component
MMBTA63LT1G
Public Made by Adomby adom
onsemi Darlington Transistors, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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mmbta63lt1g: specified limits as data (metadata.characteristics, 19 rows from the datasheet)
2 files changed
+261
README.md+26@@ -21,6 +21,32 @@ MMBTA63LT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Collector-Emitter Voltage | VCES | -30 | | | Vdc | | 1 |+| Collector-Base Voltage | VCBO | -30 | | | Vdc | | 1 |+| Emitter-Base Voltage | VEBO | -10 | | | Vdc | | 1 |+| Collector Current - Continuous | IC | -500 | | | mAdc | | 1 |+| Junction and Storage Temperature | TJ, Tstg | -55 | | 150 | °C | | 1 |+| Total Device Dissipation, FR-5 Board (Note 1) | PD | | | 225 | mW | FR-5 board, TA = 25°C | 1 |+| Derate above 25°C, FR-5 Board | PD | | | 1.8 | mW/°C | FR-5 board, derate above TA = 25°C | 1 |+| Thermal Resistance, Junction-to-Ambient, FR-5 Board | RθJA | | | 556 | °C/W | FR-5 board | 1 |+| Total Device Dissipation, Alumina Substrate (Note 2) | PD | | | 300 | mW | Alumina substrate, TA = 25°C | 1 |+| Derate above 25°C, Alumina Substrate | PD | | | 2.4 | mW/°C | Alumina substrate, derate above TA = 25°C | 1 |+| Thermal Resistance, Junction-to-Ambient, Alumina Substrate | RθJA | | | 417 | °C/W | Alumina substrate | 1 |+| Collector-Emitter Breakdown Voltage | V(BR)CEO | -30 | | | Vdc | IC = -100 Adc | 2 |+| Collector Cutoff Current | ICBO | | | -100 | nAdc | VCB = -30 Vdc | 2 |+| Emitter Cutoff Current | IEBO | | | -100 | nAdc | VEB = -10 Vdc | 2 |+| DC Current Gain (MMBTA63) | hFE | 5000 | | | | IC = -10 mAdc, VCE = -5.0 Vdc | 2 |+| DC Current Gain (MMBTA63) | hFE | 10000 | | | | IC = -100 mAdc, VCE = -5.0 Vdc | 2 |+| Collector-Emitter Saturation Voltage | VCE(sat) | | | -1.5 | Vdc | IC = -100 mAdc, IB = -0.1 mAdc | 2 |+| Base-Emitter On Voltage | VBE(on) | | | -2 | Vdc | IC = -100 mAdc, VCE = -5.0 Vdc | 2 |+| Current-Gain - Bandwidth Product | fT | 125 | | | MHz | IC = -10 mAdc, VCE = -5.0 Vdc, f = 100 MHz | 2 |+ ## CAD (KiCad official) - Symbol: `MMBTA63LT1G`
page.json+235@@ -133,6 +133,241 @@ "Package": "SOT-23", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "52b8835529afbc88",+ "rows": [+ {+ "name": "Collector-Emitter Voltage",+ "symbol": "VCES",+ "kind": "absolute_maximum",+ "unit": "Vdc",+ "min": -30,+ "typ": null,+ "max": null,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Collector-Base Voltage",+ "symbol": "VCBO",+ "kind": "absolute_maximum",+ "unit": "Vdc",+ "min": -30,+ "typ": null,+ "max": null,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Emitter-Base Voltage",+ "symbol": "VEBO",+ "kind": "absolute_maximum",+ "unit": "Vdc",+ "min": -10,+ "typ": null,+ "max": null,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Collector Current - Continuous",+ "symbol": "IC",+ "kind": "absolute_maximum",+ "unit": "mAdc",+ "min": -500,+ "typ": null,+ "max": null,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction and Storage Temperature",+ "symbol": "TJ, Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Total Device Dissipation, FR-5 Board (Note 1)",+ "symbol": "PD",+ "kind": "thermal",+ "unit": "mW",+ "min": null,+ "typ": null,+ "max": 225,+ "conditions": "FR-5 board, TA = 25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Derate above 25°C, FR-5 Board",+ "symbol": "PD",+ "kind": "thermal",+ "unit": "mW/°C",+ "min": null,+ "typ": null,+ "max": 1.8,+ "conditions": "FR-5 board, derate above TA = 25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction-to-Ambient, FR-5 Board",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 556,+ "conditions": "FR-5 board",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Total Device Dissipation, Alumina Substrate (Note 2)",+ "symbol": "PD",+ "kind": "thermal",+ "unit": "mW",+ "min": null,+ "typ": null,+ "max": 300,+ "conditions": "Alumina substrate, TA = 25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Derate above 25°C, Alumina Substrate",+ "symbol": "PD",+ "kind": "thermal",+ "unit": "mW/°C",+ "min": null,+ "typ": null,+ "max": 2.4,+ "conditions": "Alumina substrate, derate above TA = 25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction-to-Ambient, Alumina Substrate",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 417,+ "conditions": "Alumina substrate",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Collector-Emitter Breakdown Voltage",+ "symbol": "V(BR)CEO",+ "kind": "electrical",+ "unit": "Vdc",+ "min": -30,+ "typ": null,+ "max": null,+ "conditions": "IC = -100 Adc",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector Cutoff Current",+ "symbol": "ICBO",+ "kind": "electrical",+ "unit": "nAdc",+ "min": null,+ "typ": null,+ "max": -100,+ "conditions": "VCB = -30 Vdc",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Emitter Cutoff Current",+ "symbol": "IEBO",+ "kind": "electrical",+ "unit": "nAdc",+ "min": null,+ "typ": null,+ "max": -100,+ "conditions": "VEB = -10 Vdc",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "DC Current Gain (MMBTA63)",+ "symbol": "hFE",+ "kind": "electrical",+ "unit": "",+ "min": 5000,+ "typ": null,+ "max": null,+ "conditions": "IC = -10 mAdc, VCE = -5.0 Vdc",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "DC Current Gain (MMBTA63)",+ "symbol": "hFE",+ "kind": "electrical",+ "unit": "",+ "min": 10000,+ "typ": null,+ "max": null,+ "conditions": "IC = -100 mAdc, VCE = -5.0 Vdc",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector-Emitter Saturation Voltage",+ "symbol": "VCE(sat)",+ "kind": "electrical",+ "unit": "Vdc",+ "min": null,+ "typ": null,+ "max": -1.5,+ "conditions": "IC = -100 mAdc, IB = -0.1 mAdc",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Base-Emitter On Voltage",+ "symbol": "VBE(on)",+ "kind": "electrical",+ "unit": "Vdc",+ "min": null,+ "typ": null,+ "max": -2,+ "conditions": "IC = -100 mAdc, VCE = -5.0 Vdc",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Current-Gain - Bandwidth Product",+ "symbol": "fT",+ "kind": "electrical",+ "unit": "MHz",+ "min": 125,+ "typ": null,+ "max": null,+ "conditions": "IC = -10 mAdc, VCE = -5.0 Vdc, f = 100 MHz",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],