# IRFB3077PBF

**Infineon Technologies** · MOSFETs · TO-220AB

IRFB3077PBF from Infineon Technologies, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the HEXFET; gate-to-source voltage is rated ±20 V (VGS = ±20 V max). |
| 2 | D | passive | Drain terminal; rated 75 V drain-to-source (VDSS) and 210 A continuous drain current at TC = 25°C (silicon limited, VGS = 10 V), with 120 A package-limited. |
| 3 | S | passive | Source terminal; continuous body-diode source current is rated 210 A maximum (ISM 850 A pulsed). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-220AB |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | V(BR)DSS | 75 |  |  | V | VGS = 0V, ID = 250μA | 2 |
| Breakdown Voltage Temp. Coefficient | ΔV(BR)DSS/ΔTJ |  | 0.091 |  | V/°C | Reference to 25°C, ID = 5mA | 2 |
| Static Drain-to-Source On-Resistance | RDS(on) |  | 2.8 | 3.3 | mΩ | VGS = 10V, ID = 75A | 2 |
| Gate Threshold Voltage | VGS(th) | 2 |  | 4 | V | VDS = VGS, ID = 250μA | 2 |
| Drain-to-Source Leakage Current | IDSS |  |  | 20 | μA | VDS = 75V, VGS = 0V | 2 |
| Drain-to-Source Leakage Current | IDSS |  |  | 250 | μA | VDS = 75V, VGS = 0V, TJ = 125°C | 2 |
| Gate-to-Source Forward Leakage | IGSS |  |  | 100 | nA | VGS = 20V | 2 |
| Gate-to-Source Reverse Leakage | IGSS |  |  | -100 | nA | VGS = -20V | 2 |
| Gate Input Resistance | RG |  | 1.2 |  | Ω | f = 1MHz, open drain | 2 |
| Forward Transconductance | gfs | 160 |  |  | S | VDS = 50V, ID = 75A | 2 |
| Total Gate Charge | Qg |  | 160 | 220 | nC | VGS = 10V, VDS = 38V, ID = 75A | 2 |
| Continuous Source Current (Body Diode) | IS |  |  | 210 | A | TJ = 25°C, VGS = 0V (integral reverse p-n junction diode) | 2 |
| Pulsed Source Current (Body Diode) | ISM |  |  | 850 | A |  | 2 |
| Diode Forward Voltage | VSD |  |  | 1.3 | V | TJ = 25°C, IS = 75A, VGS = 0V | 2 |
| Reverse Recovery Time | trr |  | 42 | 63 | ns | TJ = 25°C, VR = 64V, IF = 75A | 2 |
| Reverse Recovery Time | trr |  | 50 | 75 | ns | TJ = 125°C, VR = 64V, IF = 75A | 2 |
| Reverse Recovery Charge | Qrr |  | 59 | 89 | nC | TJ = 25°C, di/dt = 100A/μs | 2 |
| Reverse Recovery Charge | Qrr |  | 86 | 130 | nC | TJ = 125°C, di/dt = 100A/μs | 2 |
| Continuous Drain Current, VGS @ 10V (Silicon Limited) | ID @ TC = 25°C |  |  | 210 | A | VGS @ 10V, silicon limited | 1 |
| Continuous Drain Current, VGS @ 10V (Silicon Limited) | ID @ TC = 100°C |  |  | 150 | A | VGS @ 10V, silicon limited | 1 |
| Continuous Drain Current, VGS @ 10V (Wire Bond Limited) | ID @ TC = 25°C |  |  | 120 | A | VGS @ 10V, wire bond limited | 1 |
| Pulsed Drain Current | IDM |  |  | 850 | A |  | 1 |
| Maximum Power Dissipation | PD @TC = 25°C |  |  | 370 | W | TC = 25°C | 1 |
| Linear Derating Factor |  |  |  | 2.5 | W/°C |  | 1 |
| Gate-to-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Peak Diode Recovery dV/dt | dV/dt |  |  | 2.5 | V/ns | ISD ≤ 75A, di/dt ≤ 400A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C | 2 |
| Operating Junction Temperature | TJ | -55 |  | 175 | °C |  | 1 |
| Storage Temperature Range | TSTG | -55 |  | 175 | °C |  | 1 |
| Soldering Temperature |  |  |  | 300 | °C | for 10 seconds (1.6mm from case) | 1 |
| Mounting Torque |  |  |  | 10 | lbin | 6-32 or M3 screw (1.1Nm) | 1 |
| Single Pulse Avalanche Energy (Thermally limited) | EAS |  |  | 200 | mJ | Starting TJ = 25°C, L = 0.028mH, RG = 25Ω, IAS = 120A, VGS = 10V | 1 |
| Avalanche Current | IAR |  |  | 120 | A |  | 1 |
| Junction-to-Case | RθJC |  |  | 0.402 | °C/W |  | 1 |
| Case-to-Sink, Flat Greased Surface | RθCS |  | 0.5 |  | °C/W |  | 1 |

## CAD (KiCad official)

- Symbol: `IRFB3077PBF`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files: `irfb3077pbf-etched.step` / `irfb3077pbf-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irfb3077pbf.step` / `irfb3077pbf.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Infineon Technologies datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588887122228465665) (8 pp, sha256 `0e11e02561b2b921`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/irfb3077pbf-datasheet.pdf)