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KTC4379Y

Public Made by Adom

by adom

Changjing Bipolar (BJT), SOT-89-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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KTC4379Y

Changjing · Bipolar (BJT) · SOT-89-3L

KTC4379Y from Changjing, in a SOT-89-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the NPN transistor, which the datasheet tests at IB=50mA for saturation with IC=1A and rates with an emitter-base voltage (VEBO) of 5 V.
2 COLLECTOR passive Collector terminal of the NPN transistor, rated for a collector-base voltage (VCBO) of 50 V, a collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 2 A.
3 EMITTER passive Emitter terminal of the NPN transistor, with emitter-base breakdown voltage V(BR)EBO listed at 5 V for IE=1mA.

Key specifications

Parameter Value
Manufacturer Changjing
Package SOT-89-3L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-emitter saturation voltage VCE(sat) 0.5 V IC=1A, IB=50mA 1
Base-emitter saturation voltage VBE(sat) 1.2 V IC=1A, IB=50mA 1
Collector cut-off current ICBO 0.1 μA VCB=50V, IE=0 1
Emitter cut-off current IEBO 0.1 μA VEB=5V, IC=0 1
Collector output capacitance Cob 30 pF VCB=10V, IE=0, f=1MHz 1
DC current gain hFE(1) hFE(1) 70 240 VCE=2V, IC=500mA 1
DC current gain hFE(2) hFE(2) 40 VCE=2V, IC=1.5A 1
DC current gain rank Y hFE(1) 120 240 CLASSIFICATION OF hFE(1), rank Y 1
Transition frequency fT 120 MHz VCE=2V, IC=500mA 1
Collector-base breakdown voltage V(BR)CBO 50 V IC=1mA, IE=0 1
Collector-emitter breakdown voltage V(BR)CEO 50 V IC=10mA, IB=0 1
Emitter-base breakdown voltage V(BR)EBO 5 V IE=1mA, IC=0 1
Turn on time ton 0.1 μs VCC=30V, IC=1A, IB1=-IB2=-0.05A 1
Storage time tstg 1 μs VCC=30V, IC=1A, IB1=-IB2=-0.05A 1
Fall time tf 0.1 μs VCC=30V, IC=1A, IB1=-IB2=-0.05A 1
Collector-base voltage VCBO 50 V Ta=25℃ unless otherwise noted 1
Collector-emitter voltage VCEO 50 V Ta=25℃ unless otherwise noted 1
Emitter-base voltage VEBO 5 V Ta=25℃ unless otherwise noted 1
Collector current -Continuous IC 2 A Ta=25℃ unless otherwise noted 1
Collector power dissipation PC 500 mW Ta=25℃ unless otherwise noted 1
Operation junction and storage temperature range TJ,Tstg -55 150 ℃ Ta=25℃ unless otherwise noted 1

CAD (KiCad official)

  • Symbol: KTC4379Y
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89-3L (KiCad packages3D, STEP)
  • 3D model files: ktc4379y-etched.step / ktc4379y-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ktc4379y.step / ktc4379y.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Changjing datasheet (4 pp, sha256 dc4b27624cf973cd, retrieved 2026-10-28, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus off (skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF