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IRFB4110PBF

Infineon Technologies · MOSFETs · TO-220

IRFB4110PBF from Infineon Technologies, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the HEXFET; gate-to-source voltage is rated ±20 V (VGS), and the gate threshold is 2.0 V to 4.0 V.
2 D passive Drain of the MOSFET, electrically connected to the metal mounting tab; rated VDSS 100 V with continuous drain current of 180 A (silicon limited) or 120 A (package limited) at TC = 25°C.
3 S passive Source of the MOSFET and reference for VGS; the body diode continuous source current is rated 170 A at TJ = 25°C.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-220
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Breakdown Voltage V(BR)DSS 100 V VGS = 0V, ID = 250µA 2
Static Drain-to-Source On-Resistance RDS(on) 3.7 4.5 mΩ VGS = 10V, ID = 75A 2
Gate Threshold Voltage VGS(th) 2 4 V VDS = VGS, ID = 250µA 2
Drain-to-Source Leakage Current IDSS 20 µA VDS = 100V, VGS = 0V 2
Drain-to-Source Leakage Current (TJ = 125°C) IDSS 250 µA VDS = 100V, VGS = 0V, TJ = 125°C 2
Gate-to-Source Forward Leakage IGSS 100 nA VGS = 20V 2
Gate-to-Source Reverse Leakage IGSS -100 nA VGS = -20V 2
Forward Transconductance gfs 160 S VDS = 50V, ID = 75A 2
Total Gate Charge Qg 150 210 nC 2
Continuous Source Current (Body Diode) IS 170 A MOSFET symbol showing the integral reverse p-n junction diode 2
Pulsed Source Current (Body Diode) ISM 670 A 2
Diode Forward Voltage VSD 1.3 V TJ = 25°C, IS = 75A, VGS = 0V 2
Reverse Recovery Time (TJ = 25°C) trr 50 75 ns TJ = 25°C, VR = 85V, IF = 75A 2
Reverse Recovery Time (TJ = 125°C) trr 60 90 ns TJ = 125°C, VR = 85V, IF = 75A 2
Reverse Recovery Charge (TJ = 25°C) Qrr 94 140 nC TJ = 25°C, di/dt = 100A/µs 2
Reverse Recovery Charge (TJ = 125°C) Qrr 140 210 nC TJ = 125°C, di/dt = 100A/µs 2
Continuous Drain Current, VGS @ 10V (Silicon Limited) at TC = 25°C ID 180 A VGS @ 10V (Silicon Limited), TC = 25°C 1
Continuous Drain Current, VGS @ 10V (Silicon Limited) at TC = 100°C ID 130 A VGS @ 10V (Silicon Limited), TC = 100°C 1
Continuous Drain Current, VGS @ 10V (Wire Bond Limited) at TC = 25°C ID 120 A VGS @ 10V (Wire Bond Limited), TC = 25°C 1
Pulsed Drain Current IDM 670 A 1
Maximum Power Dissipation PD 370 W TC = 25°C 1
Linear Derating Factor 2.5 W/°C 1
Gate-to-Source Voltage VGS -20 20 V 1
Peak Diode Recovery dv/dt 5.3 V/ns 1
Operating Junction Temperature TJ -55 175 °C 1
Storage Temperature Range TSTG -55 175 °C 1
Soldering Temperature 300 °C for 10 seconds (1.6mm from case) 1
Mounting Torque 10 lbin 6-32 or M3 screw 1
Single Pulse Avalanche Energy (thermally limited) EAS 190 mJ Thermally limited, single pulse 1
Junction-to-Case RθJC 0.402 °C/W 1
Case-to-Sink, Flat Greased Surface RθCS 0.5 °C/W Flat greased surface 1
Junction-to-Ambient RθJA 62 °C/W 1

CAD (KiCad official)

  • Symbol: IRFB4110PBF
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: irfb4110pbf-etched.step / irfb4110pbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irfb4110pbf.step / irfb4110pbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (9 pp, sha256 bb0efb1b0dd40f53, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF