# MDD4N65D

**MDD Microdiode Semiconductor** · MOSFETs · TO-252

MDD4N65D from MDD Microdiode Semiconductor, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS rated ±30 V and threshold VGS(TH) 2.0 to 4.0 V at VDS=VGS, ID=250μA. |
| 2 | D | passive | Drain (also the tab); VDS rated 650 V with continuous drain current ID of 4 A and RDS(on) max 2.8 Ω at VGS=10 V. |
| 3 | S | passive | Source; continuous body-diode forward current IS is 4 A and pulsed diode current is 16 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | MDD Microdiode Semiconductor |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 650 |  |  | V | VGS=0V, ID=250μA | 2 |
| Gate-Source Leakage Current | IGSS |  |  | 100 | nA | VGS=30V, VDS=0V | 2 |
| Gate-Source Leakage Current (reverse) | IGSS |  |  | -100 | nA | VGS=-30V, VDS=0V | 2 |
| Drain-Source Leakage Current | IDSS |  |  | 1 | uA | VDS=650V, VGS=0V | 2 |
| Gate Threshold Voltage | VGS(TH) | 2 |  | 4 | V | VDS=VGS, ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) |  | 2.5 | 2.8 | Ω | VGS=10V, ID=2A | 2 |
| Turn on Delay Time | td(on) |  |  | 12 | ns | VDS=325V, ID=4A, RG=10Ω (Note1,2) | 2 |
| Turn on Rise Time | tr |  |  | 31 | ns | VDS=325V, ID=4A, RG=10Ω (Note1,2) | 2 |
| Turn Off Delay Time | td(off) |  |  | 42 | ns | VDS=325V, ID=4A, RG=10Ω (Note1,2) | 2 |
| Turn Off Fall Time | tf |  |  | 15 | ns | VDS=325V, ID=4A, RG=10Ω (Note1,2) | 2 |
| Source drain current (Body Diode) | ISD |  |  | 4 | A |  | 2 |
| Pulsed Current | ISM |  |  | 16 | A |  | 2 |
| Input Capacitance | Ciss |  | 600 |  | pF | VDS=25V, VGS=0V, f=1MHz | 2 |
| Output Capacitance | Coss |  | 55 |  | pF | VDS=25V, VGS=0V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 3.2 |  | pF | VDS=25V, VGS=0V, f=1MHz | 2 |
| Total Gate Charge | Qg |  | 12 |  | nC | VDS=520V, VGS=10V, ID=4A (Note1,2) | 2 |
| Gate Source Charge | Qgs |  | 3.2 |  | nC | VDS=520V, VGS=10V, ID=4A (Note1,2) | 2 |
| Gate Drain Charge | Qgd |  | 5.1 |  | nC | VDS=520V, VGS=10V, ID=4A (Note1,2) | 2 |
| Drain-Source Diode Forward Voltage | VSD |  | 1.5 |  | V | IS=4A, VGS=0V | 2 |
| Body Diode Reverse Recovery Time | trr |  | 282 |  | ns | VR=400, IF=4A, -diF/dt=100A/µs | 2 |
| Body Diode Reverse Recovery Charge | Qrr |  | 1.4 |  | uC | VR=400, IF=4A, -diF/dt=100A/µs | 2 |
| Drain-Source Voltage | VDS |  |  | 650 | V |  | 1 |
| Gate-Source Voltage | VGS | -30 |  | 30 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 4 | A |  | 1 |
| Pulsed Drain Current | IDM |  |  | 16 | A | Pulse width limited by maximum junction temperature (Note 1) | 1 |
| Avalanche Energy Single Pulsed | EAS |  |  | 198 | mJ | L=10mH, IAS=6.3A, Starting Tj=25°C (Note 2) | 1 |
| Peak Diode Recovery dv/dt | dv/dt |  |  | 5 | V/ns | ISD=4A, di/dt≤100A/us, VDD≤BVDS, Starting Tj=25°C (Note 3) | 1 |
| Diode pulse current | IS,pulse |  |  | 16 | A |  | 1 |
| Power Dissipation TO-220/TO-252 | PD |  |  | 77 | W | TO-220/TO-252 package | 1 |
| Continuous diode forward current | IS |  |  | 4 | A |  | 1 |
| Junction Temperature | TJ |  |  | 150 | ℃ |  | 1 |
| Storage Temperature | Tstg | -55 |  | 150 | ℃ |  | 1 |
| Thermal resistance, Junction-to-case (TO-252) | RθJC |  |  | 1.62 | °C/W | TO-220/TO-252 column | 1 |
| Thermal resistance, Junction-to-ambient (TO-252) | RθJA |  |  | 62.5 | °C/W | TO-220/TO-252 column | 1 |

## CAD (KiCad official)

- Symbol: `MDD4N65D`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `mdd4n65d-etched.step` / `mdd4n65d-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mdd4n65d.step` / `mdd4n65d.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [MDD Microdiode Semiconductor datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590904092556541952) (9 pp, sha256 `e7a8b0da3ff74144`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/mdd4n65d-datasheet.pdf)