# KTC4379Y

**Changjing** · Bipolar (BJT) · SOT-89-3L

KTC4379Y from Changjing, in a SOT-89-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the NPN transistor, which the datasheet tests at IB=50mA for saturation with IC=1A and rates with an emitter-base voltage (VEBO) of 5 V. |
| 2 | COLLECTOR | passive | Collector terminal of the NPN transistor, rated for a collector-base voltage (VCBO) of 50 V, a collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 2 A. |
| 3 | EMITTER | passive | Emitter terminal of the NPN transistor, with emitter-base breakdown voltage V(BR)EBO listed at 5 V for IE=1mA. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | SOT-89-3L |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-emitter saturation voltage | VCE(sat) |  |  | 0.5 | V | IC=1A, IB=50mA | 1 |
| Base-emitter saturation voltage | VBE(sat) |  |  | 1.2 | V | IC=1A, IB=50mA | 1 |
| Collector cut-off current | ICBO |  |  | 0.1 | μA | VCB=50V, IE=0 | 1 |
| Emitter cut-off current | IEBO |  |  | 0.1 | μA | VEB=5V, IC=0 | 1 |
| Collector output capacitance | Cob |  |  | 30 | pF | VCB=10V, IE=0, f=1MHz | 1 |
| DC current gain hFE(1) | hFE(1) | 70 |  | 240 |  | VCE=2V, IC=500mA | 1 |
| DC current gain hFE(2) | hFE(2) | 40 |  |  |  | VCE=2V, IC=1.5A | 1 |
| DC current gain rank Y | hFE(1) | 120 |  | 240 |  | CLASSIFICATION OF hFE(1), rank Y | 1 |
| Transition frequency | fT | 120 |  |  | MHz | VCE=2V, IC=500mA | 1 |
| Collector-base breakdown voltage | V(BR)CBO | 50 |  |  | V | IC=1mA, IE=0 | 1 |
| Collector-emitter breakdown voltage | V(BR)CEO | 50 |  |  | V | IC=10mA, IB=0 | 1 |
| Emitter-base breakdown voltage | V(BR)EBO | 5 |  |  | V | IE=1mA, IC=0 | 1 |
| Turn on time | ton |  | 0.1 |  | μs | VCC=30V, IC=1A, IB1=-IB2=-0.05A | 1 |
| Storage time | tstg |  | 1 |  | μs | VCC=30V, IC=1A, IB1=-IB2=-0.05A | 1 |
| Fall time | tf |  | 0.1 |  | μs | VCC=30V, IC=1A, IB1=-IB2=-0.05A | 1 |
| Collector-base voltage | VCBO |  |  | 50 | V | Ta=25℃ unless otherwise noted | 1 |
| Collector-emitter voltage | VCEO |  |  | 50 | V | Ta=25℃ unless otherwise noted | 1 |
| Emitter-base voltage | VEBO |  |  | 5 | V | Ta=25℃ unless otherwise noted | 1 |
| Collector current -Continuous | IC |  |  | 2 | A | Ta=25℃ unless otherwise noted | 1 |
| Collector power dissipation | PC |  |  | 500 | mW | Ta=25℃ unless otherwise noted | 1 |
| Operation junction and storage temperature range | TJ,Tstg | -55 |  | 150 | ℃ | Ta=25℃ unless otherwise noted | 1 |

## CAD (KiCad official)

- Symbol: `KTC4379Y`
- Footprint: `Package_TO_SOT_SMD:SOT-89-3`
- 3D model: SOT-89-3L (KiCad packages3D, STEP)
- 3D model files: `ktc4379y-etched.step` / `ktc4379y-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ktc4379y.step` / `ktc4379y.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Changjing datasheet](docs/ktc4379y-datasheet.pdf) (4 pp, sha256 `dc4b27624cf973cd`, retrieved 2026-10-28, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `off` (skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ktc4379y-datasheet.pdf)