# MMBTA63LT1G

**onsemi** · Darlington Transistors · SOT-23

MMBTA63LT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base control input for PNP Darlington transistor; emitter-base voltage absolute maximum rating is −10 Vdc. |
| 2 | EMITTER | passive | Emitter terminal; collector-emitter voltage absolute maximum rating is −30 Vdc. |
| 3 | COLLECTOR | passive | Collector terminal; absolute maximum ratings are −30 Vdc for collector-emitter and collector-base voltages, and −500 mAdc continuous collector current. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCES | -30 |  |  | Vdc |  | 1 |
| Collector-Base Voltage | VCBO | -30 |  |  | Vdc |  | 1 |
| Emitter-Base Voltage | VEBO | -10 |  |  | Vdc |  | 1 |
| Collector Current - Continuous | IC | -500 |  |  | mAdc |  | 1 |
| Junction and Storage Temperature | TJ, Tstg | -55 |  | 150 | °C |  | 1 |
| Total Device Dissipation, FR-5 Board (Note 1) | PD |  |  | 225 | mW | FR-5 board, TA = 25°C | 1 |
| Derate above 25°C, FR-5 Board | PD |  |  | 1.8 | mW/°C | FR-5 board, derate above TA = 25°C | 1 |
| Thermal Resistance, Junction-to-Ambient, FR-5 Board | RθJA |  |  | 556 | °C/W | FR-5 board | 1 |
| Total Device Dissipation, Alumina Substrate (Note 2) | PD |  |  | 300 | mW | Alumina substrate, TA = 25°C | 1 |
| Derate above 25°C, Alumina Substrate | PD |  |  | 2.4 | mW/°C | Alumina substrate, derate above TA = 25°C | 1 |
| Thermal Resistance, Junction-to-Ambient, Alumina Substrate | RθJA |  |  | 417 | °C/W | Alumina substrate | 1 |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | -30 |  |  | Vdc | IC = -100 Adc | 2 |
| Collector Cutoff Current | ICBO |  |  | -100 | nAdc | VCB = -30 Vdc | 2 |
| Emitter Cutoff Current | IEBO |  |  | -100 | nAdc | VEB = -10 Vdc | 2 |
| DC Current Gain (MMBTA63) | hFE | 5000 |  |  |  | IC = -10 mAdc, VCE = -5.0 Vdc | 2 |
| DC Current Gain (MMBTA63) | hFE | 10000 |  |  |  | IC = -100 mAdc, VCE = -5.0 Vdc | 2 |
| Collector-Emitter Saturation Voltage | VCE(sat) |  |  | -1.5 | Vdc | IC = -100 mAdc, IB = -0.1 mAdc | 2 |
| Base-Emitter On Voltage | VBE(on) |  |  | -2 | Vdc | IC = -100 mAdc, VCE = -5.0 Vdc | 2 |
| Current-Gain - Bandwidth Product | fT | 125 |  |  | MHz | IC = -10 mAdc, VCE = -5.0 Vdc, f = 100 MHz | 2 |

## CAD (KiCad official)

- Symbol: `MMBTA63LT1G`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `mmbta63lt1g-etched.step` / `mmbta63lt1g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mmbta63lt1g.step` / `mmbta63lt1g.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [onsemi datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588910893342068736) (4 pp, sha256 `52b8835529afbc88`, retrieved 2026-09-21, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.2`, primary `claude-haiku-4-5-20251001` (text), consensus `claude-sonnet-4-6` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/mmbta63lt1g-datasheet.pdf)