# NCE2003

**Wuxi NCE Power Semiconductor** · MOSFETs · SOT-23-6L

NCE2003 from Wuxi NCE Power Semiconductor, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G1 | input | Gate of the N-channel MOSFET (Q1), with VGS limited to ±12V and RDS(ON) < 35mΩ at VGS=4.5V. |
| 2 | S2 | passive | Source of the P-channel MOSFET (Q2), with VDS = -20V and continuous ID = -3A at TA=25℃. |
| 3 | G2 | input | Gate of the P-channel MOSFET (Q2), with VGS limited to ±12V and RDS(ON) < 75mΩ at VGS=-4.5V. |
| 4 | D2 | passive | Drain of the P-channel MOSFET (Q2), with VDS = -20V and pulsed IDM of -13A. |
| 5 | S1 | passive | Source of the N-channel MOSFET (Q1), with VDS = 20V and continuous ID = 3A at TA=25℃. |
| 6 | D1 | passive | Drain of the N-channel MOSFET (Q1), with VDS = 20V and pulsed IDM of 13A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | SOT-23-6L |
| Category | Transistors/Thyristors |
| Pins | 6 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-channel) | VDS |  |  | 20 | V |  | 1 |
| Drain-Source Voltage (P-channel) | VDS | -20 |  |  | V |  | 1 |
| Gate-Source Voltage (N-channel) | VGS | -12 |  | 12 | V |  | 1 |
| Gate-Source Voltage (P-channel) | VGS | -12 |  | 12 | V |  | 1 |
| Continuous Drain Current (N-channel) | ID |  |  | 3 | A | TA=25℃ | 1 |
| Continuous Drain Current (P-channel) | ID | -3 |  |  | A | TA=25℃ | 1 |
| Continuous Drain Current (N-channel) | ID |  |  | 2.4 | A | TA=70℃ | 1 |
| Continuous Drain Current (P-channel) | ID | -2.4 |  |  | A | TA=70℃ | 1 |
| Pulsed Drain Current (N-channel) | IDM |  |  | 13 | A | Note 1 | 1 |
| Pulsed Drain Current (P-channel) | IDM | -13 |  |  | A | Note 1 | 1 |
| Maximum Power Dissipation (N-channel) | PD |  |  | 0.8 | W | TA=25℃ | 1 |
| Maximum Power Dissipation (P-channel) | PD |  |  | 0.8 | W | TA=25℃ | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance, Junction-to-Ambient (N-channel) | RθJA |  | 156 |  | ℃/W | Note 2 | 1 |
| Thermal Resistance, Junction-to-Ambient (P-channel) | RθJA |  | 156 |  | ℃/W | Note 2 | 1 |
| Drain-Source Breakdown Voltage (N-channel) | BVDSS | 20 | 22 |  | V | VGS=0V ID=250μA | 2 |
| Zero Gate Voltage Drain Current (N-channel) | IDSS |  |  | 1 | μA | VDS=20V,VGS=0V | 2 |
| Gate-Body Leakage Current (N-channel) | IGSS | -100 |  | 100 | nA | VGS=±12V,VDS=0V | 2 |
| Gate Threshold Voltage (N-channel) | VGS(th) | 0.5 | 0.75 | 1.2 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance (N-channel) | RDS(ON) |  | 36 | 55 | mΩ | VGS=2.5V, ID=2.8A | 2 |
| Drain-Source On-State Resistance (N-channel) | RDS(ON) |  | 28 | 35 | mΩ | VGS=4.5V, ID=3A | 2 |
| Total Gate Charge (N-channel) | Qg |  | 2.9 | 5 | nC |  | 2 |
| Diode Forward Voltage (N-channel) | VSD |  |  | 1.2 | V | VGS=0V,IS=3 A | 2 |
| Diode Forward Current (N-channel) | IS |  |  | 3 | A |  | 2 |
| Drain-Source Breakdown Voltage (P-channel) | BVDSS | -20 |  |  | V | VGS=0V ID=-250μA | 3 |
| Zero Gate Voltage Drain Current (P-channel) | IDSS |  |  | -1 | μA | VDS=-20V,VGS=0V | 3 |
| Gate-Body Leakage Current (P-channel) | IGSS | -100 |  | 100 | nA | VGS=±12V,VDS=0V | 3 |
| Gate Threshold Voltage (P-channel) | VGS(th) | -0.4 | -0.7 | -1 | V | VDS=VGS,ID=-250μA | 3 |
| Drain-Source On-State Resistance (P-channel) | RDS(ON) |  | 60 | 75 | mΩ | VGS=-4.5V, ID=-2.5 A | 3 |
| Drain-Source On-State Resistance (P-channel) | RDS(ON) |  | 81 | 100 | mΩ | VGS=-2.5V, ID=-2A | 3 |
| Diode Forward Voltage (P-channel) | VSD |  |  | -1.2 | V | VGS=0V,IS=-3A | 3 |
| Diode Forward Current (P-channel) | IS |  |  | -3 | A |  | 3 |

## CAD (KiCad official)

- Symbol: `NCE2003`
- Footprint: `Package_TO_SOT_SMD:SOT-23-6`
- 3D model: SOT-23-6L (KiCad packages3D, STEP)
- 3D model files: `nce2003-etched.step` / `nce2003-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `nce2003.step` / `nce2003.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Wuxi NCE Power Semiconductor datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588884764246228992) (11 pp, sha256 `e588ed37fe478ca7`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/nce2003-datasheet.pdf)