# NCE40ND0812S

**Wuxi NCE Power Semiconductor** · MOSFETs · SOP-8

NCE40ND0812S from Wuxi NCE Power Semiconductor, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of N1-channel MOSFET (VDS 40V, ID 8A at TC=25℃). |
| 2 | G1 | input | Gate of N1-channel MOSFET, rated ±20V VGS maximum. |
| 3 | S2 | passive | Source of N2-channel MOSFET (VDS 40V, ID 12A at TC=25℃). |
| 4 | G2 | input | Gate of N2-channel MOSFET, rated ±20V VGS maximum. |
| 5 | D2 | passive | Drain of N2-channel MOSFET, rated 40V VDS maximum. |
| 6 | D2 | passive | Drain of N2-channel MOSFET, rated 40V VDS maximum, shorted to pin 5 externally. |
| 7 | D1 | passive | Drain of N1-channel MOSFET, rated 40V VDS maximum. |
| 8 | D1 | passive | Drain of N1-channel MOSFET, rated 40V VDS maximum, shorted to pin 7 externally. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N1-Channel) | VDS |  |  | 40 | V |  | 1 |
| Drain-Source Voltage (N2-Channel) | VDS |  |  | 40 | V |  | 1 |
| Gate-Source Voltage (N1-Channel) | VGS | -20 |  | 20 | V |  | 1 |
| Gate-Source Voltage (N2-Channel) | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current (N1-Channel) | ID |  |  | 8 | A | TC=25℃ | 1 |
| Continuous Drain Current (N2-Channel) | ID |  |  | 12 | A | TC=25℃ | 1 |
| Continuous Drain Current (N1-Channel) | ID |  |  | 5.7 | A | TC=100℃ | 1 |
| Continuous Drain Current (N2-Channel) | ID |  |  | 8.5 | A | TC=100℃ | 1 |
| Pulsed Drain Current (N1-Channel) | IDM |  |  | 32 | A | Note 1 | 1 |
| Pulsed Drain Current (N2-Channel) | IDM |  |  | 60 | A | Note 1 | 1 |
| Maximum Power Dissipation (N1-Channel) | PD |  |  | 2 | W | TC=25℃ | 1 |
| Maximum Power Dissipation (N2-Channel) | PD |  |  | 2.5 | W | TC=25℃ | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance, Junction-to-Ambient (N1-Channel) | RθJA |  | 62.5 | 85 | ℃/W | Note 2 | 1 |
| Thermal Resistance, Junction-to-Ambient (N2-Channel) | RθJA |  | 50 | 75 | ℃/W | Note 2 | 1 |
| Drain-Source Breakdown Voltage (N1-Channel) | BVDSS | 40 |  |  | V | VGS=0V ID=250μA | 2 |
| Zero Gate Voltage Drain Current (N1-Channel) | IDSS |  |  | 1 | μA | VDS=40V,VGS=0V | 2 |
| Gate-Body Leakage Current (N1-Channel) | IGSS | -100 |  | 100 | nA | VGS=±20V,VDS=0V | 2 |
| Gate Threshold Voltage (N1-Channel) | VGS(th) | 1 | 1.5 | 2 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance (N1-Channel) | RDS(ON) |  | 15.8 | 18 | mΩ | VGS=10V, ID=8A | 2 |
| Drain-Source On-State Resistance (N1-Channel) | RDS(ON) |  | 22 | 28 | mΩ | VGS=4.5V, ID=4A | 2 |
| Forward Transconductance (N1-Channel) | gFS | 33 |  |  | S | VDS=5V,ID=8A | 2 |
| Diode Forward Voltage (N1-Channel) | VSD |  | 0.8 | 1.2 | V | VGS=0V,IS=8A | 2 |
| Drain-Source Breakdown Voltage (N2-Channel) | BVDSS | 40 | 45 |  | V | VGS=0V ID=250μA | 7 |
| Zero Gate Voltage Drain Current (N2-Channel) | IDSS |  |  | 1 | μA | VDS=40V,VGS=0V | 7 |
| Gate-Body Leakage Current (N2-Channel) | IGSS | -100 |  | 100 | nA | VGS=±20V,VDS=0V | 7 |
| Gate Threshold Voltage (N2-Channel) | VGS(th) | 1.2 | 1.6 | 2.5 | V | VDS=VGS,ID=250μA | 7 |
| Drain-Source On-State Resistance (N2-Channel) | RDS(ON) |  | 11.7 | 14 | mΩ | VGS=10V, ID=10A | 7 |
| Drain-Source On-State Resistance (N2-Channel) | RDS(ON) |  | 15.6 | 20 | mΩ | VGS=4.5V, ID=8A | 7 |
| Forward Transconductance (N2-Channel) | gFS | 75 |  |  | S | VDS=5V,ID=10A | 7 |
| Diode Forward Voltage (N2-Channel) | VSD |  |  | 1.2 | V | VGS=0V,IS=10A | 7 |
| Diode Forward Current (N2-Channel) | IS |  |  | 12 | A |  | 7 |

## CAD (KiCad official)

- Symbol: `NCE40ND0812S`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `nce40nd0812s-etched.step` / `nce40nd0812s-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `nce40nd0812s.step` / `nce40nd0812s.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Wuxi NCE Power Semiconductor datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588912763192152064) (11 pp, sha256 `8b08e5e68c468551`, retrieved 2026-10-10, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/nce40nd0812s-datasheet.pdf)