component
IRFR3910TR
Public Made by Adomby adom
UMW MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIRFR3910TR
UMW · MOSFETs · TO-252
IRFR3910TR from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-to-source voltage limited to ±20 V (VGS), with VGS(th) of 2 to 4 V. |
| 2 | D | passive | Drain; 100 V drain-to-source breakdown, 16 A continuous drain current at TC=25°C. |
| 3 | S | passive | Source; 16 A continuous body-diode source current and 60 A pulsed. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-252 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous Drain Current | ID | 16 | A | VGS=10V, TC=25°C | 1 | ||
| Continuous Drain Current | ID | 12 | A | VGS=10V, TC=100°C | 1 | ||
| Pulsed Drain Current | IDM | 60 | A | 1 | |||
| Power Dissipation | PD | 79 | W | TC=25°C | 1 | ||
| Linear Derating Factor | 0.53 | W/°C | 1 | ||||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Single Pulse Avalanche Energy | EAS | 150 | mJ | 1 | |||
| Avalanche Current | IAR | 9 | A | 1 | |||
| Repetitive Avalanche Energy | EAR | 7.9 | mJ | 1 | |||
| Peak Diode Recovery dv/dt | dv/dt | 5 | V/ns | 1 | |||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | 175 | °C | 1 | ||
| Soldering Temperature | 300 | °C | for 10 seconds, 1.6mm from case | 1 | |||
| Junction-to-Case Thermal Resistance | RθJC | 1.9 | °C/W | 2 | |||
| Junction-to-Ambient (PCB Mount) Thermal Resistance | RθJA | 50 | °C/W | PCB mount | 2 | ||
| Junction-to-Ambient Thermal Resistance | RθJA | 110 | °C/W | 2 | |||
| Drain-to-Source Breakdown Voltage | V(BR)DSS | 100 | V | ID=250µA, VGS=0V | 3 | ||
| Breakdown Voltage Temp. Coefficient | ΔV(BR)DSS/ΔTJ | 0.12 | V/°C | ID=1mA, Reference to 25°C | 3 | ||
| Static Drain-to-Source On-Resistance | RDS(ON) | 115 | mΩ | VGS=10V, ID=10A | 3 | ||
| Gate Threshold Voltage | VGS(th) | 2 | 4 | V | VDS=VGS, ID=250μA | 3 | |
| Forward Transconductance | gFS | 6.4 | S | VDS=50V, ID=9A | 3 | ||
| Drain-to-Source Leakage Current | IDSS | 25 | µA | VDS=100V, VGS=0V | 3 | ||
| Drain-to-Source Leakage Current | IDSS | 250 | µA | VDS=80V, VGS=0V, TJ=150°C | 3 | ||
| Gate-to-Source Forward Leakage | IGSS | 100 | nA | VGS=20V | 3 | ||
| Gate-to-Source Reverse Leakage | IGSS | -100 | nA | VGS=-20V | 3 | ||
| Total Gate Charge | Qg | 44 | nC | ID=9A, VDS=80V, VGS=10V | 3 | ||
| Gate-to-Source Charge | Qgs | 6.2 | nC | ID=9A, VDS=80V, VGS=10V | 3 | ||
| Gate-to-Drain (Miller) Charge | Qgd | 21 | nC | ID=9A, VDS=80V, VGS=10V | 3 | ||
| Turn-On Delay Time | tD(on) | 6.4 | ns | VDD=50V, ID=9A, RG=12Ω, RD=5.5Ω | 3 | ||
| Rise Time | tr | 27 | ns | VDD=50V, ID=9A, RG=12Ω, RD=5.5Ω | 3 | ||
| Turn-Off Delay Time | tD(off) | 37 | ns | VDD=50V, ID=9A, RG=12Ω, RD=5.5Ω | 3 | ||
| Fall Time | tf | 25 | ns | VDD=50V, ID=9A, RG=12Ω, RD=5.5Ω | 3 | ||
| Internal Drain Inductance | LD | 4.5 | nH | Between lead, 6mm (0.25in.) from package and center of die contact | 3 | ||
| Internal Source Inductance | LS | 7.5 | nH | Between lead, 6mm (0.25in.) from package and center of die contact | 3 | ||
| Input Capacitance | Ciss | 640 | pF | VGS=0V, VDS=25V, ƒ=1MHz | 3 | ||
| Output Capacitance | Coss | 160 | pF | VGS=0V, VDS=25V, ƒ=1MHz | 3 | ||
| Reverse Transfer Capacitance | Crss | 88 | pF | VGS=0V, VDS=25V, ƒ=1MHz | 3 | ||
| Continuous Source Current (Body Diode) | IS | 16 | A | 4 | |||
| Pulsed Source Current (Body Diode) | ISM | 60 | A | 4 | |||
| Diode Forward Voltage | VSD | 1.3 | V | TJ=25°C, IS=9A, VGS=0V | 4 | ||
| Reverse Recovery Time | trr | 130 | 190 | ns | TJ=25°C, IF=9A, dI/dt=100A/μs | 4 | |
| Reverse Recovery Charge | Qrr | 650 | 970 | nC | TJ=25°C, IF=9A, dI/dt=100A/μs | 4 |
CAD (KiCad official)
- Symbol:
IRFR3910TR - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
irfr3910tr-etched.step/irfr3910tr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irfr3910tr.step/irfr3910tr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (11 pp, sha256
8c7aac28b733d07e, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).