# MS50N06

**MSKSEMI** · MOSFETs · TO-252-2

MS50N06 from MSKSEMI, in a TO-252-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with an absolute maximum gate-source voltage of ±20 V and a threshold of 1.0 to 2.5 V at 250 uA. |
| 2 | D | passive | Drain, connected to the tab; carries up to 50 A continuous at TC=25℃ (200 A pulsed) with a 60 V maximum drain-source voltage. |
| 3 | S | passive | Source; the current return path for the 50 A continuous drain current. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | TO-252-2 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 60 | V |  | 2 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 2 |
| Drain Current - Continuous | ID |  |  | 50 | A | TC=25℃ | 2 |
| Drain Current - Continuous | ID |  |  | 35 | A | TC=100℃ | 2 |
| Drain Current - Pulsed | IDM |  |  | 200 | A | Note 1: pulse width limited by maximum junction temperature | 2 |
| Power Dissipation | PD |  |  | 65 | W | TC=25℃ | 2 |
| Power Dissipation - Derate above 25℃ | PD |  | 0.5 |  | W/℃ | Derate above 25℃ | 2 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 2 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | ℃ |  | 2 |
| Thermal Resistance Junction to ambient | RθJA |  |  | 62 | ℃/W |  | 2 |
| Thermal Resistance Junction to Case | RθJC |  |  | 2 | ℃/W |  | 2 |
| Drain-Source Breakdown Voltage | BVDSS | 60 |  |  | V | VGS=0V, ID=250uA | 3 |
| Drain-Source Leakage Current | IDSS |  |  | 1 | uA | VDS=60V, VGS=0V, TJ=25℃ | 3 |
| Drain-Source Leakage Current | IDSS |  |  | 10 | uA | VDS=48V, VGS=0V, TJ=125℃ | 3 |
| Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0V | 3 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 12 | 16 | mΩ | VGS=10V, ID=20A | 3 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 16 | 20 | mΩ | VGS=4.5V, ID=10A | 3 |
| Gate Threshold Voltage | VGS(th) | 1 | 1.6 | 2.5 | V | VGS=VDS, ID=250uA | 3 |
| Continuous Source Current | IS |  |  | 50 | A | VG=VD=0V, Force Current | 3 |
| Pulsed Source Current | ISM |  |  | 100 | A |  | 3 |
| Diode Forward Voltage | VSD |  |  | 1.2 | V | VGS=0V, IS=1A, TJ=25℃ | 3 |

## CAD (KiCad official)

- Symbol: `MS50N06`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252-2 (KiCad packages3D, STEP)
- 3D model files: `ms50n06-etched.step` / `ms50n06-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ms50n06.step` / `ms50n06.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [MSKSEMI datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8757890263857537024) (7 pp, sha256 `607354428ed9acdb`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ms50n06-datasheet.pdf)