component
KTC4379Y
Public Made by Adomby adom
Changjing Bipolar (BJT), SOT-89-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownKTC4379Y
Changjing · Bipolar (BJT) · SOT-89-3L
KTC4379Y from Changjing, in a SOT-89-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the NPN transistor, which the datasheet tests at IB=50mA for saturation with IC=1A and rates with an emitter-base voltage (VEBO) of 5 V. |
| 2 | COLLECTOR | passive | Collector terminal of the NPN transistor, rated for a collector-base voltage (VCBO) of 50 V, a collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 2 A. |
| 3 | EMITTER | passive | Emitter terminal of the NPN transistor, with emitter-base breakdown voltage V(BR)EBO listed at 5 V for IE=1mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | SOT-89-3L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-emitter saturation voltage | VCE(sat) | 0.5 | V | IC=1A, IB=50mA | 1 | ||
| Base-emitter saturation voltage | VBE(sat) | 1.2 | V | IC=1A, IB=50mA | 1 | ||
| Collector cut-off current | ICBO | 0.1 | μA | VCB=50V, IE=0 | 1 | ||
| Emitter cut-off current | IEBO | 0.1 | μA | VEB=5V, IC=0 | 1 | ||
| Collector output capacitance | Cob | 30 | pF | VCB=10V, IE=0, f=1MHz | 1 | ||
| DC current gain hFE(1) | hFE(1) | 70 | 240 | VCE=2V, IC=500mA | 1 | ||
| DC current gain hFE(2) | hFE(2) | 40 | VCE=2V, IC=1.5A | 1 | |||
| DC current gain rank Y | hFE(1) | 120 | 240 | CLASSIFICATION OF hFE(1), rank Y | 1 | ||
| Transition frequency | fT | 120 | MHz | VCE=2V, IC=500mA | 1 | ||
| Collector-base breakdown voltage | V(BR)CBO | 50 | V | IC=1mA, IE=0 | 1 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | 50 | V | IC=10mA, IB=0 | 1 | ||
| Emitter-base breakdown voltage | V(BR)EBO | 5 | V | IE=1mA, IC=0 | 1 | ||
| Turn on time | ton | 0.1 | μs | VCC=30V, IC=1A, IB1=-IB2=-0.05A | 1 | ||
| Storage time | tstg | 1 | μs | VCC=30V, IC=1A, IB1=-IB2=-0.05A | 1 | ||
| Fall time | tf | 0.1 | μs | VCC=30V, IC=1A, IB1=-IB2=-0.05A | 1 | ||
| Collector-base voltage | VCBO | 50 | V | Ta=25℃ unless otherwise noted | 1 | ||
| Collector-emitter voltage | VCEO | 50 | V | Ta=25℃ unless otherwise noted | 1 | ||
| Emitter-base voltage | VEBO | 5 | V | Ta=25℃ unless otherwise noted | 1 | ||
| Collector current -Continuous | IC | 2 | A | Ta=25℃ unless otherwise noted | 1 | ||
| Collector power dissipation | PC | 500 | mW | Ta=25℃ unless otherwise noted | 1 | ||
| Operation junction and storage temperature range | TJ,Tstg | -55 | 150 | ℃ | Ta=25℃ unless otherwise noted | 1 |
CAD (KiCad official)
- Symbol:
KTC4379Y - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89-3L (KiCad packages3D, STEP)
- 3D model files:
ktc4379y-etched.step/ktc4379y-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ktc4379y.step/ktc4379y.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Changjing datasheet (4 pp, sha256
dc4b27624cf973cd, retrieved 2026-10-28, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusoff(skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).