# LWS1H90A4

**Lewa Micro** · MOSFETs · TO-252

LWS1H90A4 from Lewa Micro, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the P-channel MOSFET, with a maximum gate-to-source voltage of ±20 V. |
| 2 | D | passive | Drain; rated for a drain-to-source voltage of -100 V and a continuous drain current of -25 A at TC=25℃. |
| 3 | S | passive | Source; body diode is connected between drain and source, with a forward voltage of -1.2 V maximum at IS=-10A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Lewa Micro |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS |  |  | -100 | V |  | 1 |
| Gate-to-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Pulsed Drain Current | IDM |  |  | -100 | A |  | 1 |
| Single pulse avalanche energy | EAS |  |  | 200 | mJ |  | 1 |
| Power Dissipation | PD |  |  | 80 | W |  | 1 |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 |  | 150 | °C |  | 1 |
| Maximum Temperature for Soldering | TL |  |  | 260 | °C |  | 1 |
| Thermal Resistance, Junction-to-Case | RθJC |  |  | 1.56 | °C/W |  | 1 |
| Drain to Source Breakdown Voltage | V(BR)DSS | -100 |  |  | V | VGS=0V, ID=-250µA | 2 |
| Drain to Source Leakage Current | IDSS |  |  | -1 | µA | VDS=-100V, VGS=0V | 2 |
| Gate to Source Forward Leakage | IGSS(F) |  |  | -100 | nA | VGS=-20V, VDS=0V | 2 |
| Gate to Source Reverse Leakage | IGSS(R) |  |  | 100 | nA | VGS=+20V, VDS=0V | 2 |
| Gate Threshold Voltage | VGS(TH) | -1.5 | -2 | -2.5 | V | VDS=VGS, ID=-250µA | 2 |
| Diode Forward Voltage | VSD |  |  | -1.2 | V | IS=-10A, VGS=0V | 2 |
| Diode Forward Current | IS |  |  | -25 | A | TC=25 °C | 2 |

## CAD (KiCad official)

- Symbol: `LWS1H90A4`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `lws1h90a4-etched.step` / `lws1h90a4-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `lws1h90a4.step` / `lws1h90a4.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Lewa Micro datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8756664146136457216) (10 pp, sha256 `227e216e5315e9f2`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/lws1h90a4-datasheet.pdf)