component
L2N7002SLT1G
Public Made by Adomby adom
LRC MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
Ray
l2n7002slt1g: specified limits as data (metadata.characteristics, 21 rows from the datasheet)
f3dc70e
16d ago
L2N7002SLT1G
LRC · MOSFETs · SOT-23
L2N7002SLT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate of the N-channel MOSFET, ESD protected to 2000 V HBM, with VGS limited to ±20 V and threshold VGS(th) of 1.0 V min to 2.0 V (VDS = VGS, ID = 250 µA). |
| 2 | Source | passive | Source of the N-channel MOSFET, also the body-diode anode, with continuous source current (body diode) IS rated 300 mA. |
| 3 | Drain | passive | Drain of the N-channel MOSFET with VDSS of 60 V, ID of 320 mA steady state at TA = 25°C, and 1.5 A pulsed (tp = 10 µs). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | LRC |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain–Source Voltage | VDSS | 60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current, steady state | ID | 320 | mA | Steady state, TA = 25°C | 1 | ||
| Drain Current, steady state | ID | 230 | mA | Steady state, TA = 85°C | 1 | ||
| Drain Current, t<5s | ID | 380 | mA | t<5s, TA = 25°C | 1 | ||
| Drain Current, t<5s | ID | 270 | mA | t<5s, TA = 85°C | 1 | ||
| Pulsed Drain Current | IDM | 1.5 | A | tp = 10μs | 1 | ||
| Source Current (Body Diode) | IS | 300 | mA | 1 | |||
| Total Device Dissipation, steady state | PD | 300 | mW | Steady state | 2 | ||
| Total Device Dissipation, t<5s | PD | 420 | mW | t<5s | 2 | ||
| Junction-to-Ambient Thermal Resistance, steady state | RΘJA | 417 | ºC/W | Steady state | 2 | ||
| Junction-to-Ambient Thermal Resistance, t<5s | RΘJA | 300 | ºC/W | t<5s | 2 | ||
| Junction and Storage Temperature | TJ,Tstg | -55 | 150 | ºC | 2 | ||
| Lead Temperature for Soldering Purposes | TL | 260 | ºC | 1/8 in from case for 10 s | 2 | ||
| Gate–Source ESD Rating (HBM, Method 3015) | 2000 | V | HBM, Method 3015 | 2 | |||
| Drain–Source Breakdown Voltage | VBRDSS | 60 | V | VGS = 0, ID = 250 μA | 2 | ||
| Zero Gate Voltage Drain Current, TJ = 25°C | IDSS | 1 | μA | VGS = 0, VDS = 60 V | 2 | ||
| Forward Transconductance | gfs | 80 | mS | VDS = 5.0 V, ID = 200 mA | 2 | ||
| Input Capacitance | Ciss | 35 | pF | VDS = 25 V, VGS = 0, f = 1.0 MHz | 2 | ||
| Output Capacitance | Coss | 10 | pF | VDS = 25 V, VGS = 0, f = 1.0 MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 5 | pF | VDS = 25 V, VGS = 0, f = 1.0 MHz | 2 |
CAD (KiCad official)
- Symbol:
L2N7002SLT1G - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
l2n7002slt1g-etched.step/l2n7002slt1g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);l2n7002slt1g.step/l2n7002slt1g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: LRC datasheet (6 pp, sha256
d553457dda5c662f, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# L2N7002SLT1G
**LRC** · MOSFETs · SOT-23
L2N7002SLT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate of the N-channel MOSFET, ESD protected to 2000 V HBM, with VGS limited to ±20 V and threshold VGS(th) of 1.0 V min to 2.0 V (VDS = VGS, ID = 250 µA). |
| 2 | Source | passive | Source of the N-channel MOSFET, also the body-diode anode, with continuous source current (body diode) IS rated 300 mA. |
| 3 | Drain | passive | Drain of the N-channel MOSFET with VDSS of 60 V, ID of 320 mA steady state at TA = 25°C, and 1.5 A pulsed (tp = 10 µs). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | LRC |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain–Source Voltage | VDSS | | | 60 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Drain Current, steady state | ID | | | 320 | mA | Steady state, TA = 25°C | 1 |
| Drain Current, steady state | ID | | | 230 | mA | Steady state, TA = 85°C | 1 |
| Drain Current, t<5s | ID | | | 380 | mA | t<5s, TA = 25°C | 1 |
| Drain Current, t<5s | ID | | | 270 | mA | t<5s, TA = 85°C | 1 |
| Pulsed Drain Current | IDM | | | 1.5 | A | tp = 10μs | 1 |
| Source Current (Body Diode) | IS | | | 300 | mA | | 1 |
| Total Device Dissipation, steady state | PD | | | 300 | mW | Steady state | 2 |
| Total Device Dissipation, t<5s | PD | | | 420 | mW | t<5s | 2 |
| Junction-to-Ambient Thermal Resistance, steady state | RΘJA | | | 417 | ºC/W | Steady state | 2 |
| Junction-to-Ambient Thermal Resistance, t<5s | RΘJA | | | 300 | ºC/W | t<5s | 2 |
| Junction and Storage Temperature | TJ,Tstg | -55 | | 150 | ºC | | 2 |
| Lead Temperature for Soldering Purposes | TL | | | 260 | ºC | 1/8 in from case for 10 s | 2 |
| Gate–Source ESD Rating (HBM, Method 3015) | | | | 2000 | V | HBM, Method 3015 | 2 |
| Drain–Source Breakdown Voltage | VBRDSS | 60 | | | V | VGS = 0, ID = 250 μA | 2 |
| Zero Gate Voltage Drain Current, TJ = 25°C | IDSS | | | 1 | μA | VGS = 0, VDS = 60 V | 2 |
| Forward Transconductance | gfs | 80 | | | mS | VDS = 5.0 V, ID = 200 mA | 2 |
| Input Capacitance | Ciss | | | 35 | pF | VDS = 25 V, VGS = 0, f = 1.0 MHz | 2 |
| Output Capacitance | Coss | | | 10 | pF | VDS = 25 V, VGS = 0, f = 1.0 MHz | 2 |
| Reverse Transfer Capacitance | Crss | | | 5 | pF | VDS = 25 V, VGS = 0, f = 1.0 MHz | 2 |
## CAD (KiCad official)
- Symbol: `L2N7002SLT1G`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `l2n7002slt1g-etched.step` / `l2n7002slt1g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `l2n7002slt1g.step` / `l2n7002slt1g.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [LRC datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588884452839723008) (6 pp, sha256 `d553457dda5c662f`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/l2n7002slt1g-datasheet.pdf)