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MDD4N65D

Public Made by Adom

by adom

MDD Microdiode Semiconductor MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Generated by kicad-footprint-generator · KiCad file format 20260206
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docs mdd4n65d: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 17d ago
viewers mdd4n65d: viewers · Ray 24d ago
mdd4n65d-etched.glb mdd4n65d: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 17d ago
mdd4n65d-etched.step mdd4n65d: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 17d ago
mdd4n65d-hero.glb mdd4n65d: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 17d ago
mdd4n65d-hero.overlay.json mdd4n65d: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 17d ago
mdd4n65d.glb Publish 0.1.0 · Ray 24d ago
mdd4n65d.kicad_mod Publish 0.1.0 · Ray 24d ago
mdd4n65d.kicad_sym Publish 0.1.0 · Ray 24d ago
mdd4n65d.lbr Publish 0.1.0 · Ray 24d ago
mdd4n65d.step Publish 0.1.0 · Ray 24d ago
package.json mdd4n65d: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 17d ago
page.json mdd4n65d: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 17d ago
README.md mdd4n65d: specified limits as data (metadata.characteristics, 34 rows from the datasheet) · Ray 19d ago

MDD4N65D

MDD Microdiode Semiconductor · MOSFETs · TO-252

MDD4N65D from MDD Microdiode Semiconductor, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with VGS rated ±30 V and threshold VGS(TH) 2.0 to 4.0 V at VDS=VGS, ID=250μA.
2 D passive Drain (also the tab); VDS rated 650 V with continuous drain current ID of 4 A and RDS(on) max 2.8 Ω at VGS=10 V.
3 S passive Source; continuous body-diode forward current IS is 4 A and pulsed diode current is 16 A.

Key specifications

Parameter Value
Manufacturer MDD Microdiode Semiconductor
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS 650 V VGS=0V, ID=250μA 2
Gate-Source Leakage Current IGSS 100 nA VGS=30V, VDS=0V 2
Gate-Source Leakage Current (reverse) IGSS -100 nA VGS=-30V, VDS=0V 2
Drain-Source Leakage Current IDSS 1 uA VDS=650V, VGS=0V 2
Gate Threshold Voltage VGS(TH) 2 4 V VDS=VGS, ID=250μA 2
Drain-Source On-State Resistance RDS(ON) 2.5 2.8 Ω VGS=10V, ID=2A 2
Turn on Delay Time td(on) 12 ns VDS=325V, ID=4A, RG=10Ω (Note1,2) 2
Turn on Rise Time tr 31 ns VDS=325V, ID=4A, RG=10Ω (Note1,2) 2
Turn Off Delay Time td(off) 42 ns VDS=325V, ID=4A, RG=10Ω (Note1,2) 2
Turn Off Fall Time tf 15 ns VDS=325V, ID=4A, RG=10Ω (Note1,2) 2
Source drain current (Body Diode) ISD 4 A 2
Pulsed Current ISM 16 A 2
Input Capacitance Ciss 600 pF VDS=25V, VGS=0V, f=1MHz 2
Output Capacitance Coss 55 pF VDS=25V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 3.2 pF VDS=25V, VGS=0V, f=1MHz 2
Total Gate Charge Qg 12 nC VDS=520V, VGS=10V, ID=4A (Note1,2) 2
Gate Source Charge Qgs 3.2 nC VDS=520V, VGS=10V, ID=4A (Note1,2) 2
Gate Drain Charge Qgd 5.1 nC VDS=520V, VGS=10V, ID=4A (Note1,2) 2
Drain-Source Diode Forward Voltage VSD 1.5 V IS=4A, VGS=0V 2
Body Diode Reverse Recovery Time trr 282 ns VR=400, IF=4A, -diF/dt=100A/µs 2
Body Diode Reverse Recovery Charge Qrr 1.4 uC VR=400, IF=4A, -diF/dt=100A/µs 2
Drain-Source Voltage VDS 650 V 1
Gate-Source Voltage VGS -30 30 V 1
Continuous Drain Current ID 4 A 1
Pulsed Drain Current IDM 16 A Pulse width limited by maximum junction temperature (Note 1) 1
Avalanche Energy Single Pulsed EAS 198 mJ L=10mH, IAS=6.3A, Starting Tj=25°C (Note 2) 1
Peak Diode Recovery dv/dt dv/dt 5 V/ns ISD=4A, di/dt≤100A/us, VDD≤BVDS, Starting Tj=25°C (Note 3) 1
Diode pulse current IS,pulse 16 A 1
Power Dissipation TO-220/TO-252 PD 77 W TO-220/TO-252 package 1
Continuous diode forward current IS 4 A 1
Junction Temperature TJ 150 ℃ 1
Storage Temperature Tstg -55 150 ℃ 1
Thermal resistance, Junction-to-case (TO-252) RθJC 1.62 °C/W TO-220/TO-252 column 1
Thermal resistance, Junction-to-ambient (TO-252) RθJA 62.5 °C/W TO-220/TO-252 column 1

CAD (KiCad official)

  • Symbol: MDD4N65D
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: mdd4n65d-etched.step / mdd4n65d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mdd4n65d.step / mdd4n65d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MDD Microdiode Semiconductor datasheet (9 pp, sha256 e7a8b0da3ff74144, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF