IRFB4110PBF

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  "title": "IRFB4110PBF",
  "brief": "Infineon Technologies MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
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    "package": "TO-220",
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    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
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      "digikey": "448-IRFB4110PBF-ND"
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      {
        "number": "1",
        "name": "G",
        "type": "input",
        "description": "Gate of the HEXFET; gate-to-source voltage is rated ±20 V (VGS), and the gate threshold is 2.0 V to 4.0 V."
      },
      {
        "number": "2",
        "name": "D",
        "type": "passive",
        "description": "Drain of the MOSFET, electrically connected to the metal mounting tab; rated VDSS 100 V with continuous drain current of 180 A (silicon limited) or 120 A (package limited) at TC = 25°C."
      },
      {
        "number": "3",
        "name": "S",
        "type": "passive",
        "description": "Source of the MOSFET and reference for VGS; the body diode continuous source current is rated 170 A at TJ = 25°C."
      }
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      "Manufacturer": "Infineon Technologies",
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