component
NCE40ND0812S
Public Made by Adomby adom
Wuxi NCE Power Semiconductor MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 21d ago |
| viewers | 21d ago |
| nce40nd0812s-etched.glb | 21d ago |
| nce40nd0812s-etched.step | 21d ago |
| nce40nd0812s-hero.glb | 21d ago |
| nce40nd0812s-hero.overlay.json | 21d ago |
| nce40nd0812s.glb | 21d ago |
| nce40nd0812s.kicad_mod | 21d ago |
| nce40nd0812s.kicad_sym | 21d ago |
| nce40nd0812s.lbr | 21d ago |
| nce40nd0812s.step | 21d ago |
| package.json | 21d ago |
| page.json | 16d ago |
| README.md | 16d ago |
NCE40ND0812S
Wuxi NCE Power Semiconductor · MOSFETs · SOP-8
NCE40ND0812S from Wuxi NCE Power Semiconductor, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of N1-channel MOSFET (VDS 40V, ID 8A at TC=25℃). |
| 2 | G1 | input | Gate of N1-channel MOSFET, rated ±20V VGS maximum. |
| 3 | S2 | passive | Source of N2-channel MOSFET (VDS 40V, ID 12A at TC=25℃). |
| 4 | G2 | input | Gate of N2-channel MOSFET, rated ±20V VGS maximum. |
| 5 | D2 | passive | Drain of N2-channel MOSFET, rated 40V VDS maximum. |
| 6 | D2 | passive | Drain of N2-channel MOSFET, rated 40V VDS maximum, shorted to pin 5 externally. |
| 7 | D1 | passive | Drain of N1-channel MOSFET, rated 40V VDS maximum. |
| 8 | D1 | passive | Drain of N1-channel MOSFET, rated 40V VDS maximum, shorted to pin 7 externally. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N1-Channel) | VDS | 40 | V | 1 | |||
| Drain-Source Voltage (N2-Channel) | VDS | 40 | V | 1 | |||
| Gate-Source Voltage (N1-Channel) | VGS | -20 | 20 | V | 1 | ||
| Gate-Source Voltage (N2-Channel) | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current (N1-Channel) | ID | 8 | A | TC=25℃ | 1 | ||
| Continuous Drain Current (N2-Channel) | ID | 12 | A | TC=25℃ | 1 | ||
| Continuous Drain Current (N1-Channel) | ID | 5.7 | A | TC=100℃ | 1 | ||
| Continuous Drain Current (N2-Channel) | ID | 8.5 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current (N1-Channel) | IDM | 32 | A | Note 1 | 1 | ||
| Pulsed Drain Current (N2-Channel) | IDM | 60 | A | Note 1 | 1 | ||
| Maximum Power Dissipation (N1-Channel) | PD | 2 | W | TC=25℃ | 1 | ||
| Maximum Power Dissipation (N2-Channel) | PD | 2.5 | W | TC=25℃ | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Ambient (N1-Channel) | RθJA | 62.5 | 85 | ℃/W | Note 2 | 1 | |
| Thermal Resistance, Junction-to-Ambient (N2-Channel) | RθJA | 50 | 75 | ℃/W | Note 2 | 1 | |
| Drain-Source Breakdown Voltage (N1-Channel) | BVDSS | 40 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current (N1-Channel) | IDSS | 1 | μA | VDS=40V,VGS=0V | 2 | ||
| Gate-Body Leakage Current (N1-Channel) | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage (N1-Channel) | VGS(th) | 1 | 1.5 | 2 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance (N1-Channel) | RDS(ON) | 15.8 | 18 | mΩ | VGS=10V, ID=8A | 2 | |
| Drain-Source On-State Resistance (N1-Channel) | RDS(ON) | 22 | 28 | mΩ | VGS=4.5V, ID=4A | 2 | |
| Forward Transconductance (N1-Channel) | gFS | 33 | S | VDS=5V,ID=8A | 2 | ||
| Diode Forward Voltage (N1-Channel) | VSD | 0.8 | 1.2 | V | VGS=0V,IS=8A | 2 | |
| Drain-Source Breakdown Voltage (N2-Channel) | BVDSS | 40 | 45 | V | VGS=0V ID=250μA | 7 | |
| Zero Gate Voltage Drain Current (N2-Channel) | IDSS | 1 | μA | VDS=40V,VGS=0V | 7 | ||
| Gate-Body Leakage Current (N2-Channel) | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 7 | |
| Gate Threshold Voltage (N2-Channel) | VGS(th) | 1.2 | 1.6 | 2.5 | V | VDS=VGS,ID=250μA | 7 |
| Drain-Source On-State Resistance (N2-Channel) | RDS(ON) | 11.7 | 14 | mΩ | VGS=10V, ID=10A | 7 | |
| Drain-Source On-State Resistance (N2-Channel) | RDS(ON) | 15.6 | 20 | mΩ | VGS=4.5V, ID=8A | 7 | |
| Forward Transconductance (N2-Channel) | gFS | 75 | S | VDS=5V,ID=10A | 7 | ||
| Diode Forward Voltage (N2-Channel) | VSD | 1.2 | V | VGS=0V,IS=10A | 7 | ||
| Diode Forward Current (N2-Channel) | IS | 12 | A | 7 |
CAD (KiCad official)
- Symbol:
NCE40ND0812S - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
nce40nd0812s-etched.step/nce40nd0812s-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nce40nd0812s.step/nce40nd0812s.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wuxi NCE Power Semiconductor datasheet (11 pp, sha256
8b08e5e68c468551, retrieved 2026-10-10, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).