component
LWS1H90A4
Public Made by Adomby adom
Lewa Micro MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownLWS1H90A4
Lewa Micro · MOSFETs · TO-252
LWS1H90A4 from Lewa Micro, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the P-channel MOSFET, with a maximum gate-to-source voltage of ±20 V. |
| 2 | D | passive | Drain; rated for a drain-to-source voltage of -100 V and a continuous drain current of -25 A at TC=25℃. |
| 3 | S | passive | Source; body diode is connected between drain and source, with a forward voltage of -1.2 V maximum at IS=-10A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Lewa Micro |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | -100 | V | 1 | |||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Pulsed Drain Current | IDM | -100 | A | 1 | |||
| Single pulse avalanche energy | EAS | 200 | mJ | 1 | |||
| Power Dissipation | PD | 80 | W | 1 | |||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Maximum Temperature for Soldering | TL | 260 | °C | 1 | |||
| Thermal Resistance, Junction-to-Case | RθJC | 1.56 | °C/W | 1 | |||
| Drain to Source Breakdown Voltage | V(BR)DSS | -100 | V | VGS=0V, ID=-250µA | 2 | ||
| Drain to Source Leakage Current | IDSS | -1 | µA | VDS=-100V, VGS=0V | 2 | ||
| Gate to Source Forward Leakage | IGSS(F) | -100 | nA | VGS=-20V, VDS=0V | 2 | ||
| Gate to Source Reverse Leakage | IGSS(R) | 100 | nA | VGS=+20V, VDS=0V | 2 | ||
| Gate Threshold Voltage | VGS(TH) | -1.5 | -2 | -2.5 | V | VDS=VGS, ID=-250µA | 2 |
| Diode Forward Voltage | VSD | -1.2 | V | IS=-10A, VGS=0V | 2 | ||
| Diode Forward Current | IS | -25 | A | TC=25 °C | 2 |
CAD (KiCad official)
- Symbol:
LWS1H90A4 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
lws1h90a4-etched.step/lws1h90a4-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);lws1h90a4.step/lws1h90a4.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Lewa Micro datasheet (10 pp, sha256
227e216e5315e9f2, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).