component
IRFB4110PBF
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Infineon Technologies MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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IRFB4110PBF
Infineon Technologies · MOSFETs · TO-220
IRFB4110PBF from Infineon Technologies, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the HEXFET; gate-to-source voltage is rated ±20 V (VGS), and the gate threshold is 2.0 V to 4.0 V. |
| 2 | D | passive | Drain of the MOSFET, electrically connected to the metal mounting tab; rated VDSS 100 V with continuous drain current of 180 A (silicon limited) or 120 A (package limited) at TC = 25°C. |
| 3 | S | passive | Source of the MOSFET and reference for VGS; the body diode continuous source current is rated 170 A at TJ = 25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | V(BR)DSS | 100 | V | VGS = 0V, ID = 250µA | 2 | ||
| Static Drain-to-Source On-Resistance | RDS(on) | 3.7 | 4.5 | mΩ | VGS = 10V, ID = 75A | 2 | |
| Gate Threshold Voltage | VGS(th) | 2 | 4 | V | VDS = VGS, ID = 250µA | 2 | |
| Drain-to-Source Leakage Current | IDSS | 20 | µA | VDS = 100V, VGS = 0V | 2 | ||
| Drain-to-Source Leakage Current (TJ = 125°C) | IDSS | 250 | µA | VDS = 100V, VGS = 0V, TJ = 125°C | 2 | ||
| Gate-to-Source Forward Leakage | IGSS | 100 | nA | VGS = 20V | 2 | ||
| Gate-to-Source Reverse Leakage | IGSS | -100 | nA | VGS = -20V | 2 | ||
| Forward Transconductance | gfs | 160 | S | VDS = 50V, ID = 75A | 2 | ||
| Total Gate Charge | Qg | 150 | 210 | nC | 2 | ||
| Continuous Source Current (Body Diode) | IS | 170 | A | MOSFET symbol showing the integral reverse p-n junction diode | 2 | ||
| Pulsed Source Current (Body Diode) | ISM | 670 | A | 2 | |||
| Diode Forward Voltage | VSD | 1.3 | V | TJ = 25°C, IS = 75A, VGS = 0V | 2 | ||
| Reverse Recovery Time (TJ = 25°C) | trr | 50 | 75 | ns | TJ = 25°C, VR = 85V, IF = 75A | 2 | |
| Reverse Recovery Time (TJ = 125°C) | trr | 60 | 90 | ns | TJ = 125°C, VR = 85V, IF = 75A | 2 | |
| Reverse Recovery Charge (TJ = 25°C) | Qrr | 94 | 140 | nC | TJ = 25°C, di/dt = 100A/µs | 2 | |
| Reverse Recovery Charge (TJ = 125°C) | Qrr | 140 | 210 | nC | TJ = 125°C, di/dt = 100A/µs | 2 | |
| Continuous Drain Current, VGS @ 10V (Silicon Limited) at TC = 25°C | ID | 180 | A | VGS @ 10V (Silicon Limited), TC = 25°C | 1 | ||
| Continuous Drain Current, VGS @ 10V (Silicon Limited) at TC = 100°C | ID | 130 | A | VGS @ 10V (Silicon Limited), TC = 100°C | 1 | ||
| Continuous Drain Current, VGS @ 10V (Wire Bond Limited) at TC = 25°C | ID | 120 | A | VGS @ 10V (Wire Bond Limited), TC = 25°C | 1 | ||
| Pulsed Drain Current | IDM | 670 | A | 1 | |||
| Maximum Power Dissipation | PD | 370 | W | TC = 25°C | 1 | ||
| Linear Derating Factor | 2.5 | W/°C | 1 | ||||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Peak Diode Recovery | dv/dt | 5.3 | V/ns | 1 | |||
| Operating Junction Temperature | TJ | -55 | 175 | °C | 1 | ||
| Storage Temperature Range | TSTG | -55 | 175 | °C | 1 | ||
| Soldering Temperature | 300 | °C | for 10 seconds (1.6mm from case) | 1 | |||
| Mounting Torque | 10 | lbin | 6-32 or M3 screw | 1 | |||
| Single Pulse Avalanche Energy (thermally limited) | EAS | 190 | mJ | Thermally limited, single pulse | 1 | ||
| Junction-to-Case | RθJC | 0.402 | °C/W | 1 | |||
| Case-to-Sink, Flat Greased Surface | RθCS | 0.5 | °C/W | Flat greased surface | 1 | ||
| Junction-to-Ambient | RθJA | 62 | °C/W | 1 |
CAD (KiCad official)
- Symbol:
IRFB4110PBF - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
irfb4110pbf-etched.step/irfb4110pbf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irfb4110pbf.step/irfb4110pbf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (9 pp, sha256
bb0efb1b0dd40f53, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IRFB4110PBF
**Infineon Technologies** · MOSFETs · TO-220
IRFB4110PBF from Infineon Technologies, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the HEXFET; gate-to-source voltage is rated ±20 V (VGS), and the gate threshold is 2.0 V to 4.0 V. |
| 2 | D | passive | Drain of the MOSFET, electrically connected to the metal mounting tab; rated VDSS 100 V with continuous drain current of 180 A (silicon limited) or 120 A (package limited) at TC = 25°C. |
| 3 | S | passive | Source of the MOSFET and reference for VGS; the body diode continuous source current is rated 170 A at TJ = 25°C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | V(BR)DSS | 100 | | | V | VGS = 0V, ID = 250µA | 2 |
| Static Drain-to-Source On-Resistance | RDS(on) | | 3.7 | 4.5 | mΩ | VGS = 10V, ID = 75A | 2 |
| Gate Threshold Voltage | VGS(th) | 2 | | 4 | V | VDS = VGS, ID = 250µA | 2 |
| Drain-to-Source Leakage Current | IDSS | | | 20 | µA | VDS = 100V, VGS = 0V | 2 |
| Drain-to-Source Leakage Current (TJ = 125°C) | IDSS | | | 250 | µA | VDS = 100V, VGS = 0V, TJ = 125°C | 2 |
| Gate-to-Source Forward Leakage | IGSS | | | 100 | nA | VGS = 20V | 2 |
| Gate-to-Source Reverse Leakage | IGSS | | | -100 | nA | VGS = -20V | 2 |
| Forward Transconductance | gfs | 160 | | | S | VDS = 50V, ID = 75A | 2 |
| Total Gate Charge | Qg | | 150 | 210 | nC | | 2 |
| Continuous Source Current (Body Diode) | IS | | | 170 | A | MOSFET symbol showing the integral reverse p-n junction diode | 2 |
| Pulsed Source Current (Body Diode) | ISM | | | 670 | A | | 2 |
| Diode Forward Voltage | VSD | | | 1.3 | V | TJ = 25°C, IS = 75A, VGS = 0V | 2 |
| Reverse Recovery Time (TJ = 25°C) | trr | | 50 | 75 | ns | TJ = 25°C, VR = 85V, IF = 75A | 2 |
| Reverse Recovery Time (TJ = 125°C) | trr | | 60 | 90 | ns | TJ = 125°C, VR = 85V, IF = 75A | 2 |
| Reverse Recovery Charge (TJ = 25°C) | Qrr | | 94 | 140 | nC | TJ = 25°C, di/dt = 100A/µs | 2 |
| Reverse Recovery Charge (TJ = 125°C) | Qrr | | 140 | 210 | nC | TJ = 125°C, di/dt = 100A/µs | 2 |
| Continuous Drain Current, VGS @ 10V (Silicon Limited) at TC = 25°C | ID | | | 180 | A | VGS @ 10V (Silicon Limited), TC = 25°C | 1 |
| Continuous Drain Current, VGS @ 10V (Silicon Limited) at TC = 100°C | ID | | | 130 | A | VGS @ 10V (Silicon Limited), TC = 100°C | 1 |
| Continuous Drain Current, VGS @ 10V (Wire Bond Limited) at TC = 25°C | ID | | | 120 | A | VGS @ 10V (Wire Bond Limited), TC = 25°C | 1 |
| Pulsed Drain Current | IDM | | | 670 | A | | 1 |
| Maximum Power Dissipation | PD | | | 370 | W | TC = 25°C | 1 |
| Linear Derating Factor | | | | 2.5 | W/°C | | 1 |
| Gate-to-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Peak Diode Recovery | dv/dt | | | 5.3 | V/ns | | 1 |
| Operating Junction Temperature | TJ | -55 | | 175 | °C | | 1 |
| Storage Temperature Range | TSTG | -55 | | 175 | °C | | 1 |
| Soldering Temperature | | | | 300 | °C | for 10 seconds (1.6mm from case) | 1 |
| Mounting Torque | | | | 10 | lbin | 6-32 or M3 screw | 1 |
| Single Pulse Avalanche Energy (thermally limited) | EAS | | | 190 | mJ | Thermally limited, single pulse | 1 |
| Junction-to-Case | RθJC | | | 0.402 | °C/W | | 1 |
| Case-to-Sink, Flat Greased Surface | RθCS | | 0.5 | | °C/W | Flat greased surface | 1 |
| Junction-to-Ambient | RθJA | | | 62 | °C/W | | 1 |
## CAD (KiCad official)
- Symbol: `IRFB4110PBF`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `irfb4110pbf-etched.step` / `irfb4110pbf-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irfb4110pbf.step` / `irfb4110pbf.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Infineon Technologies datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588887122086805504) (9 pp, sha256 `bb0efb1b0dd40f53`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/irfb4110pbf-datasheet.pdf)