component
NCE40P05Y
Public Made by Adomby adom
Wuxi NCE Power Semiconductor MOSFETs, SOT-23-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 22d ago |
| viewers | 22d ago |
| nce40p05y-etched.glb | 22d ago |
| nce40p05y-etched.step | 22d ago |
| nce40p05y-hero.glb | 22d ago |
| nce40p05y-hero.overlay.json | 22d ago |
| nce40p05y.glb | 22d ago |
| nce40p05y.kicad_mod | 22d ago |
| nce40p05y.kicad_sym | 22d ago |
| nce40p05y.lbr | 22d ago |
| nce40p05y.step | 22d ago |
| package.json | 22d ago |
| page.json | 16d ago |
| README.md | 16d ago |
NCE40P05Y
Wuxi NCE Power Semiconductor · MOSFETs · SOT-23-3L
NCE40P05Y from Wuxi NCE Power Semiconductor, in a SOT-23-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V, with threshold VGS(th) of -1.0 V to -3.0 V at ID=-250μA. |
| 2 | S | passive | Source of the P-channel MOSFET; body diode forward current IS is limited to -3.3 A. |
| 3 | D | passive | Drain; drain-source voltage rated -40 V, continuous drain current -5.3 A, pulsed -18 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | SOT-23-3L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -40 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current-Continuous | ID | -5.3 | A | 1 | |||
| Drain Current-Continuous (TC=100℃) | ID(100℃) | -3.7 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | -18 | A | Note 1 | 1 | ||
| Maximum Power Dissipation | PD | 2 | W | 1 | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 62.5 | ℃/W | Note 2 | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | -40 | V | VGS=0V ID=-250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=-40V, VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | -1 | -1.9 | -3 | V | VDS=VGS, ID=-250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 73 | 85 | mΩ | VGS=-10V, ID=-5A | 2 | |
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=-3.3A | 2 | ||
| Diode Forward Current | IS | -3.3 | A | Note 2 | 2 |
CAD (KiCad official)
- Symbol:
NCE40P05Y - Footprint:
Package_TO_SOT_SMD:SOT-23-3 - 3D model: SOT-23-3L (KiCad packages3D, STEP)
- 3D model files:
nce40p05y-etched.step/nce40p05y-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nce40p05y.step/nce40p05y.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256
6cc604ba074d51b8, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).