# IRFR3910TR

**UMW** · MOSFETs · TO-252

IRFR3910TR from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-to-source voltage limited to ±20 V (VGS), with VGS(th) of 2 to 4 V. |
| 2 | D | passive | Drain; 100 V drain-to-source breakdown, 16 A continuous drain current at TC=25°C. |
| 3 | S | passive | Source; 16 A continuous body-diode source current and 60 A pulsed. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-252 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous Drain Current | ID |  |  | 16 | A | VGS=10V, TC=25°C | 1 |
| Continuous Drain Current | ID |  |  | 12 | A | VGS=10V, TC=100°C | 1 |
| Pulsed Drain Current | IDM |  |  | 60 | A |  | 1 |
| Power Dissipation | PD |  |  | 79 | W | TC=25°C | 1 |
| Linear Derating Factor |  |  |  | 0.53 | W/°C |  | 1 |
| Gate-to-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 150 | mJ |  | 1 |
| Avalanche Current | IAR |  |  | 9 | A |  | 1 |
| Repetitive Avalanche Energy | EAR |  |  | 7.9 | mJ |  | 1 |
| Peak Diode Recovery dv/dt | dv/dt |  |  | 5 | V/ns |  | 1 |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 |  | 175 | °C |  | 1 |
| Soldering Temperature |  |  |  | 300 | °C | for 10 seconds, 1.6mm from case | 1 |
| Junction-to-Case Thermal Resistance | RθJC |  |  | 1.9 | °C/W |  | 2 |
| Junction-to-Ambient (PCB Mount) Thermal Resistance | RθJA |  |  | 50 | °C/W | PCB mount | 2 |
| Junction-to-Ambient Thermal Resistance | RθJA |  |  | 110 | °C/W |  | 2 |
| Drain-to-Source Breakdown Voltage | V(BR)DSS | 100 |  |  | V | ID=250µA, VGS=0V | 3 |
| Breakdown Voltage Temp. Coefficient | ΔV(BR)DSS/ΔTJ |  | 0.12 |  | V/°C | ID=1mA, Reference to 25°C | 3 |
| Static Drain-to-Source On-Resistance | RDS(ON) |  |  | 115 | mΩ | VGS=10V, ID=10A | 3 |
| Gate Threshold Voltage | VGS(th) | 2 |  | 4 | V | VDS=VGS, ID=250μA | 3 |
| Forward Transconductance | gFS | 6.4 |  |  | S | VDS=50V, ID=9A | 3 |
| Drain-to-Source Leakage Current | IDSS |  |  | 25 | µA | VDS=100V, VGS=0V | 3 |
| Drain-to-Source Leakage Current | IDSS |  |  | 250 | µA | VDS=80V, VGS=0V, TJ=150°C | 3 |
| Gate-to-Source Forward Leakage | IGSS |  |  | 100 | nA | VGS=20V | 3 |
| Gate-to-Source Reverse Leakage | IGSS | -100 |  |  | nA | VGS=-20V | 3 |
| Total Gate Charge | Qg |  |  | 44 | nC | ID=9A, VDS=80V, VGS=10V | 3 |
| Gate-to-Source Charge | Qgs |  | 6.2 |  | nC | ID=9A, VDS=80V, VGS=10V | 3 |
| Gate-to-Drain (Miller) Charge | Qgd |  | 21 |  | nC | ID=9A, VDS=80V, VGS=10V | 3 |
| Turn-On Delay Time | tD(on) |  | 6.4 |  | ns | VDD=50V, ID=9A, RG=12Ω, RD=5.5Ω | 3 |
| Rise Time | tr |  | 27 |  | ns | VDD=50V, ID=9A, RG=12Ω, RD=5.5Ω | 3 |
| Turn-Off Delay Time | tD(off) |  | 37 |  | ns | VDD=50V, ID=9A, RG=12Ω, RD=5.5Ω | 3 |
| Fall Time | tf |  | 25 |  | ns | VDD=50V, ID=9A, RG=12Ω, RD=5.5Ω | 3 |
| Internal Drain Inductance | LD |  | 4.5 |  | nH | Between lead, 6mm (0.25in.) from package and center of die contact | 3 |
| Internal Source Inductance | LS |  | 7.5 |  | nH | Between lead, 6mm (0.25in.) from package and center of die contact | 3 |
| Input Capacitance | Ciss |  | 640 |  | pF | VGS=0V, VDS=25V, ƒ=1MHz | 3 |
| Output Capacitance | Coss |  | 160 |  | pF | VGS=0V, VDS=25V, ƒ=1MHz | 3 |
| Reverse Transfer Capacitance | Crss |  | 88 |  | pF | VGS=0V, VDS=25V, ƒ=1MHz | 3 |
| Continuous Source Current (Body Diode) | IS |  |  | 16 | A |  | 4 |
| Pulsed Source Current (Body Diode) | ISM |  |  | 60 | A |  | 4 |
| Diode Forward Voltage | VSD |  |  | 1.3 | V | TJ=25°C, IS=9A, VGS=0V | 4 |
| Reverse Recovery Time | trr |  | 130 | 190 | ns | TJ=25°C, IF=9A, dI/dt=100A/μs | 4 |
| Reverse Recovery Charge | Qrr |  | 650 | 970 | nC | TJ=25°C, IF=9A, dI/dt=100A/μs | 4 |

## CAD (KiCad official)

- Symbol: `IRFR3910TR`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `irfr3910tr-etched.step` / `irfr3910tr-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irfr3910tr.step` / `irfr3910tr.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [UMW datasheet](docs/irfr3910tr-datasheet.pdf) (11 pp, sha256 `8c7aac28b733d07e`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/irfr3910tr-datasheet.pdf)