component

IRFR3910TR

Public Made by Adom

by adom

UMW MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistorirfr3910trfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 8d ago
viewers irfr3910tr: viewers · Ray 8d ago
irfr3910tr-etched.glb Publish 0.1.0 · Ray 8d ago
irfr3910tr-etched.step irfr3910tr: factory component page (tier=lcsc) · Ray 8d ago
irfr3910tr-hero.glb irfr3910tr: hero GLB from the etched model (keeps the MPN mark) · Ray 8d ago
irfr3910tr-hero.overlay.json Publish 0.1.0 · Ray 8d ago
irfr3910tr.glb Publish 0.1.0 · Ray 8d ago
irfr3910tr.kicad_mod Publish 0.1.0 · Ray 8d ago
irfr3910tr.kicad_sym Publish 0.1.0 · Ray 8d ago
irfr3910tr.lbr Publish 0.1.0 · Ray 8d ago
irfr3910tr.step Publish 0.1.0 · Ray 8d ago
package.json Publish 0.1.0 · Ray 8d ago
page.json Set visibility: public · Ray 8d ago
README.md Publish 0.1.0 · Ray 8d ago

IRFR3910TR

UMW · MOSFETs · TO-252

IRFR3910TR from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-to-source voltage limited to ±20 V (VGS), with VGS(th) of 2 to 4 V.
2 D passive Drain; 100 V drain-to-source breakdown, 16 A continuous drain current at TC=25°C.
3 S passive Source; 16 A continuous body-diode source current and 60 A pulsed.

Key specifications

Parameter Value
Manufacturer UMW
Package TO-252
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous Drain Current ID 16 A VGS=10V, TC=25°C 1
Continuous Drain Current ID 12 A VGS=10V, TC=100°C 1
Pulsed Drain Current IDM 60 A 1
Power Dissipation PD 79 W TC=25°C 1
Linear Derating Factor 0.53 W/°C 1
Gate-to-Source Voltage VGS -20 20 V 1
Single Pulse Avalanche Energy EAS 150 mJ 1
Avalanche Current IAR 9 A 1
Repetitive Avalanche Energy EAR 7.9 mJ 1
Peak Diode Recovery dv/dt dv/dt 5 V/ns 1
Operating Junction and Storage Temperature Range TJ, TSTG -55 175 °C 1
Soldering Temperature 300 °C for 10 seconds, 1.6mm from case 1
Junction-to-Case Thermal Resistance RθJC 1.9 °C/W 2
Junction-to-Ambient (PCB Mount) Thermal Resistance RθJA 50 °C/W PCB mount 2
Junction-to-Ambient Thermal Resistance RθJA 110 °C/W 2
Drain-to-Source Breakdown Voltage V(BR)DSS 100 V ID=250µA, VGS=0V 3
Breakdown Voltage Temp. Coefficient ΔV(BR)DSS/ΔTJ 0.12 V/°C ID=1mA, Reference to 25°C 3
Static Drain-to-Source On-Resistance RDS(ON) 115 mΩ VGS=10V, ID=10A 3
Gate Threshold Voltage VGS(th) 2 4 V VDS=VGS, ID=250μA 3
Forward Transconductance gFS 6.4 S VDS=50V, ID=9A 3
Drain-to-Source Leakage Current IDSS 25 µA VDS=100V, VGS=0V 3
Drain-to-Source Leakage Current IDSS 250 µA VDS=80V, VGS=0V, TJ=150°C 3
Gate-to-Source Forward Leakage IGSS 100 nA VGS=20V 3
Gate-to-Source Reverse Leakage IGSS -100 nA VGS=-20V 3
Total Gate Charge Qg 44 nC ID=9A, VDS=80V, VGS=10V 3
Gate-to-Source Charge Qgs 6.2 nC ID=9A, VDS=80V, VGS=10V 3
Gate-to-Drain (Miller) Charge Qgd 21 nC ID=9A, VDS=80V, VGS=10V 3
Turn-On Delay Time tD(on) 6.4 ns VDD=50V, ID=9A, RG=12Ω, RD=5.5Ω 3
Rise Time tr 27 ns VDD=50V, ID=9A, RG=12Ω, RD=5.5Ω 3
Turn-Off Delay Time tD(off) 37 ns VDD=50V, ID=9A, RG=12Ω, RD=5.5Ω 3
Fall Time tf 25 ns VDD=50V, ID=9A, RG=12Ω, RD=5.5Ω 3
Internal Drain Inductance LD 4.5 nH Between lead, 6mm (0.25in.) from package and center of die contact 3
Internal Source Inductance LS 7.5 nH Between lead, 6mm (0.25in.) from package and center of die contact 3
Input Capacitance Ciss 640 pF VGS=0V, VDS=25V, ƒ=1MHz 3
Output Capacitance Coss 160 pF VGS=0V, VDS=25V, ƒ=1MHz 3
Reverse Transfer Capacitance Crss 88 pF VGS=0V, VDS=25V, ƒ=1MHz 3
Continuous Source Current (Body Diode) IS 16 A 4
Pulsed Source Current (Body Diode) ISM 60 A 4
Diode Forward Voltage VSD 1.3 V TJ=25°C, IS=9A, VGS=0V 4
Reverse Recovery Time trr 130 190 ns TJ=25°C, IF=9A, dI/dt=100A/μs 4
Reverse Recovery Charge Qrr 650 970 nC TJ=25°C, IF=9A, dI/dt=100A/μs 4

CAD (KiCad official)

  • Symbol: IRFR3910TR
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: irfr3910tr-etched.step / irfr3910tr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irfr3910tr.step / irfr3910tr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (11 pp, sha256 8c7aac28b733d07e, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF