component
NCE2003
Public Made by Adomby adom
Wuxi NCE Power Semiconductor MOSFETs, SOT-23-6L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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nce2003: specified limits as data (metadata.characteristics, 32 rows from the datasheet)
2 files changed
+431−1
README.md+39@@ -24,6 +24,45 @@ NCE2003 from Wuxi NCE Power Semiconductor, in a SOT-23-6L. Pinout and pin descri | Category | Transistors/Thyristors | | Pins | 6 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage (N-channel) | VDS | | | 20 | V | | 1 |+| Drain-Source Voltage (P-channel) | VDS | -20 | | | V | | 1 |+| Gate-Source Voltage (N-channel) | VGS | -12 | | 12 | V | | 1 |+| Gate-Source Voltage (P-channel) | VGS | -12 | | 12 | V | | 1 |+| Continuous Drain Current (N-channel) | ID | | | 3 | A | TA=25℃ | 1 |+| Continuous Drain Current (P-channel) | ID | -3 | | | A | TA=25℃ | 1 |+| Continuous Drain Current (N-channel) | ID | | | 2.4 | A | TA=70℃ | 1 |+| Continuous Drain Current (P-channel) | ID | -2.4 | | | A | TA=70℃ | 1 |+| Pulsed Drain Current (N-channel) | IDM | | | 13 | A | Note 1 | 1 |+| Pulsed Drain Current (P-channel) | IDM | -13 | | | A | Note 1 | 1 |+| Maximum Power Dissipation (N-channel) | PD | | | 0.8 | W | TA=25℃ | 1 |+| Maximum Power Dissipation (P-channel) | PD | | | 0.8 | W | TA=25℃ | 1 |+| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | | 150 | ℃ | | 1 |+| Thermal Resistance, Junction-to-Ambient (N-channel) | RθJA | | 156 | | ℃/W | Note 2 | 1 |+| Thermal Resistance, Junction-to-Ambient (P-channel) | RθJA | | 156 | | ℃/W | Note 2 | 1 |+| Drain-Source Breakdown Voltage (N-channel) | BVDSS | 20 | 22 | | V | VGS=0V ID=250μA | 2 |+| Zero Gate Voltage Drain Current (N-channel) | IDSS | | | 1 | μA | VDS=20V,VGS=0V | 2 |+| Gate-Body Leakage Current (N-channel) | IGSS | -100 | | 100 | nA | VGS=±12V,VDS=0V | 2 |+| Gate Threshold Voltage (N-channel) | VGS(th) | 0.5 | 0.75 | 1.2 | V | VDS=VGS,ID=250μA | 2 |+| Drain-Source On-State Resistance (N-channel) | RDS(ON) | | 36 | 55 | mΩ | VGS=2.5V, ID=2.8A | 2 |+| Drain-Source On-State Resistance (N-channel) | RDS(ON) | | 28 | 35 | mΩ | VGS=4.5V, ID=3A | 2 |+| Total Gate Charge (N-channel) | Qg | | 2.9 | 5 | nC | | 2 |+| Diode Forward Voltage (N-channel) | VSD | | | 1.2 | V | VGS=0V,IS=3 A | 2 |+| Diode Forward Current (N-channel) | IS | | | 3 | A | | 2 |+| Drain-Source Breakdown Voltage (P-channel) | BVDSS | -20 | | | V | VGS=0V ID=-250μA | 3 |+| Zero Gate Voltage Drain Current (P-channel) | IDSS | | | -1 | μA | VDS=-20V,VGS=0V | 3 |+| Gate-Body Leakage Current (P-channel) | IGSS | -100 | | 100 | nA | VGS=±12V,VDS=0V | 3 |+| Gate Threshold Voltage (P-channel) | VGS(th) | -0.4 | -0.7 | -1 | V | VDS=VGS,ID=-250μA | 3 |+| Drain-Source On-State Resistance (P-channel) | RDS(ON) | | 60 | 75 | mΩ | VGS=-4.5V, ID=-2.5 A | 3 |+| Drain-Source On-State Resistance (P-channel) | RDS(ON) | | 81 | 100 | mΩ | VGS=-2.5V, ID=-2A | 3 |+| Diode Forward Voltage (P-channel) | VSD | | | -1.2 | V | VGS=0V,IS=-3A | 3 |+| Diode Forward Current (P-channel) | IS | | | -3 | A | | 3 |+ ## CAD (KiCad official) - Symbol: `NCE2003`
page.json+392−1@@ -166,6 +166,397 @@ "Package": "SOT-23-6L", "Category": "Transistors/Thyristors", "Pins": "6"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "e588ed37fe478ca7",+ "rows": [+ {+ "name": "Drain-Source Voltage (N-channel)",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Voltage (P-channel)",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": null,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage (N-channel)",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -12,+ "typ": null,+ "max": 12,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage (P-channel)",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -12,+ "typ": null,+ "max": 12,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (N-channel)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 3,+ "conditions": "TA=25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (P-channel)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -3,+ "typ": null,+ "max": null,+ "conditions": "TA=25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (N-channel)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 2.4,+ "conditions": "TA=70℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (P-channel)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -2.4,+ "typ": null,+ "max": null,+ "conditions": "TA=70℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current (N-channel)",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 13,+ "conditions": "Note 1",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current (P-channel)",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -13,+ "typ": null,+ "max": null,+ "conditions": "Note 1",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation (N-channel)",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 0.8,+ "conditions": "TA=25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation (P-channel)",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 0.8,+ "conditions": "TA=25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction and Storage Temperature Range",+ "symbol": "TJ,TSTG",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction-to-Ambient (N-channel)",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": 156,+ "max": null,+ "conditions": "Note 2",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction-to-Ambient (P-channel)",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": 156,+ "max": null,+ "conditions": "Note 2",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage (N-channel)",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": 20,+ "typ": 22,+ "max": null,+ "conditions": "VGS=0V ID=250μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current (N-channel)",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS=20V,VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Body Leakage Current (N-channel)",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VGS=±12V,VDS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage (N-channel)",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 0.5,+ "typ": 0.75,+ "max": 1.2,+ "conditions": "VDS=VGS,ID=250μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance (N-channel)",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 36,+ "max": 55,+ "conditions": "VGS=2.5V, ID=2.8A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance (N-channel)",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 28,+ "max": 35,+ "conditions": "VGS=4.5V, ID=3A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge (N-channel)",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 2.9,+ "max": 5,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Voltage (N-channel)",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1.2,+ "conditions": "VGS=0V,IS=3 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Current (N-channel)",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 3,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage (P-channel)",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": null,+ "conditions": "VGS=0V ID=-250μA",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current (P-channel)",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": -1,+ "conditions": "VDS=-20V,VGS=0V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate-Body Leakage Current (P-channel)",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VGS=±12V,VDS=0V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage (P-channel)",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": -0.4,+ "typ": -0.7,+ "max": -1,+ "conditions": "VDS=VGS,ID=-250μA",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance (P-channel)",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 60,+ "max": 75,+ "conditions": "VGS=-4.5V, ID=-2.5 A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance (P-channel)",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 81,+ "max": 100,+ "conditions": "VGS=-2.5V, ID=-2A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Voltage (P-channel)",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": -1.2,+ "conditions": "VGS=0V,IS=-3A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Current (P-channel)",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -3,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -207,4 +598,4 @@ "visibility": { "public": true }-}+}