component
MMBT5089LT1G
Public Made by Adomby adom
onsemi Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 24d ago |
| viewers | 24d ago |
| mmbt5089lt1g-etched.glb | 24d ago |
| mmbt5089lt1g-etched.step | 24d ago |
| mmbt5089lt1g-hero.glb | 24d ago |
| mmbt5089lt1g-hero.overlay.json | 24d ago |
| mmbt5089lt1g.glb | 24d ago |
| mmbt5089lt1g.kicad_mod | 24d ago |
| mmbt5089lt1g.kicad_sym | 24d ago |
| mmbt5089lt1g.lbr | 24d ago |
| mmbt5089lt1g.step | 24d ago |
| package.json | 24d ago |
| page.json | 17d ago |
| README.md | 17d ago |
MMBT5089LT1G
onsemi · Bipolar (BJT) · SOT-23
MMBT5089LT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | passive | Base terminal of the NPN low-noise transistor; the emitter-base voltage rating is 4.5 Vdc (VEBO) and the maximum continuous collector current is 50 mAdc. |
| 2 | EMITTER | passive | Emitter terminal of the NPN low-noise transistor; the emitter-base voltage rating is 4.5 Vdc (VEBO), and the emitter cutoff current is specified at VEB(off) = 4.5 Vdc for the MMBT5089L. |
| 3 | COLLECTOR | passive | Collector terminal of the NPN low-noise transistor; the collector-emitter voltage is limited to 25 Vdc (VCEO) for the MMBT5089L and the continuous collector current to 50 mAdc. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 25 | Vdc | IC = 1.0 mAdc, IB = 0 | 2 | ||
| Collector-Base Breakdown Voltage | V(BR)CBO | 30 | Vdc | IC = 100 Adc, IE = 0 | 2 | ||
| Collector Cutoff Current | ICBO | 50 | nAdc | VCB = 15 Vdc, IE = 0 | 2 | ||
| Emitter Cutoff Current | IEBO | 100 | nAdc | VEB(off) = 4.5 Vdc, IC = 0 | 2 | ||
| DC Current Gain | hFE | 400 | IC = 100 Adc, VCE = 5.0 Vdc | 2 | |||
| DC Current Gain | hFE | 450 | IC = 1.0 mAdc, VCE = 5.0 Vdc | 2 | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.5 | Vdc | IC = 10 mAdc, IB = 1.0 mAdc | 2 | ||
| Base-Emitter Saturation Voltage | VBE(sat) | 0.8 | Vdc | IC = 10 mAdc, IB = 1.0 mAdc | 2 | ||
| Current-Gain Bandwidth Product | fT | 50 | MHz | IC = 500 Adc, VCE = 5.0 Vdc, f = 20 MHz | 2 | ||
| Collector-Base Capacitance | Ccb | 4 | pF | VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz emitter guarded | 2 | ||
| Emitter-Base Capacitance | Ceb | 10 | pF | VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz collector guarded | 2 | ||
| Small Signal Current Gain | hfe | 450 | 1800 | IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz | 2 | ||
| Noise Figure | NF | 2 | dB | IC = 100 Adc, VCE = 5.0 Vdc, RS = 10 k, f = 1.0 kHz | 2 | ||
| Collector-Base Voltage | VCBO | 30 | Vdc | 1 | |||
| Collector-Emitter Voltage | VCEO | 25 | Vdc | 1 | |||
| Emitter-Base Voltage | VEBO | 4.5 | Vdc | 1 | |||
| Collector Current - Continuous | IC | 50 | mAdc | 1 | |||
| Total Device Dissipation | PD | 225 | mW | FR-5 Board (Note 1), TA = 25°C | 1 | ||
| Total Device Dissipation | PD | 300 | mW | Alumina Substrate (Note 2), TA = 25°C | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RJA | 556 | °C/W | FR-5 Board (Note 1) | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RJA | 417 | °C/W | Alumina Substrate (Note 2) | 1 | ||
| Junction and Storage Temperature | TJ, Tstg | -55 | 150 | °C | 1 |
CAD (KiCad official)
- Symbol:
MMBT5089LT1G - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
mmbt5089lt1g-etched.step/mmbt5089lt1g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mmbt5089lt1g.step/mmbt5089lt1g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (5 pp, sha256
eb61aa1474a5a65c, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).