# MMBTSC3875G

**PJSEMI** · Bipolar (BJT) · SOT-23

MMBTSC3875G from PJSEMI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | input | Base terminal of the NPN transistor; the datasheet gives emitter-base voltage VEBO of 5 V maximum and emitter-base breakdown V(BR)EBO of 5 V minimum. |
| 2 | Emitter | passive | Emitter terminal of the NPN transistor; collector current IC is rated at 150 mA maximum, with power dissipation PD of 150 mW. |
| 3 | Collector | passive | Collector terminal of the NPN transistor; the datasheet gives collector-base voltage VCBO of 60 V and collector-emitter voltage VCEO of 50 V as maximum ratings. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | PJSEMI |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| DC Current Gain (Group G) | HFE | 200 |  | 400 |  | VCE = 6 V, IC = 2 mA | 2 |
| Collector Base Cutoff Current | ICBO |  |  | 100 | nA | VCB = 60 V | 2 |
| Emitter Base Cutoff Current | IEBO |  |  | 100 | nA | VEB = 5 V | 2 |
| Emitter Base Breakdown Voltage | V(BR)EBO | 5 |  |  | V | IE = 100 μA | 2 |
| Collector Emitter Saturation Voltage | VCE(sat) |  | 0.1 | 0.25 | V | IC = 100 mA, IB = 10 mA | 2 |
| Base Emitter Saturation Voltage | VBE(sat) |  |  | 1 | V | IC = 100 mA, IB = 10 mA | 2 |
| Transition Frequency | fT | 80 |  |  | MHz | VCE = 10 V, IC = 1 mA | 2 |
| Collector Base Capacitance | Cob |  |  | 3.5 | pF | VCB = 10 V, f = 1 MHz | 2 |
| Collector Base Breakdown Voltage | V(BR)CBO | 60 |  |  | V | IC = 100 μA | 2 |
| Collector Emitter Breakdown Voltage | V(BR)CEO | 50 |  |  | V | IC = 1 mA | 2 |
| Collector Base Voltage | VCBO |  |  | 60 | V |  | 1 |
| Collector Emitter Voltage | VCEO |  |  | 50 | V |  | 1 |
| Emitter Base Voltage | VEBO |  |  | 5 | V |  | 1 |
| Collector Current | IC |  |  | 150 | mA |  | 1 |
| Power Dissipation | PD |  |  | 150 | mW |  | 1 |
| Junction Temperature | TJ |  |  | 150 | ℃ |  | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 1 |

## CAD (KiCad official)

- Symbol: `MMBTSC3875G`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `mmbtsc3875g-etched.step` / `mmbtsc3875g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mmbtsc3875g.step` / `mmbtsc3875g.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [PJSEMI datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588884480970514432) (4 pp, sha256 `fc0419e55f7f19a5`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/mmbtsc3875g-datasheet.pdf)