VGS=-10V, ID=-5A 2
Diode Forward Voltage VSD 1.2 V VGS=0V, IS=-3.3A 2
Diode Forward Current IS -3.3 A Note 2 2

CAD (KiCad official)

  • Symbol: NCE40P05Y
  • Footprint: Package_TO_SOT_SMD:SOT-23-3
  • 3D model: SOT-23-3L (KiCad packages3D, STEP)
  • 3D model files: nce40p05y-etched.step / nce40p05y-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nce40p05y.step / nce40p05y.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256 6cc604ba074d51b8, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF