main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 23d ago
viewers mmbtsc3875g: viewers · Ray 23d ago
mmbtsc3875g-etched.glb Publish 0.1.0 · Ray 23d ago
mmbtsc3875g-etched.step mmbtsc3875g: factory component page (tier=lcsc) · Ray 23d ago
mmbtsc3875g-hero.glb mmbtsc3875g: hero GLB from the etched model (keeps the MPN mark) · Ray 23d ago
mmbtsc3875g-hero.overlay.json Publish 0.1.0 · Ray 23d ago
mmbtsc3875g.glb Publish 0.1.0 · Ray 23d ago
mmbtsc3875g.kicad_mod Publish 0.1.0 · Ray 23d ago
mmbtsc3875g.kicad_sym Publish 0.1.0 · Ray 23d ago
mmbtsc3875g.lbr Publish 0.1.0 · Ray 23d ago
mmbtsc3875g.step Publish 0.1.0 · Ray 23d ago
package.json Publish 0.1.0 · Ray 23d ago
page.json Set visibility: public · Ray 23d ago
README.md Publish 0.1.0 · Ray 23d ago

MMBTSC3875G

PJSEMI · Bipolar (BJT) · SOT-23

MMBTSC3875G from PJSEMI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Base input Base terminal of the NPN transistor; the datasheet gives emitter-base voltage VEBO of 5 V maximum and emitter-base breakdown V(BR)EBO of 5 V minimum.
2 Emitter passive Emitter terminal of the NPN transistor; collector current IC is rated at 150 mA maximum, with power dissipation PD of 150 mW.
3 Collector passive Collector terminal of the NPN transistor; the datasheet gives collector-base voltage VCBO of 60 V and collector-emitter voltage VCEO of 50 V as maximum ratings.

Key specifications

Parameter Value
Manufacturer PJSEMI
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
DC Current Gain (Group G) HFE 200 400 VCE = 6 V, IC = 2 mA 2
Collector Base Cutoff Current ICBO 100 nA VCB = 60 V 2
Emitter Base Cutoff Current IEBO 100 nA VEB = 5 V 2
Emitter Base Breakdown Voltage V(BR)EBO 5 V IE = 100 μA 2
Collector Emitter Saturation Voltage VCE(sat) 0.1 0.25 V IC = 100 mA, IB = 10 mA 2
Base Emitter Saturation Voltage VBE(sat) 1 V IC = 100 mA, IB = 10 mA 2
Transition Frequency fT 80 MHz VCE = 10 V, IC = 1 mA 2
Collector Base Capacitance Cob 3.5 pF VCB = 10 V, f = 1 MHz 2
Collector Base Breakdown Voltage V(BR)CBO 60 V IC = 100 μA 2
Collector Emitter Breakdown Voltage V(BR)CEO 50 V IC = 1 mA 2
Collector Base Voltage VCBO 60 V 1
Collector Emitter Voltage VCEO 50 V 1
Emitter Base Voltage VEBO 5 V 1
Collector Current IC 150 mA 1
Power Dissipation PD 150 mW 1
Junction Temperature TJ 150 ℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1

CAD (KiCad official)

  • Symbol: MMBTSC3875G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mmbtsc3875g-etched.step / mmbtsc3875g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbtsc3875g.step / mmbtsc3875g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: PJSEMI datasheet (4 pp, sha256 fc0419e55f7f19a5, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF