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MMBTA63LT1G

Public Made by Adom

by adom

onsemi Darlington Transistors, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

markdown

MMBTA63LT1G

onsemi · Darlington Transistors · SOT-23

MMBTA63LT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base control input for PNP Darlington transistor; emitter-base voltage absolute maximum rating is −10 Vdc.
2 EMITTER passive Emitter terminal; collector-emitter voltage absolute maximum rating is −30 Vdc.
3 COLLECTOR passive Collector terminal; absolute maximum ratings are −30 Vdc for collector-emitter and collector-base voltages, and −500 mAdc continuous collector current.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Voltage VCES -30 Vdc 1
Collector-Base Voltage VCBO -30 Vdc 1
Emitter-Base Voltage VEBO -10 Vdc 1
Collector Current - Continuous IC -500 mAdc 1
Junction and Storage Temperature TJ, Tstg -55 150 °C 1
Total Device Dissipation, FR-5 Board (Note 1) PD 225 mW FR-5 board, TA = 25°C 1
Derate above 25°C, FR-5 Board PD 1.8 mW/°C FR-5 board, derate above TA = 25°C 1
Thermal Resistance, Junction-to-Ambient, FR-5 Board RθJA 556 °C/W FR-5 board 1
Total Device Dissipation, Alumina Substrate (Note 2) PD 300 mW Alumina substrate, TA = 25°C 1
Derate above 25°C, Alumina Substrate PD 2.4 mW/°C Alumina substrate, derate above TA = 25°C 1
Thermal Resistance, Junction-to-Ambient, Alumina Substrate RθJA 417 °C/W Alumina substrate 1
Collector-Emitter Breakdown Voltage V(BR)CEO -30 Vdc IC = -100 Adc 2
Collector Cutoff Current ICBO -100 nAdc VCB = -30 Vdc 2
Emitter Cutoff Current IEBO -100 nAdc VEB = -10 Vdc 2
DC Current Gain (MMBTA63) hFE 5000 IC = -10 mAdc, VCE = -5.0 Vdc 2
DC Current Gain (MMBTA63) hFE 10000 IC = -100 mAdc, VCE = -5.0 Vdc 2
Collector-Emitter Saturation Voltage VCE(sat) -1.5 Vdc IC = -100 mAdc, IB = -0.1 mAdc 2
Base-Emitter On Voltage VBE(on) -2 Vdc IC = -100 mAdc, VCE = -5.0 Vdc 2
Current-Gain - Bandwidth Product fT 125 MHz IC = -10 mAdc, VCE = -5.0 Vdc, f = 100 MHz 2

CAD (KiCad official)

  • Symbol: MMBTA63LT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mmbta63lt1g-etched.step / mmbta63lt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbta63lt1g.step / mmbta63lt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (4 pp, sha256 52b8835529afbc88, retrieved 2026-09-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.2, primary claude-haiku-4-5-20251001 (text), consensus claude-sonnet-4-6 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF