component
NCE40P05Y
Public Made by Adomby adom
Wuxi NCE Power Semiconductor MOSFETs, SOT-23-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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nce40p05y: specified limits as data (metadata.characteristics, 15 rows from the datasheet)
2 files changed
+210−1
README.md+22@@ -21,6 +21,28 @@ NCE40P05Y from Wuxi NCE Power Semiconductor, in a SOT-23-3L. Pinout and pin desc | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage | VDS | | | -40 | V | | 1 |+| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |+| Drain Current-Continuous | ID | | | -5.3 | A | | 1 |+| Drain Current-Continuous (TC=100℃) | ID(100℃) | | | -3.7 | A | TC=100℃ | 1 |+| Pulsed Drain Current | IDM | | | -18 | A | Note 1 | 1 |+| Maximum Power Dissipation | PD | | | 2 | W | | 1 |+| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | | 150 | ℃ | | 1 |+| Thermal Resistance, Junction-to-Ambient | RθJA | | | 62.5 | ℃/W | Note 2 | 1 |+| Drain-Source Breakdown Voltage | BVDSS | -40 | | | V | VGS=0V ID=-250μA | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS=-40V, VGS=0V | 2 |+| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 2 |+| Gate Threshold Voltage | VGS(th) | -1 | -1.9 | -3 | V | VDS=VGS, ID=-250μA | 2 |+| Drain-Source On-State Resistance | RDS(ON) | | 73 | 85 | mΩ | VGS=-10V, ID=-5A | 2 |+| Diode Forward Voltage | VSD | | | 1.2 | V | VGS=0V, IS=-3.3A | 2 |+| Diode Forward Current | IS | | | -3.3 | A | Note 2 | 2 |+ ## CAD (KiCad official) - Symbol: `NCE40P05Y`
page.json+188−1@@ -147,6 +147,193 @@ "Package": "SOT-23-3L", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "6cc604ba074d51b8",+ "rows": [+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": -40,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain Current-Continuous",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -5.3,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain Current-Continuous (TC=100℃)",+ "symbol": "ID(100℃)",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -3.7,+ "conditions": "TC=100℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -18,+ "conditions": "Note 1",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 2,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction and Storage Temperature Range",+ "symbol": "TJ,TSTG",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction-to-Ambient",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": null,+ "max": 62.5,+ "conditions": "Note 2",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": -40,+ "typ": null,+ "max": null,+ "conditions": "VGS=0V ID=-250μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS=-40V, VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Body Leakage Current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VGS=±20V, VDS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": -1,+ "typ": -1.9,+ "max": -3,+ "conditions": "VDS=VGS, ID=-250μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 73,+ "max": 85,+ "conditions": "VGS=-10V, ID=-5A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1.2,+ "conditions": "VGS=0V, IS=-3.3A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Current",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -3.3,+ "conditions": "Note 2",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -188,4 +375,4 @@ "visibility": { "public": true }-}+}