component
IRFB3077PBF
Public Made by Adomby adom
Infineon Technologies MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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irfb3077pbf: specified limits as data (metadata.characteristics, 34 rows from the datasheet)
2 files changed
+457−1
README.md+41@@ -21,6 +21,47 @@ IRFB3077PBF from Infineon Technologies, in a TO-220AB. Pinout and pin descriptio | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-to-Source Breakdown Voltage | V(BR)DSS | 75 | | | V | VGS = 0V, ID = 250μA | 2 |+| Breakdown Voltage Temp. Coefficient | ΔV(BR)DSS/ΔTJ | | 0.091 | | V/°C | Reference to 25°C, ID = 5mA | 2 |+| Static Drain-to-Source On-Resistance | RDS(on) | | 2.8 | 3.3 | mΩ | VGS = 10V, ID = 75A | 2 |+| Gate Threshold Voltage | VGS(th) | 2 | | 4 | V | VDS = VGS, ID = 250μA | 2 |+| Drain-to-Source Leakage Current | IDSS | | | 20 | μA | VDS = 75V, VGS = 0V | 2 |+| Drain-to-Source Leakage Current | IDSS | | | 250 | μA | VDS = 75V, VGS = 0V, TJ = 125°C | 2 |+| Gate-to-Source Forward Leakage | IGSS | | | 100 | nA | VGS = 20V | 2 |+| Gate-to-Source Reverse Leakage | IGSS | | | -100 | nA | VGS = -20V | 2 |+| Gate Input Resistance | RG | | 1.2 | | Ω | f = 1MHz, open drain | 2 |+| Forward Transconductance | gfs | 160 | | | S | VDS = 50V, ID = 75A | 2 |+| Total Gate Charge | Qg | | 160 | 220 | nC | VGS = 10V, VDS = 38V, ID = 75A | 2 |+| Continuous Source Current (Body Diode) | IS | | | 210 | A | TJ = 25°C, VGS = 0V (integral reverse p-n junction diode) | 2 |+| Pulsed Source Current (Body Diode) | ISM | | | 850 | A | | 2 |+| Diode Forward Voltage | VSD | | | 1.3 | V | TJ = 25°C, IS = 75A, VGS = 0V | 2 |+| Reverse Recovery Time | trr | | 42 | 63 | ns | TJ = 25°C, VR = 64V, IF = 75A | 2 |+| Reverse Recovery Time | trr | | 50 | 75 | ns | TJ = 125°C, VR = 64V, IF = 75A | 2 |+| Reverse Recovery Charge | Qrr | | 59 | 89 | nC | TJ = 25°C, di/dt = 100A/μs | 2 |+| Reverse Recovery Charge | Qrr | | 86 | 130 | nC | TJ = 125°C, di/dt = 100A/μs | 2 |+| Continuous Drain Current, VGS @ 10V (Silicon Limited) | ID @ TC = 25°C | | | 210 | A | VGS @ 10V, silicon limited | 1 |+| Continuous Drain Current, VGS @ 10V (Silicon Limited) | ID @ TC = 100°C | | | 150 | A | VGS @ 10V, silicon limited | 1 |+| Continuous Drain Current, VGS @ 10V (Wire Bond Limited) | ID @ TC = 25°C | | | 120 | A | VGS @ 10V, wire bond limited | 1 |+| Pulsed Drain Current | IDM | | | 850 | A | | 1 |+| Maximum Power Dissipation | PD @TC = 25°C | | | 370 | W | TC = 25°C | 1 |+| Linear Derating Factor | | | | 2.5 | W/°C | | 1 |+| Gate-to-Source Voltage | VGS | -20 | | 20 | V | | 1 |+| Peak Diode Recovery dV/dt | dV/dt | | | 2.5 | V/ns | ISD ≤ 75A, di/dt ≤ 400A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C | 2 |+| Operating Junction Temperature | TJ | -55 | | 175 | °C | | 1 |+| Storage Temperature Range | TSTG | -55 | | 175 | °C | | 1 |+| Soldering Temperature | | | | 300 | °C | for 10 seconds (1.6mm from case) | 1 |+| Mounting Torque | | | | 10 | lbin | 6-32 or M3 screw (1.1Nm) | 1 |+| Single Pulse Avalanche Energy (Thermally limited) | EAS | | | 200 | mJ | Starting TJ = 25°C, L = 0.028mH, RG = 25Ω, IAS = 120A, VGS = 10V | 1 |+| Avalanche Current | IAR | | | 120 | A | | 1 |+| Junction-to-Case | RθJC | | | 0.402 | °C/W | | 1 |+| Case-to-Sink, Flat Greased Surface | RθCS | | 0.5 | | °C/W | | 1 |+ ## CAD (KiCad official) - Symbol: `IRFB3077PBF`
page.json+416−1@@ -150,6 +150,421 @@ "Package": "TO-220AB", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "0e11e02561b2b921",+ "rows": [+ {+ "name": "Drain-to-Source Breakdown Voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": 75,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0V, ID = 250μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Breakdown Voltage Temp. Coefficient",+ "symbol": "ΔV(BR)DSS/ΔTJ",+ "kind": "temperature_coefficient",+ "unit": "V/°C",+ "min": null,+ "typ": 0.091,+ "max": null,+ "conditions": "Reference to 25°C, ID = 5mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-to-Source On-Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 2.8,+ "max": 3.3,+ "conditions": "VGS = 10V, ID = 75A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 2,+ "typ": null,+ "max": 4,+ "conditions": "VDS = VGS, ID = 250μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-to-Source Leakage Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 20,+ "conditions": "VDS = 75V, VGS = 0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-to-Source Leakage Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 250,+ "conditions": "VDS = 75V, VGS = 0V, TJ = 125°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-to-Source Forward Leakage",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VGS = 20V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-to-Source Reverse Leakage",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": -100,+ "conditions": "VGS = -20V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Input Resistance",+ "symbol": "RG",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 1.2,+ "max": null,+ "conditions": "f = 1MHz, open drain",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Forward Transconductance",+ "symbol": "gfs",+ "kind": "electrical",+ "unit": "S",+ "min": 160,+ "typ": null,+ "max": null,+ "conditions": "VDS = 50V, ID = 75A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 160,+ "max": 220,+ "conditions": "VGS = 10V, VDS = 38V, ID = 75A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Continuous Source Current (Body Diode)",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 210,+ "conditions": "TJ = 25°C, VGS = 0V (integral reverse p-n junction diode)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Source Current (Body Diode)",+ "symbol": "ISM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 850,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1.3,+ "conditions": "TJ = 25°C, IS = 75A, VGS = 0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Recovery Time",+ "symbol": "trr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 42,+ "max": 63,+ "conditions": "TJ = 25°C, VR = 64V, IF = 75A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Recovery Time",+ "symbol": "trr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 50,+ "max": 75,+ "conditions": "TJ = 125°C, VR = 64V, IF = 75A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Recovery Charge",+ "symbol": "Qrr",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 59,+ "max": 89,+ "conditions": "TJ = 25°C, di/dt = 100A/μs",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Recovery Charge",+ "symbol": "Qrr",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 86,+ "max": 130,+ "conditions": "TJ = 125°C, di/dt = 100A/μs",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current, VGS @ 10V (Silicon Limited)",+ "symbol": "ID @ TC = 25°C",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 210,+ "conditions": "VGS @ 10V, silicon limited",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current, VGS @ 10V (Silicon Limited)",+ "symbol": "ID @ TC = 100°C",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 150,+ "conditions": "VGS @ 10V, silicon limited",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current, VGS @ 10V (Wire Bond Limited)",+ "symbol": "ID @ TC = 25°C",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 120,+ "conditions": "VGS @ 10V, wire bond limited",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 850,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD @TC = 25°C",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 370,+ "conditions": "TC = 25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Linear Derating Factor",+ "symbol": "",+ "kind": "absolute_maximum",+ "unit": "W/°C",+ "min": null,+ "typ": null,+ "max": 2.5,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-to-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Peak Diode Recovery dV/dt",+ "symbol": "dV/dt",+ "kind": "absolute_maximum",+ "unit": "V/ns",+ "min": null,+ "typ": null,+ "max": 2.5,+ "conditions": "ISD ≤ 75A, di/dt ≤ 400A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction Temperature",+ "symbol": "TJ",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 175,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Storage Temperature Range",+ "symbol": "TSTG",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 175,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Soldering Temperature",+ "symbol": "",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": null,+ "typ": null,+ "max": 300,+ "conditions": "for 10 seconds (1.6mm from case)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Mounting Torque",+ "symbol": "",+ "kind": "absolute_maximum",+ "unit": "lbin",+ "min": null,+ "typ": null,+ "max": 10,+ "conditions": "6-32 or M3 screw (1.1Nm)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Single Pulse Avalanche Energy (Thermally limited)",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 200,+ "conditions": "Starting TJ = 25°C, L = 0.028mH, RG = 25Ω, IAS = 120A, VGS = 10V",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Avalanche Current",+ "symbol": "IAR",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 120,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-Case",+ "symbol": "RθJC",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 0.402,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Case-to-Sink, Flat Greased Surface",+ "symbol": "RθCS",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 0.5,+ "max": null,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -191,4 +606,4 @@ "visibility": { "public": true }-}+}