component
MDD4N65D
Public Made by Adomby adom
MDD Microdiode Semiconductor MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
← Commit history
mdd4n65d: specified limits as data (metadata.characteristics, 34 rows from the datasheet)
2 files changed
+457−1
README.md+41@@ -21,6 +21,47 @@ MDD4N65D from MDD Microdiode Semiconductor, in a TO-252. Pinout and pin descript | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Breakdown Voltage | V(BR)DSS | 650 | | | V | VGS=0V, ID=250μA | 2 |+| Gate-Source Leakage Current | IGSS | | | 100 | nA | VGS=30V, VDS=0V | 2 |+| Gate-Source Leakage Current (reverse) | IGSS | | | -100 | nA | VGS=-30V, VDS=0V | 2 |+| Drain-Source Leakage Current | IDSS | | | 1 | uA | VDS=650V, VGS=0V | 2 |+| Gate Threshold Voltage | VGS(TH) | 2 | | 4 | V | VDS=VGS, ID=250μA | 2 |+| Drain-Source On-State Resistance | RDS(ON) | | 2.5 | 2.8 | Ω | VGS=10V, ID=2A | 2 |+| Turn on Delay Time | td(on) | | | 12 | ns | VDS=325V, ID=4A, RG=10Ω (Note1,2) | 2 |+| Turn on Rise Time | tr | | | 31 | ns | VDS=325V, ID=4A, RG=10Ω (Note1,2) | 2 |+| Turn Off Delay Time | td(off) | | | 42 | ns | VDS=325V, ID=4A, RG=10Ω (Note1,2) | 2 |+| Turn Off Fall Time | tf | | | 15 | ns | VDS=325V, ID=4A, RG=10Ω (Note1,2) | 2 |+| Source drain current (Body Diode) | ISD | | | 4 | A | | 2 |+| Pulsed Current | ISM | | | 16 | A | | 2 |+| Input Capacitance | Ciss | | 600 | | pF | VDS=25V, VGS=0V, f=1MHz | 2 |+| Output Capacitance | Coss | | 55 | | pF | VDS=25V, VGS=0V, f=1MHz | 2 |+| Reverse Transfer Capacitance | Crss | | 3.2 | | pF | VDS=25V, VGS=0V, f=1MHz | 2 |+| Total Gate Charge | Qg | | 12 | | nC | VDS=520V, VGS=10V, ID=4A (Note1,2) | 2 |+| Gate Source Charge | Qgs | | 3.2 | | nC | VDS=520V, VGS=10V, ID=4A (Note1,2) | 2 |+| Gate Drain Charge | Qgd | | 5.1 | | nC | VDS=520V, VGS=10V, ID=4A (Note1,2) | 2 |+| Drain-Source Diode Forward Voltage | VSD | | 1.5 | | V | IS=4A, VGS=0V | 2 |+| Body Diode Reverse Recovery Time | trr | | 282 | | ns | VR=400, IF=4A, -diF/dt=100A/µs | 2 |+| Body Diode Reverse Recovery Charge | Qrr | | 1.4 | | uC | VR=400, IF=4A, -diF/dt=100A/µs | 2 |+| Drain-Source Voltage | VDS | | | 650 | V | | 1 |+| Gate-Source Voltage | VGS | -30 | | 30 | V | | 1 |+| Continuous Drain Current | ID | | | 4 | A | | 1 |+| Pulsed Drain Current | IDM | | | 16 | A | Pulse width limited by maximum junction temperature (Note 1) | 1 |+| Avalanche Energy Single Pulsed | EAS | | | 198 | mJ | L=10mH, IAS=6.3A, Starting Tj=25°C (Note 2) | 1 |+| Peak Diode Recovery dv/dt | dv/dt | | | 5 | V/ns | ISD=4A, di/dt≤100A/us, VDD≤BVDS, Starting Tj=25°C (Note 3) | 1 |+| Diode pulse current | IS,pulse | | | 16 | A | | 1 |+| Power Dissipation TO-220/TO-252 | PD | | | 77 | W | TO-220/TO-252 package | 1 |+| Continuous diode forward current | IS | | | 4 | A | | 1 |+| Junction Temperature | TJ | | | 150 | ℃ | | 1 |+| Storage Temperature | Tstg | -55 | | 150 | ℃ | | 1 |+| Thermal resistance, Junction-to-case (TO-252) | RθJC | | | 1.62 | °C/W | TO-220/TO-252 column | 1 |+| Thermal resistance, Junction-to-ambient (TO-252) | RθJA | | | 62.5 | °C/W | TO-220/TO-252 column | 1 |+ ## CAD (KiCad official) - Symbol: `MDD4N65D`
page.json+416−1@@ -150,6 +150,421 @@ "Package": "TO-252", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "e7a8b0da3ff74144",+ "rows": [+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": 650,+ "typ": null,+ "max": null,+ "conditions": "VGS=0V, ID=250μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Leakage Current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VGS=30V, VDS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Leakage Current (reverse)",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": -100,+ "conditions": "VGS=-30V, VDS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Leakage Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "uA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS=650V, VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(TH)",+ "kind": "electrical",+ "unit": "V",+ "min": 2,+ "typ": null,+ "max": 4,+ "conditions": "VDS=VGS, ID=250μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 2.5,+ "max": 2.8,+ "conditions": "VGS=10V, ID=2A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn on Delay Time",+ "symbol": "td(on)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": null,+ "max": 12,+ "conditions": "VDS=325V, ID=4A, RG=10Ω (Note1,2)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn on Rise Time",+ "symbol": "tr",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": null,+ "max": 31,+ "conditions": "VDS=325V, ID=4A, RG=10Ω (Note1,2)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn Off Delay Time",+ "symbol": "td(off)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": null,+ "max": 42,+ "conditions": "VDS=325V, ID=4A, RG=10Ω (Note1,2)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn Off Fall Time",+ "symbol": "tf",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": null,+ "max": 15,+ "conditions": "VDS=325V, ID=4A, RG=10Ω (Note1,2)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Source drain current (Body Diode)",+ "symbol": "ISD",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 4,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Current",+ "symbol": "ISM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 16,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Input Capacitance",+ "symbol": "Ciss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 600,+ "max": null,+ "conditions": "VDS=25V, VGS=0V, f=1MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Output Capacitance",+ "symbol": "Coss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 55,+ "max": null,+ "conditions": "VDS=25V, VGS=0V, f=1MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Transfer Capacitance",+ "symbol": "Crss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 3.2,+ "max": null,+ "conditions": "VDS=25V, VGS=0V, f=1MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 12,+ "max": null,+ "conditions": "VDS=520V, VGS=10V, ID=4A (Note1,2)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Source Charge",+ "symbol": "Qgs",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 3.2,+ "max": null,+ "conditions": "VDS=520V, VGS=10V, ID=4A (Note1,2)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Drain Charge",+ "symbol": "Qgd",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 5.1,+ "max": null,+ "conditions": "VDS=520V, VGS=10V, ID=4A (Note1,2)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Diode Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 1.5,+ "max": null,+ "conditions": "IS=4A, VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Body Diode Reverse Recovery Time",+ "symbol": "trr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 282,+ "max": null,+ "conditions": "VR=400, IF=4A, -diF/dt=100A/µs",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Body Diode Reverse Recovery Charge",+ "symbol": "Qrr",+ "kind": "electrical",+ "unit": "uC",+ "min": null,+ "typ": 1.4,+ "max": null,+ "conditions": "VR=400, IF=4A, -diF/dt=100A/µs",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 650,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -30,+ "typ": null,+ "max": 30,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 4,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 16,+ "conditions": "Pulse width limited by maximum junction temperature (Note 1)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Avalanche Energy Single Pulsed",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 198,+ "conditions": "L=10mH, IAS=6.3A, Starting Tj=25°C (Note 2)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Peak Diode Recovery dv/dt",+ "symbol": "dv/dt",+ "kind": "absolute_maximum",+ "unit": "V/ns",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "ISD=4A, di/dt≤100A/us, VDD≤BVDS, Starting Tj=25°C (Note 3)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Diode pulse current",+ "symbol": "IS,pulse",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 16,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation TO-220/TO-252",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 77,+ "conditions": "TO-220/TO-252 package",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous diode forward current",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 4,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction Temperature",+ "symbol": "TJ",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": null,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Storage Temperature",+ "symbol": "Tstg",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance, Junction-to-case (TO-252)",+ "symbol": "RθJC",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 1.62,+ "conditions": "TO-220/TO-252 column",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance, Junction-to-ambient (TO-252)",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 62.5,+ "conditions": "TO-220/TO-252 column",+ "source_page": 1,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -191,4 +606,4 @@ "visibility": { "public": true }-}+}