component
LBC850CLT1G
Public Made by Adomby adom
LRC Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
← Commit history
lbc850clt1g: specified limits as data (metadata.characteristics, 25 rows from the datasheet)
2 files changed
+340−1
README.md+32@@ -21,6 +21,38 @@ LBC850CLT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from th | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Collector–Emitter Breakdown Voltage | VBR(CEO) | 45 | | | V | IC = 10 mA | 2 |+| Collector–Emitter Breakdown Voltage | VBR(CES) | 50 | | | V | IC = 10 µA, VEB = 0 | 2 |+| Collector–Base Breakdown Voltage | VBR(CBO) | 50 | | | V | IC = 10 µA | 2 |+| Emitter–Base Breakdown Voltage | VBR(EBO) | 6 | | | V | IE = 1.0 µA | 2 |+| Collector Cutoff Current | ICBO | | | 15 | nA | VCB = 30 V | 2 |+| Collector Cutoff Current | ICBO | | | 5 | µA | VCB = 30 V, TA = 150°C | 2 |+| DC Current Gain | HFE | 420 | 520 | 800 | | IC = 2.0 mA, VCE = 5.0 V | 2 |+| Collector–Emitter Saturation Voltage | VCE(sat) | | | 0.25 | V | IC = 10 mA, IB = 0.5 mA | 2 |+| Collector–Emitter Saturation Voltage | VCE(sat) | | | 0.6 | V | IC = 100 mA, IB = 5.0 mA | 2 |+| Base–Emitter Voltage | VBE(on) | 580 | 660 | 700 | mV | IC = 2.0 mA, VCE = 5.0 V | 2 |+| Base–Emitter Voltage | VBE(on) | | | 770 | mV | IC = 10 mA, VCE = 5.0 V | 2 |+| Current–Gain — Bandwidth Product | fT | 100 | | | MHz | IC = 10 mA, VCE = 5.0 V, f = 100 MHz | 2 |+| Output Capacitance | Cobo | | | 4.5 | pF | VCB = 10 V, f = 1.0 MHz | 2 |+| Noise Figure | NF | | | 4 | dB | IC = 0.2 mA, VCE = 5.0 V, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz | 2 |+| Collector–Emitter Voltage | VCEO | | | 45 | V | | 1 |+| Collector–Base Voltage | VCBO | | | 50 | V | | 1 |+| Emitter–Base Voltage | VEBO | | | 6 | V | | 1 |+| Collector Current — Continuous | IC | | | 100 | mA | | 1 |+| Total Device Dissipation, FR-5 Board | PD | | | 225 | mW | FR-5 board (Note 1) @ TA = 25ºC | 1 |+| Total Device Dissipation, Alumina Substrate | PD | | | 300 | mW | Alumina substrate (Note 2) @ TA = 25ºC | 1 |+| Derate above 25ºC, FR-5 Board | | | 1.8 | | mW/ºC | FR-5 board (Note 1), derate above 25ºC | 1 |+| Derate above 25ºC, Alumina Substrate | | | 2.4 | | mW/ºC | Alumina substrate (Note 2), derate above 25ºC | 1 |+| Thermal Resistance, Junction–to–Ambient, FR-5 Board | RΘJA | | 556 | | ºC/W | FR-5 board (Note 1) | 1 |+| Thermal Resistance, Junction–to–Ambient, Alumina Substrate | RΘJA | | 417 | | ºC/W | Alumina substrate (Note 2) | 1 |+| Junction and Storage Temperature | TJ,Tstg | -55 | | 150 | ºC | | 1 |+ ## CAD (KiCad official) - Symbol: `LBC850CLT1G`
page.json+308−1@@ -147,6 +147,313 @@ "Package": "SOT-23", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "cb0a45599596a26b",+ "rows": [+ {+ "name": "Collector–Emitter Breakdown Voltage",+ "symbol": "VBR(CEO)",+ "kind": "electrical",+ "unit": "V",+ "min": 45,+ "typ": null,+ "max": null,+ "conditions": "IC = 10 mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector–Emitter Breakdown Voltage",+ "symbol": "VBR(CES)",+ "kind": "electrical",+ "unit": "V",+ "min": 50,+ "typ": null,+ "max": null,+ "conditions": "IC = 10 µA, VEB = 0",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector–Base Breakdown Voltage",+ "symbol": "VBR(CBO)",+ "kind": "electrical",+ "unit": "V",+ "min": 50,+ "typ": null,+ "max": null,+ "conditions": "IC = 10 µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Emitter–Base Breakdown Voltage",+ "symbol": "VBR(EBO)",+ "kind": "electrical",+ "unit": "V",+ "min": 6,+ "typ": null,+ "max": null,+ "conditions": "IE = 1.0 µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector Cutoff Current",+ "symbol": "ICBO",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 15,+ "conditions": "VCB = 30 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector Cutoff Current",+ "symbol": "ICBO",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "VCB = 30 V, TA = 150°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "DC Current Gain",+ "symbol": "HFE",+ "kind": "electrical",+ "unit": "",+ "min": 420,+ "typ": 520,+ "max": 800,+ "conditions": "IC = 2.0 mA, VCE = 5.0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector–Emitter Saturation Voltage",+ "symbol": "VCE(sat)",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 0.25,+ "conditions": "IC = 10 mA, IB = 0.5 mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector–Emitter Saturation Voltage",+ "symbol": "VCE(sat)",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 0.6,+ "conditions": "IC = 100 mA, IB = 5.0 mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Base–Emitter Voltage",+ "symbol": "VBE(on)",+ "kind": "electrical",+ "unit": "mV",+ "min": 580,+ "typ": 660,+ "max": 700,+ "conditions": "IC = 2.0 mA, VCE = 5.0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Base–Emitter Voltage",+ "symbol": "VBE(on)",+ "kind": "electrical",+ "unit": "mV",+ "min": null,+ "typ": null,+ "max": 770,+ "conditions": "IC = 10 mA, VCE = 5.0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Current–Gain — Bandwidth Product",+ "symbol": "fT",+ "kind": "electrical",+ "unit": "MHz",+ "min": 100,+ "typ": null,+ "max": null,+ "conditions": "IC = 10 mA, VCE = 5.0 V, f = 100 MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Output Capacitance",+ "symbol": "Cobo",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": null,+ "max": 4.5,+ "conditions": "VCB = 10 V, f = 1.0 MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Noise Figure",+ "symbol": "NF",+ "kind": "electrical",+ "unit": "dB",+ "min": null,+ "typ": null,+ "max": 4,+ "conditions": "IC = 0.2 mA, VCE = 5.0 V, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector–Emitter Voltage",+ "symbol": "VCEO",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 45,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Collector–Base Voltage",+ "symbol": "VCBO",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Emitter–Base Voltage",+ "symbol": "VEBO",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 6,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Collector Current — Continuous",+ "symbol": "IC",+ "kind": "absolute_maximum",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Total Device Dissipation, FR-5 Board",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "mW",+ "min": null,+ "typ": null,+ "max": 225,+ "conditions": "FR-5 board (Note 1) @ TA = 25ºC",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Total Device Dissipation, Alumina Substrate",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "mW",+ "min": null,+ "typ": null,+ "max": 300,+ "conditions": "Alumina substrate (Note 2) @ TA = 25ºC",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Derate above 25ºC, FR-5 Board",+ "symbol": "",+ "kind": "thermal",+ "unit": "mW/ºC",+ "min": null,+ "typ": 1.8,+ "max": null,+ "conditions": "FR-5 board (Note 1), derate above 25ºC",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Derate above 25ºC, Alumina Substrate",+ "symbol": "",+ "kind": "thermal",+ "unit": "mW/ºC",+ "min": null,+ "typ": 2.4,+ "max": null,+ "conditions": "Alumina substrate (Note 2), derate above 25ºC",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction–to–Ambient, FR-5 Board",+ "symbol": "RΘJA",+ "kind": "thermal",+ "unit": "ºC/W",+ "min": null,+ "typ": 556,+ "max": null,+ "conditions": "FR-5 board (Note 1)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction–to–Ambient, Alumina Substrate",+ "symbol": "RΘJA",+ "kind": "thermal",+ "unit": "ºC/W",+ "min": null,+ "typ": 417,+ "max": null,+ "conditions": "Alumina substrate (Note 2)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction and Storage Temperature",+ "symbol": "TJ,Tstg",+ "kind": "absolute_maximum",+ "unit": "ºC",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -188,4 +495,4 @@ "visibility": { "public": true }-}+}