# IMW120R060M1H

**Infineon Technologies** · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247-3

IMW120R060M1H from Infineon Technologies, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate control input terminal with recommended on-voltage of 18V and off-voltage of 0V; maximum transient VGS range is -7V to +23V. |
| 2 | Drain | passive | Drain terminal with maximum rated VDS of 1200V, maximum ID of 36A at TC=25°C, and RDS(on)=60mΩ at VGS=18V and ID=13A. |
| 3 | Source | power_in | Source terminal; gate voltage reference and drain current return path rated for 36A maximum DC current at TC=25°C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-247-3 |
| Category | Silicon Carbide (SiC) Devices |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDSS |  |  | 1200 | V | Tvj ≥ 25°C | 3 |
| DC drain current | ID |  |  | 36 | A | for Rth(j-c,max), limited by Tvjmax, VGS = 18V, TC = 25°C | 3 |
| DC drain current | ID |  |  | 26 | A | for Rth(j-c,max), limited by Tvjmax, VGS = 18V, TC = 100°C | 3 |
| Pulsed drain current | ID,pulse |  |  | 76 | A | tp limited by Tvjmax, VGS = 18V | 3 |
| DC body diode forward current | ISD |  |  | 36 | A | for Rth(j-c,max), limited by Tvjmax, VGS = 0V, TC = 25°C | 3 |
| DC body diode forward current | ISD |  |  | 22 | A | for Rth(j-c,max), limited by Tvjmax, VGS = 0V, TC = 100°C | 3 |
| Pulsed body diode current | ISD,pulse |  |  | 76 | A | tp limited by Tvjmax | 3 |
| Gate-source voltage (max transient) | VGS | -7 |  | 23 | V | Max transient voltage, < 1% duty cycle | 3 |
| Recommended turn-on gate voltage | VGS,on | 15 |  | 18 | V |  | 3 |
| Recommended turn-off gate voltage | VGS,off |  | 0 |  | V |  | 3 |
| Short-circuit withstand time | tSC |  |  | 3 | µs | VDD = 800V, VDS,peak < 1200V, VGS,on = 15V, Tj,start = 25°C | 3 |
| Power dissipation | Ptot |  |  | 150 | W | limited by Tvjmax, TC = 25°C | 3 |
| Power dissipation | Ptot |  |  | 75 | W | limited by Tvjmax, TC = 100°C | 3 |
| Virtual junction temperature | Tvj | -55 |  | 175 | °C |  | 3 |
| Storage temperature | Tstg | -55 |  | 150 | °C |  | 3 |
| Soldering temperature | Tsold |  |  | 260 | °C | wave soldering only at leads, 1.6mm (0.063 in.) from case for 10 s | 3 |
| Mounting torque, M3 screw | M |  |  | 0.6 | Nm | maximum of mounting processes: 3 | 3 |
| MOSFET/body diode thermal resistance, junction–case | Rth(j-c) |  | 0.8 | 1 | K/W |  | 4 |
| Thermal resistance, junction–ambient, leaded | Rth(j-a) |  |  | 62 | K/W |  | 4 |
| Drain-source on-state resistance | RDS(on) |  | 60 | 83 | mΩ | VGS = 18V, ID = 13A, Tvj = 25°C | 5 |
| Drain-source on-state resistance | RDS(on) |  | 76 |  | mΩ | VGS = 18V, ID = 13A, Tvj = 100°C | 5 |
| Drain-source on-state resistance | RDS(on) |  | 113 |  | mΩ | VGS = 18V, ID = 13A, Tvj = 175°C | 5 |
| Drain-source on-state resistance | RDS(on) |  | 80 | 106 | mΩ | VGS = 15V, ID = 13A, Tvj = 25°C | 5 |
| Body diode forward voltage | VSD |  | 4.1 | 5.2 | V | VGS = 0V, ISD = 13A, Tvj = 25°C | 5 |
| Body diode forward voltage | VSD |  | 4 |  | V | VGS = 0V, ISD = 13A, Tvj = 100°C | 5 |
| Body diode forward voltage | VSD |  | 3.9 |  | V | VGS = 0V, ISD = 13A, Tvj = 175°C | 5 |
| Gate-source threshold voltage | VGS(th) | 3.5 |  | 4.5 | V | tested after 1 ms pulse at VGS = 20V, ID = 5.6mA, VDS = VGS, Tvj = 25°C | 5 |
| Gate-source threshold voltage | VGS(th) | 3.6 |  | 5.7 | V | tested after 1 ms pulse at VGS = 20V, ID = 5.6mA, VDS = VGS, Tvj = 175°C | 5 |
| Zero gate voltage drain current | IDSS |  | 0.6 | 180 | µA | VGS = 0V, VDS = 1200V, Tvj = 25°C | 5 |
| Zero gate voltage drain current | IDSS |  | 1.9 |  | µA | VGS = 0V, VDS = 1200V, Tvj = 175°C | 5 |
| Gate-source leakage current | IGSS |  |  | 100 | nA | VGS = 23V, VDS = 0V | 5 |
| Gate-source leakage current | IGSS | -100 |  |  | nA | VGS = -7V, VDS = 0V | 5 |
| Transconductance | gfs |  | 7 |  | S | VDS = 20V, ID = 13A | 5 |
| Internal gate resistance | RG,int |  | 6 |  | Ω | f = 1MHz, VAC = 25mV | 5 |
| Input capacitance | Ciss |  | 1060 |  | pF | VDD = 800V, VGS = 0V, f = 1MHz, VAC = 25mV | 6 |
| Output capacitance | Coss |  | 58 |  | pF |  | 6 |
| Reverse capacitance | Crss |  | 6.5 |  | pF |  | 6 |
| Coss stored energy | Eoss |  | 22 |  | µJ |  | 6 |
| Total gate charge | QG |  | 31 |  | nC | VDD = 800V, ID = 13A, VGS = 0/18V, turn-on pulse | 6 |
| Gate to source charge | QGS,pl |  | 9 |  | nC |  | 6 |
| Gate to drain charge | QGD |  | 7 |  | nC |  | 6 |
| Turn-on delay time | td(on) |  | 5.7 |  | ns | Tvj = 25°C; VDD = 800V, ID = 13A, VGS = 0/18V, RG,ext = 2Ω, Lσ = 40nH, diode: body diode at VGS = 0V | 7 |
| Rise time | tr |  | 7 |  | ns | Tvj = 25°C | 7 |
| Turn-off delay time | td(off) |  | 13 |  | ns | Tvj = 25°C | 7 |
| Fall time | tf |  | 12 |  | ns | Tvj = 25°C | 7 |
| Turn-on energy | Eon |  | 181 |  | µJ | Tvj = 25°C | 7 |
| Turn-off energy | Eoff |  | 31 |  | µJ | Tvj = 25°C | 7 |
| Total switching energy | Etot |  | 212 |  | µJ | Tvj = 25°C | 7 |
| Diode reverse recovery charge | Qrr |  | 180 |  | nC | Tvj = 25°C; VDD = 800V, ISD = 13A, VGS at diode = 0V, dif/dt = 1000A/µs | 7 |
| Diode peak reverse recovery current | Irrm |  | 5 |  | A | Tvj = 25°C | 7 |
| Rise time | tr |  | 17 |  | ns | Tvj = 175°C | 7 |
| Turn-on energy | Eon |  | 241 |  | µJ | Tvj = 175°C | 7 |
| Turn-off energy | Eoff |  | 33 |  | µJ | Tvj = 175°C | 7 |
| Total switching energy | Etot |  | 274 |  | µJ | Tvj = 175°C | 7 |
| Diode reverse recovery charge | Qrr |  | 225 |  | nC | Tvj = 175°C; VDD = 800V, ISD = 13A, VGS at diode = 0V, dif/dt = 1000A/µs | 7 |
| Diode peak reverse recovery current | Irrm |  | 7 |  | A | Tvj = 175°C | 7 |

## CAD (KiCad official)

- Symbol: `IMW120R060M1H`
- Footprint: `Package_TO_SOT_THT:TO-247-3_Vertical`
- 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files: `imw120r060m1h-etched.step` / `imw120r060m1h-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `imw120r060m1h.step` / `imw120r060m1h.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Infineon Technologies datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588897128319606784) (17 pp, sha256 `ddb1352a32555ca0`, retrieved 2026-09-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.2`, primary `claude-haiku-4-5-20251001` (text), consensus `claude-sonnet-4-6` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/imw120r060m1h-datasheet.pdf)