component

LBC850CLT1G

Public Made by Adom

by adom

LRC Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorslbc850clt1gfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
lbc850clt1g / README.md
History Download
Ray lbc850clt1g: specified limits as data (metadata.characteristics, 25 rows from the datasheet) 63f26b8 17d ago

LBC850CLT1G

LRC · Bipolar (BJT) · SOT-23

LBC850CLT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE passive Base terminal of the NPN general-purpose transistor; emitter-base voltage is rated at 6 V (VEBO) and collector current at 100 mA continuous.
2 EMITTER passive Emitter terminal of the NPN transistor; the datasheet rates emitter-base voltage at 6 V (VEBO) and continuous collector current at 100 mA.
3 COLLECTOR passive Collector terminal of the NPN transistor; rated for 45 V collector-emitter (VCEO), 50 V collector-base (VCBO) and 100 mA continuous collector current.

Key specifications

Parameter Value
Manufacturer LRC
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector–Emitter Breakdown Voltage VBR(CEO) 45 V IC = 10 mA 2
Collector–Emitter Breakdown Voltage VBR(CES) 50 V IC = 10 µA, VEB = 0 2
Collector–Base Breakdown Voltage VBR(CBO) 50 V IC = 10 µA 2
Emitter–Base Breakdown Voltage VBR(EBO) 6 V IE = 1.0 µA 2
Collector Cutoff Current ICBO 15 nA VCB = 30 V 2
Collector Cutoff Current ICBO 5 µA VCB = 30 V, TA = 150°C 2
DC Current Gain HFE 420 520 800 IC = 2.0 mA, VCE = 5.0 V 2
Collector–Emitter Saturation Voltage VCE(sat) 0.25 V IC = 10 mA, IB = 0.5 mA 2
Collector–Emitter Saturation Voltage VCE(sat) 0.6 V IC = 100 mA, IB = 5.0 mA 2
Base–Emitter Voltage VBE(on) 580 660 700 mV IC = 2.0 mA, VCE = 5.0 V 2
Base–Emitter Voltage VBE(on) 770 mV IC = 10 mA, VCE = 5.0 V 2
Current–Gain — Bandwidth Product fT 100 MHz IC = 10 mA, VCE = 5.0 V, f = 100 MHz 2
Output Capacitance Cobo 4.5 pF VCB = 10 V, f = 1.0 MHz 2
Noise Figure NF 4 dB IC = 0.2 mA, VCE = 5.0 V, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz 2
Collector–Emitter Voltage VCEO 45 V 1
Collector–Base Voltage VCBO 50 V 1
Emitter–Base Voltage VEBO 6 V 1
Collector Current — Continuous IC 100 mA 1
Total Device Dissipation, FR-5 Board PD 225 mW FR-5 board (Note 1) @ TA = 25ºC 1
Total Device Dissipation, Alumina Substrate PD 300 mW Alumina substrate (Note 2) @ TA = 25ºC 1
Derate above 25ºC, FR-5 Board 1.8 mW/ºC FR-5 board (Note 1), derate above 25ºC 1
Derate above 25ºC, Alumina Substrate 2.4 mW/ºC Alumina substrate (Note 2), derate above 25ºC 1
Thermal Resistance, Junction–to–Ambient, FR-5 Board RΘJA 556 ºC/W FR-5 board (Note 1) 1
Thermal Resistance, Junction–to–Ambient, Alumina Substrate RΘJA 417 ºC/W Alumina substrate (Note 2) 1
Junction and Storage Temperature TJ,Tstg -55 150 ºC 1

CAD (KiCad official)

  • Symbol: LBC850CLT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: lbc850clt1g-etched.step / lbc850clt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); lbc850clt1g.step / lbc850clt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: LRC datasheet (6 pp, sha256 cb0a45599596a26b, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF