component
MMBTSC3875G
Public Made by Adomby adom
PJSEMI Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownMMBTSC3875G
PJSEMI · Bipolar (BJT) · SOT-23
MMBTSC3875G from PJSEMI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | input | Base terminal of the NPN transistor; the datasheet gives emitter-base voltage VEBO of 5 V maximum and emitter-base breakdown V(BR)EBO of 5 V minimum. |
| 2 | Emitter | passive | Emitter terminal of the NPN transistor; collector current IC is rated at 150 mA maximum, with power dissipation PD of 150 mW. |
| 3 | Collector | passive | Collector terminal of the NPN transistor; the datasheet gives collector-base voltage VCBO of 60 V and collector-emitter voltage VCEO of 50 V as maximum ratings. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | PJSEMI |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| DC Current Gain (Group G) | HFE | 200 | 400 | VCE = 6 V, IC = 2 mA | 2 | ||
| Collector Base Cutoff Current | ICBO | 100 | nA | VCB = 60 V | 2 | ||
| Emitter Base Cutoff Current | IEBO | 100 | nA | VEB = 5 V | 2 | ||
| Emitter Base Breakdown Voltage | V(BR)EBO | 5 | V | IE = 100 μA | 2 | ||
| Collector Emitter Saturation Voltage | VCE(sat) | 0.1 | 0.25 | V | IC = 100 mA, IB = 10 mA | 2 | |
| Base Emitter Saturation Voltage | VBE(sat) | 1 | V | IC = 100 mA, IB = 10 mA | 2 | ||
| Transition Frequency | fT | 80 | MHz | VCE = 10 V, IC = 1 mA | 2 | ||
| Collector Base Capacitance | Cob | 3.5 | pF | VCB = 10 V, f = 1 MHz | 2 | ||
| Collector Base Breakdown Voltage | V(BR)CBO | 60 | V | IC = 100 μA | 2 | ||
| Collector Emitter Breakdown Voltage | V(BR)CEO | 50 | V | IC = 1 mA | 2 | ||
| Collector Base Voltage | VCBO | 60 | V | 1 | |||
| Collector Emitter Voltage | VCEO | 50 | V | 1 | |||
| Emitter Base Voltage | VEBO | 5 | V | 1 | |||
| Collector Current | IC | 150 | mA | 1 | |||
| Power Dissipation | PD | 150 | mW | 1 | |||
| Junction Temperature | TJ | 150 | ℃ | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 |
CAD (KiCad official)
- Symbol:
MMBTSC3875G - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
mmbtsc3875g-etched.step/mmbtsc3875g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mmbtsc3875g.step/mmbtsc3875g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: PJSEMI datasheet (4 pp, sha256
fc0419e55f7f19a5, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).