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NCE2003
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Wuxi NCE Power Semiconductor MOSFETs, SOT-23-6L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 28d ago |
| viewers | 28d ago |
| nce2003-etched.glb | 28d ago |
| nce2003-etched.step | 28d ago |
| nce2003-hero.glb | 28d ago |
| nce2003-hero.overlay.json | 28d ago |
| nce2003.glb | 28d ago |
| nce2003.kicad_mod | 28d ago |
| nce2003.kicad_sym | 28d ago |
| nce2003.lbr | 28d ago |
| nce2003.step | 28d ago |
| package.json | 28d ago |
| page.json | 24d ago |
| README.md | 24d ago |
NCE2003
Wuxi NCE Power Semiconductor · MOSFETs · SOT-23-6L
NCE2003 from Wuxi NCE Power Semiconductor, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G1 | input | Gate of the N-channel MOSFET (Q1), with VGS limited to ±12V and RDS(ON) < 35mΩ at VGS=4.5V. |
| 2 | S2 | passive | Source of the P-channel MOSFET (Q2), with VDS = -20V and continuous ID = -3A at TA=25℃. |
| 3 | G2 | input | Gate of the P-channel MOSFET (Q2), with VGS limited to ±12V and RDS(ON) < 75mΩ at VGS=-4.5V. |
| 4 | D2 | passive | Drain of the P-channel MOSFET (Q2), with VDS = -20V and pulsed IDM of -13A. |
| 5 | S1 | passive | Source of the N-channel MOSFET (Q1), with VDS = 20V and continuous ID = 3A at TA=25℃. |
| 6 | D1 | passive | Drain of the N-channel MOSFET (Q1), with VDS = 20V and pulsed IDM of 13A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | SOT-23-6L |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-channel) | VDS | 20 | V | 1 | |||
| Drain-Source Voltage (P-channel) | VDS | -20 | V | 1 | |||
| Gate-Source Voltage (N-channel) | VGS | -12 | 12 | V | 1 | ||
| Gate-Source Voltage (P-channel) | VGS | -12 | 12 | V | 1 | ||
| Continuous Drain Current (N-channel) | ID | 3 | A | TA=25℃ | 1 | ||
| Continuous Drain Current (P-channel) | ID | -3 | A | TA=25℃ | 1 | ||
| Continuous Drain Current (N-channel) | ID | 2.4 | A | TA=70℃ | 1 | ||
| Continuous Drain Current (P-channel) | ID | -2.4 | A | TA=70℃ | 1 | ||
| Pulsed Drain Current (N-channel) | IDM | 13 | A | Note 1 | 1 | ||
| Pulsed Drain Current (P-channel) | IDM | -13 | A | Note 1 | 1 | ||
| Maximum Power Dissipation (N-channel) | PD | 0.8 | W | TA=25℃ | 1 | ||
| Maximum Power Dissipation (P-channel) | PD | 0.8 | W | TA=25℃ | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Ambient (N-channel) | RθJA | 156 | ℃/W | Note 2 | 1 | ||
| Thermal Resistance, Junction-to-Ambient (P-channel) | RθJA | 156 | ℃/W | Note 2 | 1 | ||
| Drain-Source Breakdown Voltage (N-channel) | BVDSS | 20 | 22 | V | VGS=0V ID=250μA | 2 | |
| Zero Gate Voltage Drain Current (N-channel) | IDSS | 1 | μA | VDS=20V,VGS=0V | 2 | ||
| Gate-Body Leakage Current (N-channel) | IGSS | -100 | 100 | nA | VGS=±12V,VDS=0V | 2 | |
| Gate Threshold Voltage (N-channel) | VGS(th) | 0.5 | 0.75 | 1.2 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance (N-channel) | RDS(ON) | 36 | 55 | mΩ | VGS=2.5V, ID=2.8A | 2 | |
| Drain-Source On-State Resistance (N-channel) | RDS(ON) | 28 | 35 | mΩ | VGS=4.5V, ID=3A | 2 | |
| Total Gate Charge (N-channel) | Qg | 2.9 | 5 | nC | 2 | ||
| Diode Forward Voltage (N-channel) | VSD | 1.2 | V | VGS=0V,IS=3 A | 2 | ||
| Diode Forward Current (N-channel) | IS | 3 | A | 2 | |||
| Drain-Source Breakdown Voltage (P-channel) | BVDSS | -20 | V | VGS=0V ID=-250μA | 3 | ||
| Zero Gate Voltage Drain Current (P-channel) | IDSS | -1 | μA | VDS=-20V,VGS=0V | 3 | ||
| Gate-Body Leakage Current (P-channel) | IGSS | -100 | 100 | nA | VGS=±12V,VDS=0V | 3 | |
| Gate Threshold Voltage (P-channel) | VGS(th) | -0.4 | -0.7 | -1 | V | VDS=VGS,ID=-250μA | 3 |
| Drain-Source On-State Resistance (P-channel) | RDS(ON) | 60 | 75 | mΩ | VGS=-4.5V, ID=-2.5 A | 3 | |
| Drain-Source On-State Resistance (P-channel) | RDS(ON) | 81 | 100 | mΩ | VGS=-2.5V, ID=-2A | 3 | |
| Diode Forward Voltage (P-channel) | VSD | -1.2 | V | VGS=0V,IS=-3A | 3 | ||
| Diode Forward Current (P-channel) | IS | -3 | A | 3 |
CAD (KiCad official)
- Symbol:
NCE2003 - Footprint:
Package_TO_SOT_SMD:SOT-23-6 - 3D model: SOT-23-6L (KiCad packages3D, STEP)
- 3D model files:
nce2003-etched.step/nce2003-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nce2003.step/nce2003.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wuxi NCE Power Semiconductor datasheet (11 pp, sha256
e588ed37fe478ca7, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).