component
MS50N06
Public Made by Adomby adom
MSKSEMI MOSFETs, TO-252-2. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 17d ago |
| viewers | 24d ago |
| ms50n06-etched.glb | 17d ago |
| ms50n06-etched.step | 17d ago |
| ms50n06-hero.glb | 17d ago |
| ms50n06-hero.overlay.json | 17d ago |
| ms50n06.glb | 24d ago |
| ms50n06.kicad_mod | 24d ago |
| ms50n06.kicad_sym | 24d ago |
| ms50n06.lbr | 24d ago |
| ms50n06.step | 24d ago |
| package.json | 17d ago |
| page.json | 17d ago |
| README.md | 17d ago |
MS50N06
MSKSEMI · MOSFETs · TO-252-2
MS50N06 from MSKSEMI, in a TO-252-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with an absolute maximum gate-source voltage of ±20 V and a threshold of 1.0 to 2.5 V at 250 uA. |
| 2 | D | passive | Drain, connected to the tab; carries up to 50 A continuous at TC=25℃ (200 A pulsed) with a 60 V maximum drain-source voltage. |
| 3 | S | passive | Source; the current return path for the 50 A continuous drain current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | TO-252-2 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | 2 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 2 | ||
| Drain Current - Continuous | ID | 50 | A | TC=25℃ | 2 | ||
| Drain Current - Continuous | ID | 35 | A | TC=100℃ | 2 | ||
| Drain Current - Pulsed | IDM | 200 | A | Note 1: pulse width limited by maximum junction temperature | 2 | ||
| Power Dissipation | PD | 65 | W | TC=25℃ | 2 | ||
| Power Dissipation - Derate above 25℃ | PD | 0.5 | W/℃ | Derate above 25℃ | 2 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 2 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 2 | ||
| Thermal Resistance Junction to ambient | RθJA | 62 | ℃/W | 2 | |||
| Thermal Resistance Junction to Case | RθJC | 2 | ℃/W | 2 | |||
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V, ID=250uA | 3 | ||
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=60V, VGS=0V, TJ=25℃ | 3 | ||
| Drain-Source Leakage Current | IDSS | 10 | uA | VDS=48V, VGS=0V, TJ=125℃ | 3 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 3 | |
| Static Drain-Source On-Resistance | RDS(ON) | 12 | 16 | mΩ | VGS=10V, ID=20A | 3 | |
| Static Drain-Source On-Resistance | RDS(ON) | 16 | 20 | mΩ | VGS=4.5V, ID=10A | 3 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.6 | 2.5 | V | VGS=VDS, ID=250uA | 3 |
| Continuous Source Current | IS | 50 | A | VG=VD=0V, Force Current | 3 | ||
| Pulsed Source Current | ISM | 100 | A | 3 | |||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=1A, TJ=25℃ | 3 |
CAD (KiCad official)
- Symbol:
MS50N06 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2 (KiCad packages3D, STEP)
- 3D model files:
ms50n06-etched.step/ms50n06-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ms50n06.step/ms50n06.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MSKSEMI datasheet (7 pp, sha256
607354428ed9acdb, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).