component
MMBT5089LT1G
Public Made by Adomby adom
onsemi Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
← Commit history
mmbt5089lt1g: specified limits as data (metadata.characteristics, 22 rows from the datasheet)
2 files changed
+301−1
README.md+29@@ -21,6 +21,35 @@ MMBT5089LT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted fro | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Collector-Emitter Breakdown Voltage | V(BR)CEO | 25 | | | Vdc | IC = 1.0 mAdc, IB = 0 | 2 |+| Collector-Base Breakdown Voltage | V(BR)CBO | 30 | | | Vdc | IC = 100 Adc, IE = 0 | 2 |+| Collector Cutoff Current | ICBO | | | 50 | nAdc | VCB = 15 Vdc, IE = 0 | 2 |+| Emitter Cutoff Current | IEBO | | | 100 | nAdc | VEB(off) = 4.5 Vdc, IC = 0 | 2 |+| DC Current Gain | hFE | 400 | | | | IC = 100 Adc, VCE = 5.0 Vdc | 2 |+| DC Current Gain | hFE | 450 | | | | IC = 1.0 mAdc, VCE = 5.0 Vdc | 2 |+| Collector-Emitter Saturation Voltage | VCE(sat) | | | 0.5 | Vdc | IC = 10 mAdc, IB = 1.0 mAdc | 2 |+| Base-Emitter Saturation Voltage | VBE(sat) | | | 0.8 | Vdc | IC = 10 mAdc, IB = 1.0 mAdc | 2 |+| Current-Gain Bandwidth Product | fT | 50 | | | MHz | IC = 500 Adc, VCE = 5.0 Vdc, f = 20 MHz | 2 |+| Collector-Base Capacitance | Ccb | | | 4 | pF | VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz emitter guarded | 2 |+| Emitter-Base Capacitance | Ceb | | | 10 | pF | VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz collector guarded | 2 |+| Small Signal Current Gain | hfe | 450 | | 1800 | | IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz | 2 |+| Noise Figure | NF | | | 2 | dB | IC = 100 Adc, VCE = 5.0 Vdc, RS = 10 k, f = 1.0 kHz | 2 |+| Collector-Base Voltage | VCBO | | | 30 | Vdc | | 1 |+| Collector-Emitter Voltage | VCEO | | | 25 | Vdc | | 1 |+| Emitter-Base Voltage | VEBO | | | 4.5 | Vdc | | 1 |+| Collector Current - Continuous | IC | | | 50 | mAdc | | 1 |+| Total Device Dissipation | PD | | | 225 | mW | FR-5 Board (Note 1), TA = 25°C | 1 |+| Total Device Dissipation | PD | | | 300 | mW | Alumina Substrate (Note 2), TA = 25°C | 1 |+| Thermal Resistance, Junction-to-Ambient | RJA | | | 556 | °C/W | FR-5 Board (Note 1) | 1 |+| Thermal Resistance, Junction-to-Ambient | RJA | | | 417 | °C/W | Alumina Substrate (Note 2) | 1 |+| Junction and Storage Temperature | TJ, Tstg | -55 | | 150 | °C | | 1 |+ ## CAD (KiCad official) - Symbol: `MMBT5089LT1G`
page.json+272−1@@ -150,6 +150,277 @@ "Package": "SOT-23", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "eb61aa1474a5a65c",+ "rows": [+ {+ "name": "Collector-Emitter Breakdown Voltage",+ "symbol": "V(BR)CEO",+ "kind": "electrical",+ "unit": "Vdc",+ "min": 25,+ "typ": null,+ "max": null,+ "conditions": "IC = 1.0 mAdc, IB = 0",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector-Base Breakdown Voltage",+ "symbol": "V(BR)CBO",+ "kind": "electrical",+ "unit": "Vdc",+ "min": 30,+ "typ": null,+ "max": null,+ "conditions": "IC = 100 Adc, IE = 0",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector Cutoff Current",+ "symbol": "ICBO",+ "kind": "electrical",+ "unit": "nAdc",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "VCB = 15 Vdc, IE = 0",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Emitter Cutoff Current",+ "symbol": "IEBO",+ "kind": "electrical",+ "unit": "nAdc",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VEB(off) = 4.5 Vdc, IC = 0",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "DC Current Gain",+ "symbol": "hFE",+ "kind": "electrical",+ "unit": "",+ "min": 400,+ "typ": null,+ "max": null,+ "conditions": "IC = 100 Adc, VCE = 5.0 Vdc",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "DC Current Gain",+ "symbol": "hFE",+ "kind": "electrical",+ "unit": "",+ "min": 450,+ "typ": null,+ "max": null,+ "conditions": "IC = 1.0 mAdc, VCE = 5.0 Vdc",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector-Emitter Saturation Voltage",+ "symbol": "VCE(sat)",+ "kind": "electrical",+ "unit": "Vdc",+ "min": null,+ "typ": null,+ "max": 0.5,+ "conditions": "IC = 10 mAdc, IB = 1.0 mAdc",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Base-Emitter Saturation Voltage",+ "symbol": "VBE(sat)",+ "kind": "electrical",+ "unit": "Vdc",+ "min": null,+ "typ": null,+ "max": 0.8,+ "conditions": "IC = 10 mAdc, IB = 1.0 mAdc",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Current-Gain Bandwidth Product",+ "symbol": "fT",+ "kind": "electrical",+ "unit": "MHz",+ "min": 50,+ "typ": null,+ "max": null,+ "conditions": "IC = 500 Adc, VCE = 5.0 Vdc, f = 20 MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector-Base Capacitance",+ "symbol": "Ccb",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": null,+ "max": 4,+ "conditions": "VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz emitter guarded",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Emitter-Base Capacitance",+ "symbol": "Ceb",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": null,+ "max": 10,+ "conditions": "VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz collector guarded",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Small Signal Current Gain",+ "symbol": "hfe",+ "kind": "electrical",+ "unit": "",+ "min": 450,+ "typ": null,+ "max": 1800,+ "conditions": "IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Noise Figure",+ "symbol": "NF",+ "kind": "electrical",+ "unit": "dB",+ "min": null,+ "typ": null,+ "max": 2,+ "conditions": "IC = 100 Adc, VCE = 5.0 Vdc, RS = 10 k, f = 1.0 kHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector-Base Voltage",+ "symbol": "VCBO",+ "kind": "absolute_maximum",+ "unit": "Vdc",+ "min": null,+ "typ": null,+ "max": 30,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Collector-Emitter Voltage",+ "symbol": "VCEO",+ "kind": "absolute_maximum",+ "unit": "Vdc",+ "min": null,+ "typ": null,+ "max": 25,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Emitter-Base Voltage",+ "symbol": "VEBO",+ "kind": "absolute_maximum",+ "unit": "Vdc",+ "min": null,+ "typ": null,+ "max": 4.5,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Collector Current - Continuous",+ "symbol": "IC",+ "kind": "absolute_maximum",+ "unit": "mAdc",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Total Device Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "mW",+ "min": null,+ "typ": null,+ "max": 225,+ "conditions": "FR-5 Board (Note 1), TA = 25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Total Device Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "mW",+ "min": null,+ "typ": null,+ "max": 300,+ "conditions": "Alumina Substrate (Note 2), TA = 25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction-to-Ambient",+ "symbol": "RJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 556,+ "conditions": "FR-5 Board (Note 1)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction-to-Ambient",+ "symbol": "RJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 417,+ "conditions": "Alumina Substrate (Note 2)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction and Storage Temperature",+ "symbol": "TJ, Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -191,4 +462,4 @@ "visibility": { "public": true }-}+}