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IRFB3077PBF

Public Made by Adom

by adom

Infineon Technologies MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Generated by kicad-footprint-generator · KiCad file format 20260206
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docs Publish 0.1.0 · Ray 29d ago
viewers irfb3077pbf: viewers · Ray 29d ago
irfb3077pbf-etched.glb irfb3077pbf: factory component page (tier=lcsc) · Ray 29d ago
irfb3077pbf-etched.step irfb3077pbf: factory component page (tier=lcsc) · Ray 29d ago
irfb3077pbf-hero.glb irfb3077pbf: hero GLB from the etched model (keeps the MPN mark) · Ray 29d ago
irfb3077pbf-hero.overlay.json Publish 0.1.0 · Ray 29d ago
irfb3077pbf.glb Publish 0.1.0 · Ray 29d ago
irfb3077pbf.kicad_mod Publish 0.1.0 · Ray 29d ago
irfb3077pbf.kicad_sym Publish 0.1.0 · Ray 29d ago
irfb3077pbf.lbr Publish 0.1.0 · Ray 29d ago
irfb3077pbf.step Publish 0.1.0 · Ray 29d ago
package.json Publish 0.1.0 · Ray 29d ago
page.json irfb3077pbf: specified limits as data (metadata.characteristics, 34 rows from the datasheet) · Ray 24d ago
README.md irfb3077pbf: specified limits as data (metadata.characteristics, 34 rows from the datasheet) · Ray 24d ago

IRFB3077PBF

Infineon Technologies · MOSFETs · TO-220AB

IRFB3077PBF from Infineon Technologies, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the HEXFET; gate-to-source voltage is rated ±20 V (VGS = ±20 V max).
2 D passive Drain terminal; rated 75 V drain-to-source (VDSS) and 210 A continuous drain current at TC = 25°C (silicon limited, VGS = 10 V), with 120 A package-limited.
3 S passive Source terminal; continuous body-diode source current is rated 210 A maximum (ISM 850 A pulsed).

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-220AB
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Breakdown Voltage V(BR)DSS 75 V VGS = 0V, ID = 250μA 2
Breakdown Voltage Temp. Coefficient ΔV(BR)DSS/ΔTJ 0.091 V/°C Reference to 25°C, ID = 5mA 2
Static Drain-to-Source On-Resistance RDS(on) 2.8 3.3 mΩ VGS = 10V, ID = 75A 2
Gate Threshold Voltage VGS(th) 2 4 V VDS = VGS, ID = 250μA 2
Drain-to-Source Leakage Current IDSS 20 μA VDS = 75V, VGS = 0V 2
Drain-to-Source Leakage Current IDSS 250 μA VDS = 75V, VGS = 0V, TJ = 125°C 2
Gate-to-Source Forward Leakage IGSS 100 nA VGS = 20V 2
Gate-to-Source Reverse Leakage IGSS -100 nA VGS = -20V 2
Gate Input Resistance RG 1.2 Ω f = 1MHz, open drain 2
Forward Transconductance gfs 160 S VDS = 50V, ID = 75A 2
Total Gate Charge Qg 160 220 nC VGS = 10V, VDS = 38V, ID = 75A 2
Continuous Source Current (Body Diode) IS 210 A TJ = 25°C, VGS = 0V (integral reverse p-n junction diode) 2
Pulsed Source Current (Body Diode) ISM 850 A 2
Diode Forward Voltage VSD 1.3 V TJ = 25°C, IS = 75A, VGS = 0V 2
Reverse Recovery Time trr 42 63 ns TJ = 25°C, VR = 64V, IF = 75A 2
Reverse Recovery Time trr 50 75 ns TJ = 125°C, VR = 64V, IF = 75A 2
Reverse Recovery Charge Qrr 59 89 nC TJ = 25°C, di/dt = 100A/μs 2
Reverse Recovery Charge Qrr 86 130 nC TJ = 125°C, di/dt = 100A/μs 2
Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 25°C 210 A VGS @ 10V, silicon limited 1
Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C 150 A VGS @ 10V, silicon limited 1
Continuous Drain Current, VGS @ 10V (Wire Bond Limited) ID @ TC = 25°C 120 A VGS @ 10V, wire bond limited 1
Pulsed Drain Current IDM 850 A 1
Maximum Power Dissipation PD @TC = 25°C 370 W TC = 25°C 1
Linear Derating Factor 2.5 W/°C 1
Gate-to-Source Voltage VGS -20 20 V 1
Peak Diode Recovery dV/dt dV/dt 2.5 V/ns ISD ≤ 75A, di/dt ≤ 400A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C 2
Operating Junction Temperature TJ -55 175 °C 1
Storage Temperature Range TSTG -55 175 °C 1
Soldering Temperature 300 °C for 10 seconds (1.6mm from case) 1
Mounting Torque 10 lbin 6-32 or M3 screw (1.1Nm) 1
Single Pulse Avalanche Energy (Thermally limited) EAS 200 mJ Starting TJ = 25°C, L = 0.028mH, RG = 25Ω, IAS = 120A, VGS = 10V 1
Avalanche Current IAR 120 A 1
Junction-to-Case RθJC 0.402 °C/W 1
Case-to-Sink, Flat Greased Surface RθCS 0.5 °C/W 1

CAD (KiCad official)

  • Symbol: IRFB3077PBF
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: irfb3077pbf-etched.step / irfb3077pbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irfb3077pbf.step / irfb3077pbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (8 pp, sha256 0e11e02561b2b921, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF