component
MS50N06
Public Made by Adomby adom
MSKSEMI MOSFETs, TO-252-2. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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ms50n06: specified limits as data (metadata.characteristics, 21 rows from the datasheet)
2 files changed
+288−1
README.md+28@@ -21,6 +21,34 @@ MS50N06 from MSKSEMI, in a TO-252-2. Pinout and pin descriptions extracted from | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage | VDS | | | 60 | V | | 2 |+| Gate-Source Voltage | VGS | -20 | | 20 | V | | 2 |+| Drain Current - Continuous | ID | | | 50 | A | TC=25℃ | 2 |+| Drain Current - Continuous | ID | | | 35 | A | TC=100℃ | 2 |+| Drain Current - Pulsed | IDM | | | 200 | A | Note 1: pulse width limited by maximum junction temperature | 2 |+| Power Dissipation | PD | | | 65 | W | TC=25℃ | 2 |+| Power Dissipation - Derate above 25℃ | PD | | 0.5 | | W/℃ | Derate above 25℃ | 2 |+| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 2 |+| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 2 |+| Thermal Resistance Junction to ambient | RθJA | | | 62 | ℃/W | | 2 |+| Thermal Resistance Junction to Case | RθJC | | | 2 | ℃/W | | 2 |+| Drain-Source Breakdown Voltage | BVDSS | 60 | | | V | VGS=0V, ID=250uA | 3 |+| Drain-Source Leakage Current | IDSS | | | 1 | uA | VDS=60V, VGS=0V, TJ=25℃ | 3 |+| Drain-Source Leakage Current | IDSS | | | 10 | uA | VDS=48V, VGS=0V, TJ=125℃ | 3 |+| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 3 |+| Static Drain-Source On-Resistance | RDS(ON) | | 12 | 16 | mΩ | VGS=10V, ID=20A | 3 |+| Static Drain-Source On-Resistance | RDS(ON) | | 16 | 20 | mΩ | VGS=4.5V, ID=10A | 3 |+| Gate Threshold Voltage | VGS(th) | 1 | 1.6 | 2.5 | V | VGS=VDS, ID=250uA | 3 |+| Continuous Source Current | IS | | | 50 | A | VG=VD=0V, Force Current | 3 |+| Pulsed Source Current | ISM | | | 100 | A | | 3 |+| Diode Forward Voltage | VSD | | | 1.2 | V | VGS=0V, IS=1A, TJ=25℃ | 3 |+ ## CAD (KiCad official) - Symbol: `MS50N06`
page.json+260−1@@ -148,6 +148,265 @@ "Package": "TO-252-2", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "607354428ed9acdb",+ "rows": [+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 60,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain Current - Continuous",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "TC=25℃",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain Current - Continuous",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 35,+ "conditions": "TC=100℃",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain Current - Pulsed",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 200,+ "conditions": "Note 1: pulse width limited by maximum junction temperature",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 65,+ "conditions": "TC=25℃",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation - Derate above 25℃",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W/℃",+ "min": null,+ "typ": 0.5,+ "max": null,+ "conditions": "Derate above 25℃",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Storage Temperature Range",+ "symbol": "TSTG",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction Temperature Range",+ "symbol": "TJ",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance Junction to ambient",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": null,+ "max": 62,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance Junction to Case",+ "symbol": "RθJC",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": null,+ "max": 2,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": 60,+ "typ": null,+ "max": null,+ "conditions": "VGS=0V, ID=250uA",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Leakage Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "uA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS=60V, VGS=0V, TJ=25℃",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Leakage Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "uA",+ "min": null,+ "typ": null,+ "max": 10,+ "conditions": "VDS=48V, VGS=0V, TJ=125℃",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Leakage Current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VGS=±20V, VDS=0V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-Source On-Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 12,+ "max": 16,+ "conditions": "VGS=10V, ID=20A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-Source On-Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 16,+ "max": 20,+ "conditions": "VGS=4.5V, ID=10A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 1,+ "typ": 1.6,+ "max": 2.5,+ "conditions": "VGS=VDS, ID=250uA",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Continuous Source Current",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "VG=VD=0V, Force Current",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Source Current",+ "symbol": "ISM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1.2,+ "conditions": "VGS=0V, IS=1A, TJ=25℃",+ "source_page": 3,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -189,4 +448,4 @@ "visibility": { "public": true }-}+}