component
L2N7002SLT1G
Public Made by Adomby adom
LRC MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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l2n7002slt1g: specified limits as data (metadata.characteristics, 21 rows from the datasheet)
2 files changed
+288−1
README.md+28@@ -21,6 +21,34 @@ L2N7002SLT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from t | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain–Source Voltage | VDSS | | | 60 | V | | 1 |+| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |+| Drain Current, steady state | ID | | | 320 | mA | Steady state, TA = 25°C | 1 |+| Drain Current, steady state | ID | | | 230 | mA | Steady state, TA = 85°C | 1 |+| Drain Current, t<5s | ID | | | 380 | mA | t<5s, TA = 25°C | 1 |+| Drain Current, t<5s | ID | | | 270 | mA | t<5s, TA = 85°C | 1 |+| Pulsed Drain Current | IDM | | | 1.5 | A | tp = 10μs | 1 |+| Source Current (Body Diode) | IS | | | 300 | mA | | 1 |+| Total Device Dissipation, steady state | PD | | | 300 | mW | Steady state | 2 |+| Total Device Dissipation, t<5s | PD | | | 420 | mW | t<5s | 2 |+| Junction-to-Ambient Thermal Resistance, steady state | RΘJA | | | 417 | ºC/W | Steady state | 2 |+| Junction-to-Ambient Thermal Resistance, t<5s | RΘJA | | | 300 | ºC/W | t<5s | 2 |+| Junction and Storage Temperature | TJ,Tstg | -55 | | 150 | ºC | | 2 |+| Lead Temperature for Soldering Purposes | TL | | | 260 | ºC | 1/8 in from case for 10 s | 2 |+| Gate–Source ESD Rating (HBM, Method 3015) | | | | 2000 | V | HBM, Method 3015 | 2 |+| Drain–Source Breakdown Voltage | VBRDSS | 60 | | | V | VGS = 0, ID = 250 μA | 2 |+| Zero Gate Voltage Drain Current, TJ = 25°C | IDSS | | | 1 | μA | VGS = 0, VDS = 60 V | 2 |+| Forward Transconductance | gfs | 80 | | | mS | VDS = 5.0 V, ID = 200 mA | 2 |+| Input Capacitance | Ciss | | | 35 | pF | VDS = 25 V, VGS = 0, f = 1.0 MHz | 2 |+| Output Capacitance | Coss | | | 10 | pF | VDS = 25 V, VGS = 0, f = 1.0 MHz | 2 |+| Reverse Transfer Capacitance | Crss | | | 5 | pF | VDS = 25 V, VGS = 0, f = 1.0 MHz | 2 |+ ## CAD (KiCad official) - Symbol: `L2N7002SLT1G`
page.json+260−1@@ -148,6 +148,265 @@ "Package": "SOT-23", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "d553457dda5c662f",+ "rows": [+ {+ "name": "Drain–Source Voltage",+ "symbol": "VDSS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 60,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain Current, steady state",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 320,+ "conditions": "Steady state, TA = 25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain Current, steady state",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 230,+ "conditions": "Steady state, TA = 85°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain Current, t<5s",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 380,+ "conditions": "t<5s, TA = 25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain Current, t<5s",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 270,+ "conditions": "t<5s, TA = 85°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 1.5,+ "conditions": "tp = 10μs",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Source Current (Body Diode)",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 300,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Total Device Dissipation, steady state",+ "symbol": "PD",+ "kind": "thermal",+ "unit": "mW",+ "min": null,+ "typ": null,+ "max": 300,+ "conditions": "Steady state",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Device Dissipation, t<5s",+ "symbol": "PD",+ "kind": "thermal",+ "unit": "mW",+ "min": null,+ "typ": null,+ "max": 420,+ "conditions": "t<5s",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-Ambient Thermal Resistance, steady state",+ "symbol": "RΘJA",+ "kind": "thermal",+ "unit": "ºC/W",+ "min": null,+ "typ": null,+ "max": 417,+ "conditions": "Steady state",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-Ambient Thermal Resistance, t<5s",+ "symbol": "RΘJA",+ "kind": "thermal",+ "unit": "ºC/W",+ "min": null,+ "typ": null,+ "max": 300,+ "conditions": "t<5s",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Junction and Storage Temperature",+ "symbol": "TJ,Tstg",+ "kind": "absolute_maximum",+ "unit": "ºC",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Lead Temperature for Soldering Purposes",+ "symbol": "TL",+ "kind": "absolute_maximum",+ "unit": "ºC",+ "min": null,+ "typ": null,+ "max": 260,+ "conditions": "1/8 in from case for 10 s",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate–Source ESD Rating (HBM, Method 3015)",+ "symbol": "",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 2000,+ "conditions": "HBM, Method 3015",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain–Source Breakdown Voltage",+ "symbol": "VBRDSS",+ "kind": "electrical",+ "unit": "V",+ "min": 60,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0, ID = 250 μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current, TJ = 25°C",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VGS = 0, VDS = 60 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Forward Transconductance",+ "symbol": "gfs",+ "kind": "electrical",+ "unit": "mS",+ "min": 80,+ "typ": null,+ "max": null,+ "conditions": "VDS = 5.0 V, ID = 200 mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Input Capacitance",+ "symbol": "Ciss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": null,+ "max": 35,+ "conditions": "VDS = 25 V, VGS = 0, f = 1.0 MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Output Capacitance",+ "symbol": "Coss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": null,+ "max": 10,+ "conditions": "VDS = 25 V, VGS = 0, f = 1.0 MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Transfer Capacitance",+ "symbol": "Crss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "VDS = 25 V, VGS = 0, f = 1.0 MHz",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -189,4 +448,4 @@ "visibility": { "public": true }-}+}