component
NCE40ND0812S
Public Made by Adomby adom
Wuxi NCE Power Semiconductor MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
← Commit history
nce40nd0812s: specified limits as data (metadata.characteristics, 32 rows from the datasheet)
2 files changed
+431−1
README.md+39@@ -26,6 +26,45 @@ NCE40ND0812S from Wuxi NCE Power Semiconductor, in a SOP-8. Pinout and pin descr | Category | Transistors/Thyristors | | Pins | 8 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage (N1-Channel) | VDS | | | 40 | V | | 1 |+| Drain-Source Voltage (N2-Channel) | VDS | | | 40 | V | | 1 |+| Gate-Source Voltage (N1-Channel) | VGS | -20 | | 20 | V | | 1 |+| Gate-Source Voltage (N2-Channel) | VGS | -20 | | 20 | V | | 1 |+| Continuous Drain Current (N1-Channel) | ID | | | 8 | A | TC=25℃ | 1 |+| Continuous Drain Current (N2-Channel) | ID | | | 12 | A | TC=25℃ | 1 |+| Continuous Drain Current (N1-Channel) | ID | | | 5.7 | A | TC=100℃ | 1 |+| Continuous Drain Current (N2-Channel) | ID | | | 8.5 | A | TC=100℃ | 1 |+| Pulsed Drain Current (N1-Channel) | IDM | | | 32 | A | Note 1 | 1 |+| Pulsed Drain Current (N2-Channel) | IDM | | | 60 | A | Note 1 | 1 |+| Maximum Power Dissipation (N1-Channel) | PD | | | 2 | W | TC=25℃ | 1 |+| Maximum Power Dissipation (N2-Channel) | PD | | | 2.5 | W | TC=25℃ | 1 |+| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | | 150 | ℃ | | 1 |+| Thermal Resistance, Junction-to-Ambient (N1-Channel) | RθJA | | 62.5 | 85 | ℃/W | Note 2 | 1 |+| Thermal Resistance, Junction-to-Ambient (N2-Channel) | RθJA | | 50 | 75 | ℃/W | Note 2 | 1 |+| Drain-Source Breakdown Voltage (N1-Channel) | BVDSS | 40 | | | V | VGS=0V ID=250μA | 2 |+| Zero Gate Voltage Drain Current (N1-Channel) | IDSS | | | 1 | μA | VDS=40V,VGS=0V | 2 |+| Gate-Body Leakage Current (N1-Channel) | IGSS | -100 | | 100 | nA | VGS=±20V,VDS=0V | 2 |+| Gate Threshold Voltage (N1-Channel) | VGS(th) | 1 | 1.5 | 2 | V | VDS=VGS,ID=250μA | 2 |+| Drain-Source On-State Resistance (N1-Channel) | RDS(ON) | | 15.8 | 18 | mΩ | VGS=10V, ID=8A | 2 |+| Drain-Source On-State Resistance (N1-Channel) | RDS(ON) | | 22 | 28 | mΩ | VGS=4.5V, ID=4A | 2 |+| Forward Transconductance (N1-Channel) | gFS | 33 | | | S | VDS=5V,ID=8A | 2 |+| Diode Forward Voltage (N1-Channel) | VSD | | 0.8 | 1.2 | V | VGS=0V,IS=8A | 2 |+| Drain-Source Breakdown Voltage (N2-Channel) | BVDSS | 40 | 45 | | V | VGS=0V ID=250μA | 7 |+| Zero Gate Voltage Drain Current (N2-Channel) | IDSS | | | 1 | μA | VDS=40V,VGS=0V | 7 |+| Gate-Body Leakage Current (N2-Channel) | IGSS | -100 | | 100 | nA | VGS=±20V,VDS=0V | 7 |+| Gate Threshold Voltage (N2-Channel) | VGS(th) | 1.2 | 1.6 | 2.5 | V | VDS=VGS,ID=250μA | 7 |+| Drain-Source On-State Resistance (N2-Channel) | RDS(ON) | | 11.7 | 14 | mΩ | VGS=10V, ID=10A | 7 |+| Drain-Source On-State Resistance (N2-Channel) | RDS(ON) | | 15.6 | 20 | mΩ | VGS=4.5V, ID=8A | 7 |+| Forward Transconductance (N2-Channel) | gFS | 75 | | | S | VDS=5V,ID=10A | 7 |+| Diode Forward Voltage (N2-Channel) | VSD | | | 1.2 | V | VGS=0V,IS=10A | 7 |+| Diode Forward Current (N2-Channel) | IS | | | 12 | A | | 7 |+ ## CAD (KiCad official) - Symbol: `NCE40ND0812S`
page.json+392−1@@ -178,6 +178,397 @@ "Package": "SOP-8", "Category": "Transistors/Thyristors", "Pins": "8"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "8b08e5e68c468551",+ "rows": [+ {+ "name": "Drain-Source Voltage (N1-Channel)",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 40,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Voltage (N2-Channel)",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 40,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage (N1-Channel)",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage (N2-Channel)",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (N1-Channel)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 8,+ "conditions": "TC=25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (N2-Channel)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 12,+ "conditions": "TC=25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (N1-Channel)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 5.7,+ "conditions": "TC=100℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (N2-Channel)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 8.5,+ "conditions": "TC=100℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current (N1-Channel)",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 32,+ "conditions": "Note 1",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current (N2-Channel)",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 60,+ "conditions": "Note 1",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation (N1-Channel)",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 2,+ "conditions": "TC=25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation (N2-Channel)",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 2.5,+ "conditions": "TC=25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction and Storage Temperature Range",+ "symbol": "TJ,TSTG",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction-to-Ambient (N1-Channel)",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": 62.5,+ "max": 85,+ "conditions": "Note 2",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction-to-Ambient (N2-Channel)",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": 50,+ "max": 75,+ "conditions": "Note 2",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage (N1-Channel)",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": 40,+ "typ": null,+ "max": null,+ "conditions": "VGS=0V ID=250μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current (N1-Channel)",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS=40V,VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Body Leakage Current (N1-Channel)",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VGS=±20V,VDS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage (N1-Channel)",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 1,+ "typ": 1.5,+ "max": 2,+ "conditions": "VDS=VGS,ID=250μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance (N1-Channel)",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 15.8,+ "max": 18,+ "conditions": "VGS=10V, ID=8A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance (N1-Channel)",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 22,+ "max": 28,+ "conditions": "VGS=4.5V, ID=4A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Forward Transconductance (N1-Channel)",+ "symbol": "gFS",+ "kind": "electrical",+ "unit": "S",+ "min": 33,+ "typ": null,+ "max": null,+ "conditions": "VDS=5V,ID=8A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Voltage (N1-Channel)",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 0.8,+ "max": 1.2,+ "conditions": "VGS=0V,IS=8A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage (N2-Channel)",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": 40,+ "typ": 45,+ "max": null,+ "conditions": "VGS=0V ID=250μA",+ "source_page": 7,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current (N2-Channel)",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS=40V,VGS=0V",+ "source_page": 7,+ "source": "datasheet"+ },+ {+ "name": "Gate-Body Leakage Current (N2-Channel)",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VGS=±20V,VDS=0V",+ "source_page": 7,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage (N2-Channel)",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 1.2,+ "typ": 1.6,+ "max": 2.5,+ "conditions": "VDS=VGS,ID=250μA",+ "source_page": 7,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance (N2-Channel)",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 11.7,+ "max": 14,+ "conditions": "VGS=10V, ID=10A",+ "source_page": 7,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance (N2-Channel)",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 15.6,+ "max": 20,+ "conditions": "VGS=4.5V, ID=8A",+ "source_page": 7,+ "source": "datasheet"+ },+ {+ "name": "Forward Transconductance (N2-Channel)",+ "symbol": "gFS",+ "kind": "electrical",+ "unit": "S",+ "min": 75,+ "typ": null,+ "max": null,+ "conditions": "VDS=5V,ID=10A",+ "source_page": 7,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Voltage (N2-Channel)",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1.2,+ "conditions": "VGS=0V,IS=10A",+ "source_page": 7,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Current (N2-Channel)",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 12,+ "conditions": "",+ "source_page": 7,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -219,4 +610,4 @@ "visibility": { "public": true }-}+}