component

MMBT5089LT1G

Public Made by Adom

by adom

onsemi Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Ray mmbt5089lt1g: specified limits as data (metadata.characteristics, 22 rows from the datasheet) 0958f68 17d ago

MMBT5089LT1G

onsemi · Bipolar (BJT) · SOT-23

MMBT5089LT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE passive Base terminal of the NPN low-noise transistor; the emitter-base voltage rating is 4.5 Vdc (VEBO) and the maximum continuous collector current is 50 mAdc.
2 EMITTER passive Emitter terminal of the NPN low-noise transistor; the emitter-base voltage rating is 4.5 Vdc (VEBO), and the emitter cutoff current is specified at VEB(off) = 4.5 Vdc for the MMBT5089L.
3 COLLECTOR passive Collector terminal of the NPN low-noise transistor; the collector-emitter voltage is limited to 25 Vdc (VCEO) for the MMBT5089L and the continuous collector current to 50 mAdc.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Breakdown Voltage V(BR)CEO 25 Vdc IC = 1.0 mAdc, IB = 0 2
Collector-Base Breakdown Voltage V(BR)CBO 30 Vdc IC = 100 Adc, IE = 0 2
Collector Cutoff Current ICBO 50 nAdc VCB = 15 Vdc, IE = 0 2
Emitter Cutoff Current IEBO 100 nAdc VEB(off) = 4.5 Vdc, IC = 0 2
DC Current Gain hFE 400 IC = 100 Adc, VCE = 5.0 Vdc 2
DC Current Gain hFE 450 IC = 1.0 mAdc, VCE = 5.0 Vdc 2
Collector-Emitter Saturation Voltage VCE(sat) 0.5 Vdc IC = 10 mAdc, IB = 1.0 mAdc 2
Base-Emitter Saturation Voltage VBE(sat) 0.8 Vdc IC = 10 mAdc, IB = 1.0 mAdc 2
Current-Gain Bandwidth Product fT 50 MHz IC = 500 Adc, VCE = 5.0 Vdc, f = 20 MHz 2
Collector-Base Capacitance Ccb 4 pF VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz emitter guarded 2
Emitter-Base Capacitance Ceb 10 pF VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz collector guarded 2
Small Signal Current Gain hfe 450 1800 IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz 2
Noise Figure NF 2 dB IC = 100 Adc, VCE = 5.0 Vdc, RS = 10 k, f = 1.0 kHz 2
Collector-Base Voltage VCBO 30 Vdc 1
Collector-Emitter Voltage VCEO 25 Vdc 1
Emitter-Base Voltage VEBO 4.5 Vdc 1
Collector Current - Continuous IC 50 mAdc 1
Total Device Dissipation PD 225 mW FR-5 Board (Note 1), TA = 25°C 1
Total Device Dissipation PD 300 mW Alumina Substrate (Note 2), TA = 25°C 1
Thermal Resistance, Junction-to-Ambient RJA 556 °C/W FR-5 Board (Note 1) 1
Thermal Resistance, Junction-to-Ambient RJA 417 °C/W Alumina Substrate (Note 2) 1
Junction and Storage Temperature TJ, Tstg -55 150 °C 1

CAD (KiCad official)

  • Symbol: MMBT5089LT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mmbt5089lt1g-etched.step / mmbt5089lt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbt5089lt1g.step / mmbt5089lt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (5 pp, sha256 eb61aa1474a5a65c, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF